Ambipolar charge sensing of few-charge quantum dots

Antonio José Sousa de Almeida; Alejandro  Marquez Seco; T. van de Berg; Bram  van de Ven; Sergei  Amitonov; Floris Arnoud Zwanenburg

doi:10.1103/PhysRevB.101.201301

Ambipolar charge sensing of few-charge quantum dots

Antonio José Sousa de Almeida, Alejandro Marquez Seco, T. van de Berg, Bram van de Ven, Sergei Amitonov, Floris Arnoud Zwanenburg

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.

Original language	English
Article number	201301
Journal	Physical review B: Covering condensed matter and materials physics
Volume	101
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.101.201301
Publication status	Published - 20 May 2020

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title = "Ambipolar charge sensing of few-charge quantum dots",

abstract = "We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.",

author = "{Sousa de Almeida}, {Antonio Jos{\'e}} and {Marquez Seco}, Alejandro and {van de Berg}, T. and {van de Ven}, Bram and Sergei Amitonov and Zwanenburg, {Floris Arnoud}",

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journal = "Physical review B: Covering condensed matter and materials physics",

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Ambipolar charge sensing of few-charge quantum dots. / Sousa de Almeida, Antonio José; Marquez Seco, Alejandro ; van de Berg, T.; van de Ven, Bram ; Amitonov, Sergei ; Zwanenburg, Floris Arnoud.

In: Physical review B: Covering condensed matter and materials physics, Vol. 101, No. 20, 201301, 20.05.2020.

Research output: Contribution to journal › Article › Academic › peer-review

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T1 - Ambipolar charge sensing of few-charge quantum dots

AU - Sousa de Almeida, Antonio José

AU - Marquez Seco, Alejandro

AU - van de Berg, T.

AU - van de Ven, Bram

AU - Amitonov, Sergei

AU - Zwanenburg, Floris Arnoud

PY - 2020/5/20

Y1 - 2020/5/20

N2 - We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.

AB - We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.

U2 - 10.1103/PhysRevB.101.201301

DO - 10.1103/PhysRevB.101.201301

M3 - Article

VL - 101

JO - Physical review B: Covering condensed matter and materials physics

JF - Physical review B: Covering condensed matter and materials physics

SN - 2469-9950

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