Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

Luigi La Spina; Ilaria Marano; Vincenzo d'Alessandro; Hugo Schellevis; Lis K. Nanver

doi:10.1109/ESIME.2008.4525061

Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

Luigi La Spina^*, Ilaria Marano, Vincenzo d'Alessandro, Hugo Schellevis, Lis K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

Abstract

Aluminum nitride heatspreaders are demonstrated to provide a large reduction of the thermal resistance of silicon-on-glass bipolar junction transistors. 3-D thermal-only simulations are performed to show the further benefit that can be achieved by combining deposited aluminum-nitride layers as heatspreaders with copper heatsinks. Compared to a reference device, a reduction of more than 90% in the value of thermal resistance can be obtained when the transistor is sandwiched between two layers of AlN, one deposited on the frontside of the wafer (front-wafer) and one on the backside of the wafer (back-wafer) of thickness 6 μm and 4 μm, respectively, and a Cu block of 4×70×70 μm³is added.

Original language	English
Title of host publication	EuroSimE 2008
Subtitle of host publication	International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems
Publisher	IEEE
ISBN (Print)	978-1-4244-2127-5
DOIs	https://doi.org/10.1109/ESIME.2008.4525061
Publication status	Published - 20 May 2008
Externally published	Yes
Event	9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008 - Konzerthaus, Freiburg im Breisgau, Germany Duration: 20 Apr 2008 → 23 Apr 2008 Conference number: 9

Conference

Conference	9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008
Abbreviated title	EuroSimE
Country/Territory	Germany
City	Freiburg im Breisgau
Period	20/04/08 → 23/04/08

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10.1109/ESIME.2008.4525061

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La Spina, L., Marano, I., d'Alessandro, V., Schellevis, H., & Nanver, L. K. (2008). Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors. In EuroSimE 2008: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems Article 4525061 IEEE. https://doi.org/10.1109/ESIME.2008.4525061

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title = "Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors",

abstract = "Aluminum nitride heatspreaders are demonstrated to provide a large reduction of the thermal resistance of silicon-on-glass bipolar junction transistors. 3-D thermal-only simulations are performed to show the further benefit that can be achieved by combining deposited aluminum-nitride layers as heatspreaders with copper heatsinks. Compared to a reference device, a reduction of more than 90% in the value of thermal resistance can be obtained when the transistor is sandwiched between two layers of AlN, one deposited on the frontside of the wafer (front-wafer) and one on the backside of the wafer (back-wafer) of thickness 6 μm and 4 μm, respectively, and a Cu block of 4×70×70 μm3is added.",

author = "{La Spina}, Luigi and Ilaria Marano and Vincenzo d'Alessandro and Hugo Schellevis and Nanver, {Lis K.}",

year = "2008",

month = may,

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doi = "10.1109/ESIME.2008.4525061",

language = "English",

isbn = "978-1-4244-2127-5",

booktitle = "EuroSimE 2008",

publisher = "IEEE",

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note = "9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008, EuroSimE ; Conference date: 20-04-2008 Through 23-04-2008",

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La Spina, L, Marano, I, d'Alessandro, V, Schellevis, H & Nanver, LK 2008, Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors. in EuroSimE 2008: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems., 4525061, IEEE, 9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008, Freiburg im Breisgau, Baden-Württemberg, Germany, 20/04/08. https://doi.org/10.1109/ESIME.2008.4525061

Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors. / La Spina, Luigi; Marano, Ilaria; d'Alessandro, Vincenzo et al.
EuroSimE 2008: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems. IEEE, 2008. 4525061.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

AU - La Spina, Luigi

AU - Marano, Ilaria

AU - d'Alessandro, Vincenzo

AU - Schellevis, Hugo

AU - Nanver, Lis K.

N1 - Conference code: 9

PY - 2008/5/20

Y1 - 2008/5/20

N2 - Aluminum nitride heatspreaders are demonstrated to provide a large reduction of the thermal resistance of silicon-on-glass bipolar junction transistors. 3-D thermal-only simulations are performed to show the further benefit that can be achieved by combining deposited aluminum-nitride layers as heatspreaders with copper heatsinks. Compared to a reference device, a reduction of more than 90% in the value of thermal resistance can be obtained when the transistor is sandwiched between two layers of AlN, one deposited on the frontside of the wafer (front-wafer) and one on the backside of the wafer (back-wafer) of thickness 6 μm and 4 μm, respectively, and a Cu block of 4×70×70 μm3is added.

AB - Aluminum nitride heatspreaders are demonstrated to provide a large reduction of the thermal resistance of silicon-on-glass bipolar junction transistors. 3-D thermal-only simulations are performed to show the further benefit that can be achieved by combining deposited aluminum-nitride layers as heatspreaders with copper heatsinks. Compared to a reference device, a reduction of more than 90% in the value of thermal resistance can be obtained when the transistor is sandwiched between two layers of AlN, one deposited on the frontside of the wafer (front-wafer) and one on the backside of the wafer (back-wafer) of thickness 6 μm and 4 μm, respectively, and a Cu block of 4×70×70 μm3is added.

U2 - 10.1109/ESIME.2008.4525061

DO - 10.1109/ESIME.2008.4525061

M3 - Conference contribution

AN - SCOPUS:49249093589

SN - 978-1-4244-2127-5

BT - EuroSimE 2008

PB - IEEE

T2 - 9th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008

Y2 - 20 April 2008 through 23 April 2008

ER -

Aluminum-nitride thin-film heatspreaders integrated in bipolar transistors

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