An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

B. Van Hao, Frank Bert Wiggers, Machiel Pieter de Jong, Alexeij Y. Kovalgin

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)


    We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.
    Original languageUndefined
    Title of host publicationInternational Conference on Microelectronic Test Structures, ICMTS 2014
    Place of PublicationUSA
    PublisherIEEE Circuits & Systems Society
    Number of pages5
    ISBN (Print)978-1-4799-2193-5
    Publication statusPublished - 24 Mar 2014
    Event27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy
    Duration: 24 Mar 201427 Mar 2014
    Conference number: 27

    Publication series

    PublisherIEEE Circuits & Systems Society
    ISSN (Print)1071-9032


    Conference27th International Conference on Microelectronic Test Structures, ICMTS 2014
    Abbreviated titleICMTS
    Internet address


    • EWI-25006
    • METIS-306002
    • in-situ capping layer
    • ultrathin conducting films
    • platinum electrodes
    • silicidation reaction
    • Pt
    • Si
    • Electrical properties
    • native oxidation
    • nonconducting amorphous silicon layer
    • electrical contact
    • TiN
    • IR-91632
    • PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films

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