An approach to modeling of silicon oxidation in a wet ultra-diluted ambient

    Research output: Contribution to journalArticleAcademicpeer-review

    5 Citations (Scopus)

    Abstract

    In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.
    Original languageUndefined
    Article number10.1016/j.mee.2005.04.101
    Pages (from-to)432-435
    Number of pages4
    JournalMicroelectronic engineering
    Volume80
    Issue number10.1016/j.mee.2005.04.101
    DOIs
    Publication statusPublished - 17 Jun 2005

    Keywords

    • Tunneling
    • Silicon
    • IR-67707
    • Oxide
    • EWI-15501
    • Model

    Cite this

    @article{76f43e880f5f443bb59c0a9e65207546,
    title = "An approach to modeling of silicon oxidation in a wet ultra-diluted ambient",
    abstract = "In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.",
    keywords = "Tunneling, Silicon, IR-67707, Oxide, EWI-15501, Model",
    author = "Kovalgin, {Alexeij Y.} and A.J. Hof and Jurriaan Schmitz",
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    language = "Undefined",
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    }

    An approach to modeling of silicon oxidation in a wet ultra-diluted ambient. / Kovalgin, Alexeij Y.; Hof, A.J.; Schmitz, Jurriaan.

    In: Microelectronic engineering, Vol. 80, No. 10.1016/j.mee.2005.04.101, 10.1016/j.mee.2005.04.101, 17.06.2005, p. 432-435.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - An approach to modeling of silicon oxidation in a wet ultra-diluted ambient

    AU - Kovalgin, Alexeij Y.

    AU - Hof, A.J.

    AU - Schmitz, Jurriaan

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    Y1 - 2005/6/17

    N2 - In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.

    AB - In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.

    KW - Tunneling

    KW - Silicon

    KW - IR-67707

    KW - Oxide

    KW - EWI-15501

    KW - Model

    U2 - 10.1016/j.mee.2005.04.101

    DO - 10.1016/j.mee.2005.04.101

    M3 - Article

    VL - 80

    SP - 432

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    JO - Microelectronic engineering

    JF - Microelectronic engineering

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    M1 - 10.1016/j.mee.2005.04.101

    ER -