An 1 GHz all-implanted vertical pnp transistor

F.W. Ragay; A.A.I. Aarnink; J. Middelhoek

doi:10.1007/978-3-642-52314-4_106

An 1 GHz all-implanted vertical pnp transistor

F.W. Ragay^*, A.A.I. Aarnink, J. Middelhoek

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Vertical all implanted PNP transistors have been fabricated using high energy ion-implantation. The PNP transistor process can be implemented in standard NPN buried collector processes, with epitaxial layers larger than 2.5 μm, to achieve a high performance complementary bipolar process. The collector is formed by implantation of doubly charged boron ions with an energy of 500 keV. Base and emitter regions are also implanted. Independent change of the base concentration is possible. The base and collector currents are ideal over 5 decades. The current gain is ≅ 35 and constant over 4 decades. Cut off frequencies of the PNP transistors of over 1 GHz have been measured.

Original language	English
Title of host publication	ESSDERC '89
Subtitle of host publication	Proceedings of the 19th European Solid State Device Research Conference
Editors	Heiner Ryssel, Anton Heuberger, Peter Lange
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	519-522
Number of pages	4
ISBN (Print)	978-0-387-51000-2
DOIs	https://doi.org/10.1007/978-3-642-52314-4_106
Publication status	Published - 1989
Event	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: 11 Sept 1989 → 14 Sept 1989 Conference number: 19

Publication series

Name	European Solid-State Device Research Conference (ESSDERC)
Publisher	IEEE
Volume	1989
ISSN (Print)	1930-8876

Conference

Conference	19th European Solid State Device Research Conference, ESSDERC 1989
Abbreviated title	ESSDERC
Country/Territory	Germany
City	Berlin
Period	11/09/89 → 14/09/89

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10.1007/978-3-642-52314-4_106

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Ragay, F. W., Aarnink, A. A. I., & Middelhoek, J. (1989). An 1 GHz all-implanted vertical pnp transistor. In H. Ryssel, A. Heuberger, & P. Lange (Eds.), ESSDERC '89: Proceedings of the 19th European Solid State Device Research Conference (pp. 519-522). Article 5436554 (European Solid-State Device Research Conference (ESSDERC); Vol. 1989). IEEE. https://doi.org/10.1007/978-3-642-52314-4_106

@inproceedings{21ced6416d3a412290e9e608069441a8,

title = "An 1 GHz all-implanted vertical pnp transistor",

abstract = "Vertical all implanted PNP transistors have been fabricated using high energy ion-implantation. The PNP transistor process can be implemented in standard NPN buried collector processes, with epitaxial layers larger than 2.5 μm, to achieve a high performance complementary bipolar process. The collector is formed by implantation of doubly charged boron ions with an energy of 500 keV. Base and emitter regions are also implanted. Independent change of the base concentration is possible. The base and collector currents are ideal over 5 decades. The current gain is ≅ 35 and constant over 4 decades. Cut off frequencies of the PNP transistors of over 1 GHz have been measured.",

author = "F.W. Ragay and A.A.I. Aarnink and J. Middelhoek",

year = "1989",

doi = "10.1007/978-3-642-52314-4_106",

language = "English",

isbn = "978-0-387-51000-2",

series = "European Solid-State Device Research Conference (ESSDERC)",

publisher = "IEEE",

pages = "519--522",

editor = "Heiner Ryssel and Anton Heuberger and Peter Lange",

booktitle = "ESSDERC '89",

address = "United States",

note = "19th European Solid State Device Research Conference, ESSDERC 1989, ESSDERC ; Conference date: 11-09-1989 Through 14-09-1989",

}

Ragay, FW, Aarnink, AAI & Middelhoek, J 1989, An 1 GHz all-implanted vertical pnp transistor. in H Ryssel, A Heuberger & P Lange (eds), ESSDERC '89: Proceedings of the 19th European Solid State Device Research Conference., 5436554, European Solid-State Device Research Conference (ESSDERC), vol. 1989, IEEE, Piscataway, NJ, pp. 519-522, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 11/09/89. https://doi.org/10.1007/978-3-642-52314-4_106

An 1 GHz all-implanted vertical pnp transistor. / Ragay, F.W.; Aarnink, A.A.I.; Middelhoek, J.
ESSDERC '89: Proceedings of the 19th European Solid State Device Research Conference. ed. / Heiner Ryssel; Anton Heuberger; Peter Lange. Piscataway, NJ: IEEE, 1989. p. 519-522 5436554 (European Solid-State Device Research Conference (ESSDERC); Vol. 1989).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - An 1 GHz all-implanted vertical pnp transistor

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AU - Aarnink, A.A.I.

AU - Middelhoek, J.

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PY - 1989

Y1 - 1989

N2 - Vertical all implanted PNP transistors have been fabricated using high energy ion-implantation. The PNP transistor process can be implemented in standard NPN buried collector processes, with epitaxial layers larger than 2.5 μm, to achieve a high performance complementary bipolar process. The collector is formed by implantation of doubly charged boron ions with an energy of 500 keV. Base and emitter regions are also implanted. Independent change of the base concentration is possible. The base and collector currents are ideal over 5 decades. The current gain is ≅ 35 and constant over 4 decades. Cut off frequencies of the PNP transistors of over 1 GHz have been measured.

AB - Vertical all implanted PNP transistors have been fabricated using high energy ion-implantation. The PNP transistor process can be implemented in standard NPN buried collector processes, with epitaxial layers larger than 2.5 μm, to achieve a high performance complementary bipolar process. The collector is formed by implantation of doubly charged boron ions with an energy of 500 keV. Base and emitter regions are also implanted. Independent change of the base concentration is possible. The base and collector currents are ideal over 5 decades. The current gain is ≅ 35 and constant over 4 decades. Cut off frequencies of the PNP transistors of over 1 GHz have been measured.

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DO - 10.1007/978-3-642-52314-4_106

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T3 - European Solid-State Device Research Conference (ESSDERC)

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EP - 522

BT - ESSDERC '89

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A2 - Lange, Peter

PB - IEEE

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T2 - 19th European Solid State Device Research Conference, ESSDERC 1989

Y2 - 11 September 1989 through 14 September 1989

ER -

An 1 GHz all-implanted vertical pnp transistor

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