Ambipolar charge sensing of few-charge quantum dots

A.J. Sousa de Almeida*, A. Márquez Seco, T. van den Berg, B. van de Ven, F. Bruijnes, S.V. Amitonov, F.A. Zwanenburg

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.

Original languageEnglish
Article number201301
JournalPhysical review B: Covering condensed matter and materials physics
Volume101
Issue number20
DOIs
Publication statusPublished - 15 May 2020

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