Al2O3:Er3+ as a new platform for active integrated optics

Markus Pollnau; J. Bradley; L. Agazzi; Edward Bernhardi; F. Ay; Kerstin Worhoff; R.M. de Ridder

doi:10.1109/ICTON.2009.5185260

Al₂O₃:Er³⁺ as a new platform for active integrated optics

Markus Pollnau, J. Bradley, L. Agazzi, Edward Bernhardi, F. Ay, Kerstin Worhoff, R.M. de Ridder

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation

Original language	Undefined
Title of host publication	11th International Conference on Transparent Optical Networks, ICTON '09
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	We.D2.1
Number of pages	4
ISBN (Print)	978-1-4244-4825-8
DOIs	https://doi.org/10.1109/ICTON.2009.5185260
Publication status	Published - 31 Jul 2009
Event	11th International Conference on Transparent Optical Networks, ICTON 2009 - University of Azores, Azores, Portugal Duration: 28 Jun 2009 → 2 Jul 2009 Conference number: 11

Publication series

Name
Publisher	IEEE

Conference

Conference	11th International Conference on Transparent Optical Networks, ICTON 2009
Abbreviated title	ICTON
Country/Territory	Portugal
City	Azores
Period	28/06/09 → 2/07/09

Keywords

METIS-265792
IR-69955
IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
EC Grant Agreement nr.: FP6/017501
IOMS-APD: Active Photonic Devices
EWI-17444

Access to Document

10.1109/ICTON.2009.5185260

Cite this

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title = "Al2O3:Er3+ as a new platform for active integrated optics",

abstract = "Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation",

keywords = "METIS-265792, IR-69955, IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES, EC Grant Agreement nr.: FP6/017501, IOMS-APD: Active Photonic Devices, EWI-17444",

author = "Markus Pollnau and J. Bradley and L. Agazzi and Edward Bernhardi and F. Ay and Kerstin Worhoff and {de Ridder}, R.M.",

note = "10.1109/ICTON.2009.5185260 ; 11th International Conference on Transparent Optical Networks, ICTON 2009 ; Conference date: 28-06-2009 Through 02-07-2009",

year = "2009",

month = jul,

day = "31",

doi = "10.1109/ICTON.2009.5185260",

language = "Undefined",

isbn = "978-1-4244-4825-8",

publisher = "IEEE",

pages = "We.D2.1",

booktitle = "11th International Conference on Transparent Optical Networks, ICTON '09",

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Pollnau, M, Bradley, J, Agazzi, L, Bernhardi, E, Ay, F, Worhoff, K & de Ridder, RM 2009, Al₂O₃:Er³⁺ as a new platform for active integrated optics. in 11th International Conference on Transparent Optical Networks, ICTON '09., 10.1109/ICTON.2009.5185260, IEEE, Piscataway, NJ, USA, pp. We.D2.1, 11th International Conference on Transparent Optical Networks, ICTON 2009, Azores, Portugal, 28/06/09. https://doi.org/10.1109/ICTON.2009.5185260

Al₂O₃:Er³⁺ as a new platform for active integrated optics. / Pollnau, Markus; Bradley, J.; Agazzi, L. et al.
11th International Conference on Transparent Optical Networks, ICTON '09. Piscataway, NJ, USA: IEEE, 2009. p. We.D2.1 10.1109/ICTON.2009.5185260.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Bernhardi, Edward

AU - Ay, F.

AU - Worhoff, Kerstin

AU - de Ridder, R.M.

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AB - Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation

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