Abstract
Wide-band LNAs suffer from a fundamental
trade-off between noise figure NF and source impedance
matching, which limits NF to values typically above 3dB.
Recently, a feed-forward noise canceling technique has been
proposed to break this trade-off. This paper reviews the
principle of the technique and its key properties. Although
the technique has been applied to wideband CMOS LNAs, it
can just as well be implemented exploiting transconductance
elements realized with other types of transistors. To
examplify this claim, measurement results on a bipolar
amplifier exploiting noise cancellation will also be presented.
Original language | Undefined |
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Title of host publication | 12th Gallium Arsenide and other compound semiconductor Application Symposium (GAAS) |
Place of Publication | Amsterdam, Netherlands |
Publisher | Horizon House Publications Ltd |
Pages | 371-374 |
Number of pages | 4 |
ISBN (Print) | 1580539947 |
Publication status | Published - Oct 2004 |
Event | 12th Gallium Arsenide and other compound semiconductor Application Symposium (GAAS) - Amsterdam, the Netherlands Duration: 11 Oct 2004 → 15 Oct 2004 |
Conference
Conference | 12th Gallium Arsenide and other compound semiconductor Application Symposium (GAAS) |
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Period | 11/10/04 → 15/10/04 |
Other | 11-15 October 2004 |
Keywords
- METIS-218832
- EWI-14486
- IR-67456