Abstract
Aluminum nitride heatspreaders are demonstrated to provide a large reduction of the thermal resistance of silicon-on-glass bipolar junction transistors. 3-D thermal-only simulations are performed to show the further benefit that can be achieved by combining deposited aluminum-nitride layers as heatspreaders with copper heatsinks. Compared to a reference device, a reduction of more than 90% in the value of thermal resistance can be obtained when the transistor is sandwiched between two layers of AlN, one deposited on the frontside of the wafer (front-wafer) and one on the backside of the wafer (back-wafer) of thickness 6 μm and 4 μm, respectively, and a Cu block of 4×70×70 μm3is added.
Original language | English |
---|---|
Title of host publication | EuroSimE 2008 |
Subtitle of host publication | International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems |
Publisher | IEEE |
ISBN (Print) | 978-1-4244-2127-5 |
DOIs | |
Publication status | Published - 20 May 2008 |
Externally published | Yes |
Event | 9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008 - Konzerthaus, Freiburg im Breisgau, Germany Duration: 20 Apr 2008 → 23 Apr 2008 Conference number: 9 |
Conference
Conference | 9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008 |
---|---|
Abbreviated title | EuroSimE |
Country/Territory | Germany |
City | Freiburg im Breisgau |
Period | 20/04/08 → 23/04/08 |