An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

B. Van Hao; Frank Bert Wiggers; Machiel Pieter de Jong; Alexeij Y. Kovalgin

doi:10.1109/ICMTS.2014.6841467

An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

B. Van Hao, Frank Bert Wiggers, Machiel Pieter de Jong, Alexeij Y. Kovalgin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

4 Downloads (Pure)

Abstract

We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.

Original language	Undefined
Title of host publication	International Conference on Microelectronic Test Structures, ICMTS 2014
Place of Publication	USA
Publisher	IEEE
Pages	53-57
Number of pages	5
ISBN (Print)	978-1-4799-2193-5
DOIs	https://doi.org/10.1109/ICMTS.2014.6841467
Publication status	Published - 24 Mar 2014
Event	27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy Duration: 24 Mar 2014 → 27 Mar 2014 Conference number: 27 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog14.pdf

Publication series

Name
Publisher	IEEE Circuits & Systems Society
ISSN (Print)	1071-9032

Conference

Conference	27th International Conference on Microelectronic Test Structures, ICMTS 2014
Abbreviated title	ICMTS
Country/Territory	Italy
City	Udine
Period	24/03/14 → 27/03/14
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog14.pdf

Keywords

EWI-25006
METIS-306002
in-situ capping layer
ultrathin conducting films
platinum electrodes
silicidation reaction
Pt
Si
Electrical properties
native oxidation
nonconducting amorphous silicon layer
electrical contact
TiN
IR-91632
PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ICMTS.2014.6841467

http://eprints.eemcs.utwente.nl/secure2/25006/01/ICMTS2014_H_VanBui.pdf

Cite this

@inproceedings{1486977449384ec683bf2bffa846e321,

title = "An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer",

abstract = "We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.",

keywords = "EWI-25006, METIS-306002, in-situ capping layer, ultrathin conducting films, platinum electrodes, silicidation reaction, Pt, Si, Electrical properties, native oxidation, nonconducting amorphous silicon layer, electrical contact, TiN, IR-91632, PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films",

author = "{Van Hao}, B. and Wiggers, {Frank Bert} and {de Jong}, {Machiel Pieter} and Kovalgin, {Alexeij Y.}",

note = "10.1109/ICMTS.2014.6841467 ; 27th International Conference on Microelectronic Test Structures, ICMTS 2014 ; Conference date: 24-03-2014 Through 27-03-2014",

year = "2014",

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day = "24",

doi = "10.1109/ICMTS.2014.6841467",

language = "Undefined",

isbn = "978-1-4799-2193-5",

publisher = "IEEE",

pages = "53--57",

booktitle = "International Conference on Microelectronic Test Structures, ICMTS 2014",

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Van Hao, B, Wiggers, FB, de Jong, MP & Kovalgin, AY 2014, An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. in International Conference on Microelectronic Test Structures, ICMTS 2014. IEEE, USA, pp. 53-57, 27th International Conference on Microelectronic Test Structures, ICMTS 2014, Udine, Italy, 24/03/14. https://doi.org/10.1109/ICMTS.2014.6841467

An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer. / Van Hao, B.; Wiggers, Frank Bert; de Jong, Machiel Pieter et al.
International Conference on Microelectronic Test Structures, ICMTS 2014. USA: IEEE, 2014. p. 53-57.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

AU - Van Hao, B.

AU - Wiggers, Frank Bert

AU - de Jong, Machiel Pieter

AU - Kovalgin, Alexeij Y.

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N2 - We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.

AB - We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes are realized on top of the a-Si. Good electrical contact between TiN and Pt is subsequently obtained by the silicidation reaction of a-Si and Pt at a relatively low temperature.

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KW - METIS-306002

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KW - ultrathin conducting films

KW - platinum electrodes

KW - silicidation reaction

KW - Pt

KW - Si

KW - Electrical properties

KW - native oxidation

KW - nonconducting amorphous silicon layer

KW - electrical contact

KW - TiN

KW - IR-91632

KW - PtSiTiNelectrical contactelectrical propertiesin-situ capping layernative oxidationnonconducting amorphous silicon layerplatinum electrodessilicidation reactionultrathin conducting films

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DO - 10.1109/ICMTS.2014.6841467

M3 - Conference contribution

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BT - International Conference on Microelectronic Test Structures, ICMTS 2014

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