Abstract
Novel on-chip devices, suitable for integrated optical applications around 1.53 µm, have been realized by applying Al2O3:Er3+ as a broad gain medium. A zero-loss optical power splitter operating over the entire C-band (1525-1565 nm) and requiring <50 mW of 977 nm pump power has been demonstrated. Peak net gain of up to 11 dB at 1532 nm and signal transmission at 170 Gbit/s without added bit-error penalty have been measured in an Al2O3:Er3+ amplifier. Finally, the first integrated Al2O3:Er3+ ring laser has been realized. Laser emission was demonstrated over the wavelength range 1530-1557 nm by tuning the output coupler length.
Original language | Undefined |
---|---|
Title of host publication | Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter |
Editors | Stefano Beri, Philipp Tassin, Gordon Craggs, Xaveer Leijtens, Jan Dankaert |
Publisher | VUBPress Brussels University Press |
Pages | 13-16 |
Number of pages | 4 |
ISBN (Print) | 978-90-5487-650-2 |
Publication status | Published - 5 Nov 2009 |
Event | 14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 - Brussels, Belgium Duration: 5 Nov 2009 → 6 Nov 2009 Conference number: 14 |
Publication series
Name | |
---|---|
Publisher | VUBPress Brussels University Press |
Conference
Conference | 14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 |
---|---|
Country/Territory | Belgium |
City | Brussels |
Period | 5/11/09 → 6/11/09 |
Keywords
- IR-69939
- METIS-265790
- Aluminum oxide
- optical gain
- IOMS-APD: Active Photonic Devices
- amplifier
- EWI-17429
- EC Grant Agreement nr.: FP6/017501
- Erbium