Al2O3:Er3+ as a new platform for active integrated optics

Markus Pollnau, J. Bradley, L. Agazzi, Edward Bernhardi, F. Ay, Kerstin Worhoff, R.M. de Ridder

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    Abstract

    Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation
    Original languageUndefined
    Title of host publication11th International Conference on Transparent Optical Networks, ICTON '09
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    PagesWe.D2.1
    Number of pages4
    ISBN (Print)978-1-4244-4825-8
    DOIs
    Publication statusPublished - 31 Jul 2009
    Event11th International Conference on Transparent Optical Networks, ICTON 2009 - University of Azores, Azores, Portugal
    Duration: 28 Jun 20092 Jul 2009
    Conference number: 11

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference11th International Conference on Transparent Optical Networks, ICTON 2009
    Abbreviated titleICTON
    CountryPortugal
    CityAzores
    Period28/06/092/07/09

    Keywords

    • METIS-265792
    • IR-69955
    • IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
    • EC Grant Agreement nr.: FP6/017501
    • IOMS-APD: Active Photonic Devices
    • EWI-17444

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