Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response

S. Chen, Johan G. Bomer, Edwin Carlen, Albert van den Berg

    Research output: Contribution to journalArticleAcademicpeer-review

    100 Citations (Scopus)

    Abstract

    Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.
    Original languageUndefined
    Pages (from-to)2334-2341
    Number of pages8
    JournalNano letters
    Volume11
    Issue number6
    DOIs
    Publication statusPublished - Jun 2011

    Keywords

    • EWI-20330
    • IR-77674
    • METIS-277716

    Cite this

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    title = "Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response",
    abstract = "Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.",
    keywords = "EWI-20330, IR-77674, METIS-277716",
    author = "S. Chen and Bomer, {Johan G.} and Edwin Carlen and {van den Berg}, Albert",
    note = "eemcs-eprint-20330",
    year = "2011",
    month = "6",
    doi = "10.1021/nl200623n",
    language = "Undefined",
    volume = "11",
    pages = "2334--2341",
    journal = "Nano letters",
    issn = "1530-6984",
    publisher = "American Chemical Society",
    number = "6",

    }

    Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response. / Chen, S.; Bomer, Johan G.; Carlen, Edwin; van den Berg, Albert.

    In: Nano letters, Vol. 11, No. 6, 06.2011, p. 2334-2341.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response

    AU - Chen, S.

    AU - Bomer, Johan G.

    AU - Carlen, Edwin

    AU - van den Berg, Albert

    N1 - eemcs-eprint-20330

    PY - 2011/6

    Y1 - 2011/6

    N2 - Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.

    AB - Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.

    KW - EWI-20330

    KW - IR-77674

    KW - METIS-277716

    U2 - 10.1021/nl200623n

    DO - 10.1021/nl200623n

    M3 - Article

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    SP - 2334

    EP - 2341

    JO - Nano letters

    JF - Nano letters

    SN - 1530-6984

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    ER -