Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

Luigi La Spina*, Ilaria Marano, Vincenzo d'Alessandro, Hugo Schellevis, Lis K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

Abstract

Aluminum nitride heatspreaders are demonstrated to provide a large reduction of the thermal resistance of silicon-on-glass bipolar junction transistors. 3-D thermal-only simulations are performed to show the further benefit that can be achieved by combining deposited aluminum-nitride layers as heatspreaders with copper heatsinks. Compared to a reference device, a reduction of more than 90% in the value of thermal resistance can be obtained when the transistor is sandwiched between two layers of AlN, one deposited on the frontside of the wafer (front-wafer) and one on the backside of the wafer (back-wafer) of thickness 6 μm and 4 μm, respectively, and a Cu block of 4×70×70 μm3is added.

Original languageEnglish
Title of host publicationEuroSimE 2008
Subtitle of host publicationInternational Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems
PublisherIEEE Computer Society
ISBN (Print)978-1-4244-2127-5
DOIs
Publication statusPublished - 20 May 2008
Externally publishedYes
Event9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008 - Konzerthaus, Freiburg im Breisgau, Germany
Duration: 20 Apr 200823 Apr 2008
Conference number: 9

Conference

Conference9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008
Abbreviated titleEuroSimE
CountryGermany
CityFreiburg im Breisgau
Period20/04/0823/04/08

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