An approach to modeling of silicon oxidation in a wet ultra-diluted ambient

    Research output: Contribution to journalArticleAcademicpeer-review

    6 Citations (Scopus)

    Abstract

    In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.
    Original languageEnglish
    Pages (from-to)432-435
    Number of pages4
    JournalMicroelectronic engineering
    Volume80
    DOIs
    Publication statusPublished - 17 Jun 2005
    Event14th biennial Conference on Insulating Films on Semiconductors, INFOS 2005 - Leuven, Belgium
    Duration: 22 Jun 200524 Jun 2005
    Conference number: 14

    Keywords

    • Tunneling
    • Silicon
    • Oxide
    • Model

    Fingerprint Dive into the research topics of 'An approach to modeling of silicon oxidation in a wet ultra-diluted ambient'. Together they form a unique fingerprint.

    Cite this