In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.
|Number of pages||4|
|Publication status||Published - 17 Jun 2005|
|Event||14th biennial Conference on Insulating Films on Semiconductors, INFOS 2005 - Leuven, Belgium|
Duration: 22 Jun 2005 → 24 Jun 2005
Conference number: 14