An 1 GHz all-implanted vertical pnp transistor

F.W. Ragay*, A.A.I. Aarnink, J. Middelhoek

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


    Vertical all implanted PNP transistors have been fabricated using high energy ion-implantation. The PNP transistor process can be implemented in standard NPN buried collector processes, with epitaxial layers larger than 2.5 μm, to achieve a high performance complementary bipolar process. The collector is formed by implantation of doubly charged boron ions with an energy of 500 keV. Base and emitter regions are also implanted. Independent change of the base concentration is possible. The base and collector currents are ideal over 5 decades. The current gain is ≅ 35 and constant over 4 decades. Cut off frequencies of the PNP transistors of over 1 GHz have been measured.

    Original languageEnglish
    Title of host publicationESSDERC '89
    Subtitle of host publicationProceedings of the 19th European Solid State Device Research Conference
    EditorsHeiner Ryssel, Anton Heuberger, Peter Lange
    Place of PublicationPiscataway, NJ
    Number of pages4
    ISBN (Print)978-0-387-51000-2
    Publication statusPublished - 1989
    Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
    Duration: 11 Sept 198914 Sept 1989
    Conference number: 19

    Publication series

    NameEuropean Solid-State Device Research Conference (ESSDERC)
    ISSN (Print)1930-8876


    Conference19th European Solid State Device Research Conference, ESSDERC 1989
    Abbreviated titleESSDERC


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