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AL2O3 and Y2O3 Thin Films for Active Integrated Optical Waveguide Devices

  • J. Bradley
  • , F. Ay
  • , Kerstin Worhoff
  • , Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

    156 Downloads (Pure)

    Abstract

    $Al_{2}O_{3}$ and $Y_{2}O_{3}$ are both very promising host materials for active integrated optics applications such as rare-earth ion doped waveguide lasers. In this paper, a reactive co-sputtering process for stable, target condition-independent deposition of $Al_{2}O_{3}$ layers with high optical quality is discussed. The loss of as-deposited $Al_{2}O_{3}$ waveguides in the near infrared wavelength range was 0.3 dB/cm. Reactive ion etching of both $Al_{3}O_{2}$ and $Y_{2}O_{3}$ thin films for defining channel waveguide structures was investigated and compared using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $CL_{2}$ inductively coupled plasmas.
    Original languageUndefined
    Title of host publication11th Annual Symposium IEEE/LEOS Benelux
    EditorsA.M.J. Koonen, X.J.M. Leijtens, H.P.A. van den Boom, E.J.M. Verdurmen, J. Molina Vazquez
    Place of PublicationEindhoven
    PublisherIEEE
    Pages113-116
    Number of pages4
    ISBN (Print)978-90-6144-989-8
    Publication statusPublished - 30 Nov 2006
    Event11th Annual Symposium IEEE/LEOS Benelux Chapter 2006 - Eindhoven, The Netherlands, Eindhoven, Netherlands
    Duration: 30 Nov 2006 → 1 Dec 2006
    Conference number: 11

    Publication series

    Name
    PublisherIEEE LEOS Benelux Chapter
    Number06CH37725

    Conference

    Conference11th Annual Symposium IEEE/LEOS Benelux Chapter 2006
    Country/TerritoryNetherlands
    CityEindhoven
    Period30/11/06 → 1/12/06

    Keywords

    • IOMS-APD: Advanced Photonic Devices
    • METIS-237728
    • EWI-8442
    • IR-66701

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