An approach to modeling of silicon oxidation in a wet ultra-diluted ambient

    Research output: Contribution to journalArticleAcademicpeer-review

    Original languageUndefined
    Pages (from-to)432-435
    Number of pages4
    JournalMicroelectronic engineering
    Volume80
    Publication statusPublished - 2005

    Keywords

    • METIS-224515

    Cite this

    @article{cd65536060c5409f918ca157e3e2486a,
    title = "An approach to modeling of silicon oxidation in a wet ultra-diluted ambient",
    keywords = "METIS-224515",
    author = "Kovalgin, {Alexeij Y.} and A.J. Hof and Jurriaan Schmitz",
    year = "2005",
    language = "Undefined",
    volume = "80",
    pages = "432--435",
    journal = "Microelectronic engineering",
    issn = "0167-9317",
    publisher = "Elsevier",

    }

    An approach to modeling of silicon oxidation in a wet ultra-diluted ambient. / Kovalgin, Alexeij Y.; Hof, A.J.; Schmitz, Jurriaan.

    In: Microelectronic engineering, Vol. 80, 2005, p. 432-435.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - An approach to modeling of silicon oxidation in a wet ultra-diluted ambient

    AU - Kovalgin, Alexeij Y.

    AU - Hof, A.J.

    AU - Schmitz, Jurriaan

    PY - 2005

    Y1 - 2005

    KW - METIS-224515

    M3 - Article

    VL - 80

    SP - 432

    EP - 435

    JO - Microelectronic engineering

    JF - Microelectronic engineering

    SN - 0167-9317

    ER -