An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

B. Van Hao, Frank Bert Wiggers, Machiel Pieter de Jong, Alexeij Y. Kovalgin

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.
Original languageUndefined
Title of host publicationInternational Conference on Microelectronic Test Structures, ICMTS 2014
Place of PublicationUSA
PublisherIEEE Circuits & Systems Society
Pages53-57
Number of pages5
ISBN (Print)978-1-4799-2193-5
DOIs
Publication statusPublished - 24 Mar 2014
Event27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy
Duration: 24 Mar 201427 Mar 2014
Conference number: 27
http://www.homepages.ed.ac.uk/ajw/ICMTS/prog14.pdf

Publication series

Name
PublisherIEEE Circuits & Systems Society
ISSN (Print)1071-9032

Conference

Conference27th International Conference on Microelectronic Test Structures, ICMTS 2014
Abbreviated titleICMTS
CountryItaly
CityUdine
Period24/03/1427/03/14
Internet address

Keywords

  • EWI-25006
  • METIS-306002
  • in-situ capping layer
  • ultrathin conducting films
  • platinum electrodes
  • silicidation reaction
  • Pt
  • Si
  • Electrical properties
  • native oxidation
  • nonconducting amorphous silicon layer
  • electrical contact
  • TiN
  • IR-91632
  • PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films

Cite this

Van Hao, B., Wiggers, F. B., de Jong, M. P., & Kovalgin, A. Y. (2014). An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. In International Conference on Microelectronic Test Structures, ICMTS 2014 (pp. 53-57). USA: IEEE Circuits & Systems Society. https://doi.org/10.1109/ICMTS.2014.6841467
Van Hao, B. ; Wiggers, Frank Bert ; de Jong, Machiel Pieter ; Kovalgin, Alexeij Y. / An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. International Conference on Microelectronic Test Structures, ICMTS 2014. USA : IEEE Circuits & Systems Society, 2014. pp. 53-57
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title = "An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer",
abstract = "We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.",
keywords = "EWI-25006, METIS-306002, in-situ capping layer, ultrathin conducting films, platinum electrodes, silicidation reaction, Pt, Si, Electrical properties, native oxidation, nonconducting amorphous silicon layer, electrical contact, TiN, IR-91632, PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films",
author = "{Van Hao}, B. and Wiggers, {Frank Bert} and {de Jong}, {Machiel Pieter} and Kovalgin, {Alexeij Y.}",
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year = "2014",
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doi = "10.1109/ICMTS.2014.6841467",
language = "Undefined",
isbn = "978-1-4799-2193-5",
publisher = "IEEE Circuits & Systems Society",
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booktitle = "International Conference on Microelectronic Test Structures, ICMTS 2014",

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Van Hao, B, Wiggers, FB, de Jong, MP & Kovalgin, AY 2014, An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. in International Conference on Microelectronic Test Structures, ICMTS 2014. IEEE Circuits & Systems Society, USA, pp. 53-57, 27th International Conference on Microelectronic Test Structures, ICMTS 2014, Udine, Italy, 24/03/14. https://doi.org/10.1109/ICMTS.2014.6841467

An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. / Van Hao, B.; Wiggers, Frank Bert; de Jong, Machiel Pieter; Kovalgin, Alexeij Y.

International Conference on Microelectronic Test Structures, ICMTS 2014. USA : IEEE Circuits & Systems Society, 2014. p. 53-57.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

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N2 - We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.

AB - We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.

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KW - METIS-306002

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KW - ultrathin conducting films

KW - platinum electrodes

KW - silicidation reaction

KW - Pt

KW - Si

KW - Electrical properties

KW - native oxidation

KW - nonconducting amorphous silicon layer

KW - electrical contact

KW - TiN

KW - IR-91632

KW - PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films

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DO - 10.1109/ICMTS.2014.6841467

M3 - Conference contribution

SN - 978-1-4799-2193-5

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BT - International Conference on Microelectronic Test Structures, ICMTS 2014

PB - IEEE Circuits & Systems Society

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Van Hao B, Wiggers FB, de Jong MP, Kovalgin AY. An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. In International Conference on Microelectronic Test Structures, ICMTS 2014. USA: IEEE Circuits & Systems Society. 2014. p. 53-57 https://doi.org/10.1109/ICMTS.2014.6841467