Amplification in epitaxially grown Er:(Gd,Lu)2O3 waveguides for active integrated optical devices

Andreas Kahn, Henning Kühn, Sebastian Heinrich, Klaus Petermann, J. Bradley, Kerstin Worhoff, Markus Pollnau, Y. Kuzminykh, G. Huber

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    31 Citations (Scopus)


    Monocrystalline lattice matched $Er(0.6$ $at.$ %):$(Gd,Lu)_2O_3$ films with nearly atomically flat surfaces and thicknesses up to 3 μm have been grown on $Y_2O_3$ substrates using pulsed laser deposition. The emission cross sections were comparable with the ones of $Er:Y_2O_3$ bulk crystals, showing only a marginal spectral broadening. Rib channel waveguiding could be demonstrated after structuring the films with reactive ion etching. Gain measurements have been performed and the results compared with a theoretical gain spectrum. A gain of 5.9 dB/cm could be measured at 1535.5 nm through in-band pumping at 1480 nm. The scattering losses in such a 7 mm long rib waveguide have been determined to be below 4.4 dB at 632.8 nm. An extrapolation to the gain wavelength with the $λ^{−4}$-Rayleigh law of scattering resulted in losses of 0.2 dB/cm at 1.5 μm.
    Original languageUndefined
    Pages (from-to)1850-1853
    Number of pages4
    JournalJournal of the Optical Society of America. B: Optical physics
    Issue numberWoTUG-31/11
    Publication statusPublished - Nov 2008


    • EWI-14325
    • IR-62582
    • METIS-254952
    • IOMS-APD: Active Photonic Devices

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