Amorphous gallium oxide grown by low-temperature PECVD

Eiji Kobayashi, Mathieu Boccard, Quentin Jeangros, Nathan Rodkey, Daniel Vresilovic, Aïcha Hessler-Wyser, Max Döbeli, Daniel Franta, Stefaan De Wolf, Monica Morales-Masis, Christophe Ballif

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    Abstract

    Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.

    Original languageEnglish
    Article number021518
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume36
    Issue number2
    DOIs
    Publication statusPublished - 2 Mar 2018

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    Cite this

    Kobayashi, E., Boccard, M., Jeangros, Q., Rodkey, N., Vresilovic, D., Hessler-Wyser, A., ... Ballif, C. (2018). Amorphous gallium oxide grown by low-temperature PECVD. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 36(2), [021518]. https://doi.org/10.1116/1.5018800