Amorphous gallium oxide grown by low-temperature PECVD

Eiji Kobayashi, Mathieu Boccard, Quentin Jeangros, Nathan Rodkey, Daniel Vresilovic, Aïcha Hessler-Wyser, Max Döbeli, Daniel Franta, Stefaan De Wolf, Monica Morales-Masis, Christophe Ballif

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    Abstract

    Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.

    Original languageEnglish
    Article number021518
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume36
    Issue number2
    DOIs
    Publication statusPublished - 2 Mar 2018

    Fingerprint

    gallium oxides
    Gallium
    cold plasmas
    Plasma enhanced chemical vapor deposition
    Oxides
    metal oxides
    vapor deposition
    refractivity
    broadband
    damage
    Refractive index
    energy conversion
    Metals
    voids
    energy dissipation
    Electron energy loss spectroscopy
    electron energy
    Deposition rates
    Energy conversion
    Optoelectronic devices

    Cite this

    Kobayashi, E., Boccard, M., Jeangros, Q., Rodkey, N., Vresilovic, D., Hessler-Wyser, A., ... Ballif, C. (2018). Amorphous gallium oxide grown by low-temperature PECVD. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 36(2), [021518]. https://doi.org/10.1116/1.5018800
    Kobayashi, Eiji ; Boccard, Mathieu ; Jeangros, Quentin ; Rodkey, Nathan ; Vresilovic, Daniel ; Hessler-Wyser, Aïcha ; Döbeli, Max ; Franta, Daniel ; De Wolf, Stefaan ; Morales-Masis, Monica ; Ballif, Christophe. / Amorphous gallium oxide grown by low-temperature PECVD. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2018 ; Vol. 36, No. 2.
    @article{36bfda12eae248948bc58952842fa761,
    title = "Amorphous gallium oxide grown by low-temperature PECVD",
    abstract = "Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.",
    author = "Eiji Kobayashi and Mathieu Boccard and Quentin Jeangros and Nathan Rodkey and Daniel Vresilovic and A{\"i}cha Hessler-Wyser and Max D{\"o}beli and Daniel Franta and {De Wolf}, Stefaan and Monica Morales-Masis and Christophe Ballif",
    year = "2018",
    month = "3",
    day = "2",
    doi = "10.1116/1.5018800",
    language = "English",
    volume = "36",
    journal = "Journal of vacuum science and technology A: vacuum, surfaces, and films",
    issn = "0734-2101",
    publisher = "AVS Science and Technology Society",
    number = "2",

    }

    Kobayashi, E, Boccard, M, Jeangros, Q, Rodkey, N, Vresilovic, D, Hessler-Wyser, A, Döbeli, M, Franta, D, De Wolf, S, Morales-Masis, M & Ballif, C 2018, 'Amorphous gallium oxide grown by low-temperature PECVD' Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 36, no. 2, 021518. https://doi.org/10.1116/1.5018800

    Amorphous gallium oxide grown by low-temperature PECVD. / Kobayashi, Eiji; Boccard, Mathieu; Jeangros, Quentin; Rodkey, Nathan; Vresilovic, Daniel; Hessler-Wyser, Aïcha; Döbeli, Max; Franta, Daniel; De Wolf, Stefaan; Morales-Masis, Monica; Ballif, Christophe.

    In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 36, No. 2, 021518, 02.03.2018.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Amorphous gallium oxide grown by low-temperature PECVD

    AU - Kobayashi, Eiji

    AU - Boccard, Mathieu

    AU - Jeangros, Quentin

    AU - Rodkey, Nathan

    AU - Vresilovic, Daniel

    AU - Hessler-Wyser, Aïcha

    AU - Döbeli, Max

    AU - Franta, Daniel

    AU - De Wolf, Stefaan

    AU - Morales-Masis, Monica

    AU - Ballif, Christophe

    PY - 2018/3/2

    Y1 - 2018/3/2

    N2 - Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.

    AB - Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.

    UR - http://www.scopus.com/inward/record.url?scp=85042872472&partnerID=8YFLogxK

    U2 - 10.1116/1.5018800

    DO - 10.1116/1.5018800

    M3 - Article

    VL - 36

    JO - Journal of vacuum science and technology A: vacuum, surfaces, and films

    JF - Journal of vacuum science and technology A: vacuum, surfaces, and films

    SN - 0734-2101

    IS - 2

    M1 - 021518

    ER -

    Kobayashi E, Boccard M, Jeangros Q, Rodkey N, Vresilovic D, Hessler-Wyser A et al. Amorphous gallium oxide grown by low-temperature PECVD. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2018 Mar 2;36(2). 021518. https://doi.org/10.1116/1.5018800