Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response

S. Chen, Johan G. Bomer, Edwin Carlen, Albert van den Berg

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.
Original languageUndefined
Pages (from-to)2334-2341
Number of pages8
JournalNano letters
Volume11
Issue number6
DOIs
Publication statusPublished - Jun 2011

Keywords

  • EWI-20330
  • IR-77674
  • METIS-277716

Cite this

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title = "Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response",
abstract = "Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.",
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author = "S. Chen and Bomer, {Johan G.} and Edwin Carlen and {van den Berg}, Albert",
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year = "2011",
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doi = "10.1021/nl200623n",
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volume = "11",
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journal = "Nano letters",
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Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response. / Chen, S.; Bomer, Johan G.; Carlen, Edwin; van den Berg, Albert.

In: Nano letters, Vol. 11, No. 6, 06.2011, p. 2334-2341.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response

AU - Chen, S.

AU - Bomer, Johan G.

AU - Carlen, Edwin

AU - van den Berg, Albert

N1 - eemcs-eprint-20330

PY - 2011/6

Y1 - 2011/6

N2 - Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.

AB - Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.

KW - EWI-20330

KW - IR-77674

KW - METIS-277716

U2 - 10.1021/nl200623n

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JO - Nano letters

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SN - 1530-6984

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