Al2O3:Er3+ as a broad gain medium for 1.53-µm integrated optical applications

J. Bradley, Remco Stoffer, L. Agazzi, F. Ay, Kerstin Worhoff, Markus Pollnau

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    Novel on-chip devices, suitable for integrated optical applications around 1.53 µm, have been realized by applying Al2O3:Er3+ as a broad gain medium. A zero-loss optical power splitter operating over the entire C-band (1525-1565 nm) and requiring <50 mW of 977 nm pump power has been demonstrated. Peak net gain of up to 11 dB at 1532 nm and signal transmission at 170 Gbit/s without added bit-error penalty have been measured in an Al2O3:Er3+ amplifier. Finally, the first integrated Al2O3:Er3+ ring laser has been realized. Laser emission was demonstrated over the wavelength range 1530-1557 nm by tuning the output coupler length.
    Original languageUndefined
    Title of host publicationProceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter
    EditorsStefano Beri, Philipp Tassin, Gordon Craggs, Xaveer Leijtens, Jan Dankaert
    PublisherVUBPress Brussels University Press
    Number of pages4
    ISBN (Print)978-90-5487-650-2
    Publication statusPublished - 5 Nov 2009
    Event14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 - Brussels, Belgium
    Duration: 5 Nov 20096 Nov 2009
    Conference number: 14

    Publication series

    PublisherVUBPress Brussels University Press


    Conference14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009


    • IR-69939
    • METIS-265790
    • Aluminum oxide
    • optical gain
    • IOMS-APD: Active Photonic Devices
    • amplifier
    • EWI-17429
    • EC Grant Agreement nr.: FP6/017501
    • Erbium

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