An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

B. Van Hao, Frank Bert Wiggers, Machiel Pieter de Jong, Alexeij Y. Kovalgin

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.
    Original languageUndefined
    Title of host publicationInternational Conference on Microelectronic Test Structures, ICMTS 2014
    Place of PublicationUSA
    PublisherIEEE Circuits & Systems Society
    Pages53-57
    Number of pages5
    ISBN (Print)978-1-4799-2193-5
    DOIs
    Publication statusPublished - 24 Mar 2014
    Event27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy
    Duration: 24 Mar 201427 Mar 2014
    Conference number: 27
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog14.pdf

    Publication series

    Name
    PublisherIEEE Circuits & Systems Society
    ISSN (Print)1071-9032

    Conference

    Conference27th International Conference on Microelectronic Test Structures, ICMTS 2014
    Abbreviated titleICMTS
    CountryItaly
    CityUdine
    Period24/03/1427/03/14
    Internet address

    Keywords

    • EWI-25006
    • METIS-306002
    • in-situ capping layer
    • ultrathin conducting films
    • platinum electrodes
    • silicidation reaction
    • Pt
    • Si
    • Electrical properties
    • native oxidation
    • nonconducting amorphous silicon layer
    • electrical contact
    • TiN
    • IR-91632
    • PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films

    Cite this

    Van Hao, B., Wiggers, F. B., de Jong, M. P., & Kovalgin, A. Y. (2014). An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. In International Conference on Microelectronic Test Structures, ICMTS 2014 (pp. 53-57). USA: IEEE Circuits & Systems Society. https://doi.org/10.1109/ICMTS.2014.6841467
    Van Hao, B. ; Wiggers, Frank Bert ; de Jong, Machiel Pieter ; Kovalgin, Alexeij Y. / An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. International Conference on Microelectronic Test Structures, ICMTS 2014. USA : IEEE Circuits & Systems Society, 2014. pp. 53-57
    @inproceedings{1486977449384ec683bf2bffa846e321,
    title = "An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer",
    abstract = "We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.",
    keywords = "EWI-25006, METIS-306002, in-situ capping layer, ultrathin conducting films, platinum electrodes, silicidation reaction, Pt, Si, Electrical properties, native oxidation, nonconducting amorphous silicon layer, electrical contact, TiN, IR-91632, PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films",
    author = "{Van Hao}, B. and Wiggers, {Frank Bert} and {de Jong}, {Machiel Pieter} and Kovalgin, {Alexeij Y.}",
    note = "10.1109/ICMTS.2014.6841467",
    year = "2014",
    month = "3",
    day = "24",
    doi = "10.1109/ICMTS.2014.6841467",
    language = "Undefined",
    isbn = "978-1-4799-2193-5",
    publisher = "IEEE Circuits & Systems Society",
    pages = "53--57",
    booktitle = "International Conference on Microelectronic Test Structures, ICMTS 2014",

    }

    Van Hao, B, Wiggers, FB, de Jong, MP & Kovalgin, AY 2014, An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. in International Conference on Microelectronic Test Structures, ICMTS 2014. IEEE Circuits & Systems Society, USA, pp. 53-57, 27th International Conference on Microelectronic Test Structures, ICMTS 2014, Udine, Italy, 24/03/14. https://doi.org/10.1109/ICMTS.2014.6841467

    An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. / Van Hao, B.; Wiggers, Frank Bert; de Jong, Machiel Pieter; Kovalgin, Alexeij Y.

    International Conference on Microelectronic Test Structures, ICMTS 2014. USA : IEEE Circuits & Systems Society, 2014. p. 53-57.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

    AU - Van Hao, B.

    AU - Wiggers, Frank Bert

    AU - de Jong, Machiel Pieter

    AU - Kovalgin, Alexeij Y.

    N1 - 10.1109/ICMTS.2014.6841467

    PY - 2014/3/24

    Y1 - 2014/3/24

    N2 - We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.

    AB - We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.

    KW - EWI-25006

    KW - METIS-306002

    KW - in-situ capping layer

    KW - ultrathin conducting films

    KW - platinum electrodes

    KW - silicidation reaction

    KW - Pt

    KW - Si

    KW - Electrical properties

    KW - native oxidation

    KW - nonconducting amorphous silicon layer

    KW - electrical contact

    KW - TiN

    KW - IR-91632

    KW - PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films

    U2 - 10.1109/ICMTS.2014.6841467

    DO - 10.1109/ICMTS.2014.6841467

    M3 - Conference contribution

    SN - 978-1-4799-2193-5

    SP - 53

    EP - 57

    BT - International Conference on Microelectronic Test Structures, ICMTS 2014

    PB - IEEE Circuits & Systems Society

    CY - USA

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    Van Hao B, Wiggers FB, de Jong MP, Kovalgin AY. An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. In International Conference on Microelectronic Test Structures, ICMTS 2014. USA: IEEE Circuits & Systems Society. 2014. p. 53-57 https://doi.org/10.1109/ICMTS.2014.6841467