Abstract
Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
| Original language | English |
|---|---|
| Article number | 021518 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 36 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2 Mar 2018 |
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Amorphous gallium oxide grown by low-temperature PECVD. / Kobayashi, Eiji; Boccard, Mathieu; Jeangros, Quentin; Rodkey, Nathan; Vresilovic, Daniel; Hessler-Wyser, Aïcha; Döbeli, Max; Franta, Daniel; De Wolf, Stefaan; Morales-Masis, Monica; Ballif, Christophe.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 36, No. 2, 021518, 02.03.2018.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Amorphous gallium oxide grown by low-temperature PECVD
AU - Kobayashi, Eiji
AU - Boccard, Mathieu
AU - Jeangros, Quentin
AU - Rodkey, Nathan
AU - Vresilovic, Daniel
AU - Hessler-Wyser, Aïcha
AU - Döbeli, Max
AU - Franta, Daniel
AU - De Wolf, Stefaan
AU - Morales-Masis, Monica
AU - Ballif, Christophe
PY - 2018/3/2
Y1 - 2018/3/2
N2 - Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
AB - Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
UR - http://www.scopus.com/inward/record.url?scp=85042872472&partnerID=8YFLogxK
U2 - 10.1116/1.5018800
DO - 10.1116/1.5018800
M3 - Article
VL - 36
JO - Journal of vacuum science and technology A: vacuum, surfaces, and films
JF - Journal of vacuum science and technology A: vacuum, surfaces, and films
SN - 0734-2101
IS - 2
M1 - 021518
ER -