Aluminum nitride for heatspreading in RF IC's

L. La Spina, E. Iborra, H. Schellevis, M. Clement, J. Olivares, L. K. Nanver

Research output: Contribution to journalArticleAcademicpeer-review

27 Citations (Scopus)

Abstract

To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

Original languageEnglish
Pages (from-to)1359-1363
Number of pages5
JournalSolid-state electronics
Volume52
Issue number9
DOIs
Publication statusPublished - 9 May 2008
Externally publishedYes

Fingerprint

Aluminum nitride
aluminum nitrides
Silicon
junction transistors
Glass
glass
Reactive sputtering
Bipolar transistors
silicon
thermal resistance
bipolar transistors
drainage
Heat resistance
compatibility
residual stress
Residual stresses
Thermal conductivity
isolation
thermal conductivity
sputtering

Keywords

  • Aluminum nitride
  • Bipolar transistor
  • Electrothermal phenomena
  • Heatspreader
  • Piezoelectric characteristics
  • RF integration
  • Thermal instabilities
  • Thermal resistance

Cite this

La Spina, L. ; Iborra, E. ; Schellevis, H. ; Clement, M. ; Olivares, J. ; Nanver, L. K. / Aluminum nitride for heatspreading in RF IC's. In: Solid-state electronics. 2008 ; Vol. 52, No. 9. pp. 1359-1363.
@article{772644c5f8d94a6589fa40545d44ed4a,
title = "Aluminum nitride for heatspreading in RF IC's",
abstract = "To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70{\%} in the value of the thermal resistance.",
keywords = "Aluminum nitride, Bipolar transistor, Electrothermal phenomena, Heatspreader, Piezoelectric characteristics, RF integration, Thermal instabilities, Thermal resistance",
author = "{La Spina}, L. and E. Iborra and H. Schellevis and M. Clement and J. Olivares and Nanver, {L. K.}",
year = "2008",
month = "5",
day = "9",
doi = "10.1016/j.sse.2008.04.009",
language = "English",
volume = "52",
pages = "1359--1363",
journal = "Solid-state electronics",
issn = "0038-1101",
publisher = "Elsevier",
number = "9",

}

Aluminum nitride for heatspreading in RF IC's. / La Spina, L.; Iborra, E.; Schellevis, H.; Clement, M.; Olivares, J.; Nanver, L. K.

In: Solid-state electronics, Vol. 52, No. 9, 09.05.2008, p. 1359-1363.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Aluminum nitride for heatspreading in RF IC's

AU - La Spina, L.

AU - Iborra, E.

AU - Schellevis, H.

AU - Clement, M.

AU - Olivares, J.

AU - Nanver, L. K.

PY - 2008/5/9

Y1 - 2008/5/9

N2 - To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

AB - To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

KW - Aluminum nitride

KW - Bipolar transistor

KW - Electrothermal phenomena

KW - Heatspreader

KW - Piezoelectric characteristics

KW - RF integration

KW - Thermal instabilities

KW - Thermal resistance

UR - http://www.scopus.com/inward/record.url?scp=84932938924&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2008.04.009

DO - 10.1016/j.sse.2008.04.009

M3 - Article

VL - 52

SP - 1359

EP - 1363

JO - Solid-state electronics

JF - Solid-state electronics

SN - 0038-1101

IS - 9

ER -