Ambipolar charge sensing of few-charge quantum dots

A.J. Sousa de Almeida; A. Márquez Seco; T. van den Berg; B. van de Ven; F. Bruijnes; S.V. Amitonov; F.A. Zwanenburg

doi:10.1103/PhysRevB.101.201301

Ambipolar charge sensing of few-charge quantum dots

A.J. Sousa de Almeida^*
, A. Márquez Seco
, T. van den Berg
, B. van de Ven
, F. Bruijnes
, S.V. Amitonov
, F.A. Zwanenburg

^*Corresponding author for this work

Nano Electronics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.

Original language	English
Article number	201301
Journal	Physical review B: Covering condensed matter and materials physics
Volume	101
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.101.201301
Publication status	Published - 15 May 2020

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@article{6da7e6411f714e2eb3e2565dfa26d726,

title = "Ambipolar charge sensing of few-charge quantum dots",

abstract = "We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.",

author = "\{Sousa de Almeida\}, A.J. and Seco, \{A. M{\'a}rquez\} and \{van den Berg\}, T. and \{van de Ven\}, B. and F. Bruijnes and S.V. Amitonov and F.A. Zwanenburg",

note = "Funding Information: This work was supported by NWA route Quantum/Nano-revolutie, and by the research programme Atomic physics in the solid state (Project No. 14167) partly financed by the Netherlands Organization for Scientific Research. We thank Johnny Sanderink for technical support, and Henry Yang and Alexander R. Hamilton for useful discussions. Publisher Copyright: {\textcopyright} 2020 American Physical Society.",

year = "2020",

month = may,

day = "15",

doi = "10.1103/PhysRevB.101.201301",

language = "English",

volume = "101",

journal = "Physical review B: Covering condensed matter and materials physics",

issn = "2469-9950",

publisher = "American Physical Society",

number = "20",

}

TY - JOUR

T1 - Ambipolar charge sensing of few-charge quantum dots

AU - Sousa de Almeida, A.J.

AU - Seco, A. Márquez

AU - van den Berg, T.

AU - van de Ven, B.

AU - Bruijnes, F.

AU - Amitonov, S.V.

AU - Zwanenburg, F.A.

N1 - Funding Information: This work was supported by NWA route Quantum/Nano-revolutie, and by the research programme Atomic physics in the solid state (Project No. 14167) partly financed by the Netherlands Organization for Scientific Research. We thank Johnny Sanderink for technical support, and Henry Yang and Alexander R. Hamilton for useful discussions. Publisher Copyright: © 2020 American Physical Society.

PY - 2020/5/15

Y1 - 2020/5/15

N2 - We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.

AB - We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.

UR - https://www.scopus.com/pages/publications/85085843476

U2 - 10.1103/PhysRevB.101.201301

DO - 10.1103/PhysRevB.101.201301

M3 - Article

AN - SCOPUS:85085843476

SN - 2469-9950

VL - 101

JO - Physical review B: Covering condensed matter and materials physics

JF - Physical review B: Covering condensed matter and materials physics

IS - 20

M1 - 201301

ER -

Ambipolar charge sensing of few-charge quantum dots

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