Abstract
We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.
Original language | English |
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Article number | 201301 |
Journal | Physical review B: Covering condensed matter and materials physics |
Volume | 101 |
Issue number | 20 |
DOIs | |
Publication status | Published - 20 May 2020 |