Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions

Q. W. Ren*, L. K. Nanver, C. C.G. Visser, J. W. Slotboom

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)


Ultra-shallow diodes have been fabricated by epitaxially growing thin layers of highly doped Si or strained SiGe on silicon substrate wafers and contacting with Al/1%Si. Ideal diode I-V characteristics were achieved for both n+p and p+n junctions as shallow as 20 nm. The formation of silicon precipitates on the contact surface as a result of alloying after metallization was found to be impeded by increasing the Ge content of the epitaxially grown layer. For a concentration of 27%, no precipitates were observed.

Original languageEnglish
Pages (from-to)313-316
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Issue number4-6
Publication statusPublished - 1 Apr 2001
Externally publishedYes


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