Abstract
| Original language | Undefined |
|---|---|
| Pages (from-to) | 2334-2341 |
| Number of pages | 8 |
| Journal | Nano letters |
| Volume | 11 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 2011 |
Keywords
- EWI-20330
- IR-77674
- METIS-277716
Cite this
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Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response. / Chen, S.; Bomer, Johan G.; Carlen, Edwin; van den Berg, Albert.
In: Nano letters, Vol. 11, No. 6, 06.2011, p. 2334-2341.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response
AU - Chen, S.
AU - Bomer, Johan G.
AU - Carlen, Edwin
AU - van den Berg, Albert
N1 - eemcs-eprint-20330
PY - 2011/6
Y1 - 2011/6
N2 - Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.
AB - Nanoscale ISFET (ion sensitive field-effect transistor) pH sensors are presented that produce the well-known sub-Nernstian pH-response for silicon dioxide (SiO2) surfaces and near ideal Nernstian sensitivity for alumina (Al2O3) surfaces. Titration experiments of SiO2 surfaces resulted in a varying pH sensitivity similar to 20 mV/pH for pH near 2 and >45 mV/pH for pH > 5. Measured pH responses from titrations of thin (15 nm) atomic layer deposited (ALD) alumina (Al2O3) surfaces on the nanoISFETs resulted in near ideal Nemstian pH sensitivity of 57.8 +/- 1.2 mV/pH (pH range: 2-10; T = 22 degrees C) and temperature sensitivity of 0.19 mV/pH degrees C (22 degrees C <= T <= 40 degrees C). A comprehensive analytical model of the nanoISFET sensor, which is based on the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) model, accompanies the experimental results and an extracted Delta pK approximate to 1.5 from the measured responses further supports the near ideal Nernstian pH sensitivity.
KW - EWI-20330
KW - IR-77674
KW - METIS-277716
U2 - 10.1021/nl200623n
DO - 10.1021/nl200623n
M3 - Article
VL - 11
SP - 2334
EP - 2341
JO - Nano letters
JF - Nano letters
SN - 1530-6984
IS - 6
ER -