Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

S. B. Evseev, L. K. Nanver, B. Rejaei, S. Milosavljević

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

A large number of dielectric layer stacks of different combinations of SiC, SiN and SiO2 are studied with respect to their ability to suppress surface-channel currents that give radio-frequency (RF) and microwave losses in coplanar waveguides (CPWs), integrated on high-resistivity silicon (HRS) substrates. Measurements are performed of the Space Charge Layer sheet resistances (SCL-RSH) and the RF losses in CPWs. The lowest, bias-independent losses of 1.6 dB/cm are achieved on thin Low-Pressure Chemical Vapor Deposition (LPCVD)-nitrated Plasma-Enhanced Chemical Vapor Deposition (PECVD) amorphous (α-) SiC layers, for which the surface currents are conducted away from the crystalline HRS into the α-SiC:N. The nitridation appears to have changed the surface of the SiC from an insulating to a highly resistive layer, where the presence of SiC:N compounds suggests a possible n-doping by nitrogen. The α-SiC/SiC:N layer is known to remain stable during high-temperature thermal treatments typically used for dopant activation as indicated previously.

Original languageEnglish
Pages (from-to)2-7
Number of pages6
JournalMicroelectronic engineering
Volume125
DOIs
Publication statusPublished - 1 Aug 2014
Externally publishedYes

Fingerprint

Microwave frequencies
Silicon
Amorphous silicon
Silicon carbide
Nitrides
silicon carbides
amorphous silicon
nitrides
radio frequencies
Coplanar waveguides
microwaves
silicon
Doping (additives)
Low pressure chemical vapor deposition
Nitridation
Sheet resistance
Plasma enhanced chemical vapor deposition
Electric space charge
vapor deposition
waveguides

Keywords

  • Coplanar waveguides
  • High-resistivity silicon
  • Radio-frequency surface losses

Cite this

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abstract = "A large number of dielectric layer stacks of different combinations of SiC, SiN and SiO2 are studied with respect to their ability to suppress surface-channel currents that give radio-frequency (RF) and microwave losses in coplanar waveguides (CPWs), integrated on high-resistivity silicon (HRS) substrates. Measurements are performed of the Space Charge Layer sheet resistances (SCL-RSH) and the RF losses in CPWs. The lowest, bias-independent losses of 1.6 dB/cm are achieved on thin Low-Pressure Chemical Vapor Deposition (LPCVD)-nitrated Plasma-Enhanced Chemical Vapor Deposition (PECVD) amorphous (α-) SiC layers, for which the surface currents are conducted away from the crystalline HRS into the α-SiC:N. The nitridation appears to have changed the surface of the SiC from an insulating to a highly resistive layer, where the presence of SiC:N compounds suggests a possible n-doping by nitrogen. The α-SiC/SiC:N layer is known to remain stable during high-temperature thermal treatments typically used for dopant activation as indicated previously.",
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Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses. / Evseev, S. B.; Nanver, L. K.; Rejaei, B.; Milosavljević, S.

In: Microelectronic engineering, Vol. 125, 01.08.2014, p. 2-7.

Research output: Contribution to journalArticleAcademicpeer-review

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