An area-variable MOS varicap and its application in programmable TAP weighting of CCD transversal filters

A.B. Bhattacharyya, Hans Wallinga

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Abstract

A new three-terminal MOS varicap is proposed where the terminal capacitors are made voltage variable not by the modulation of depletion width but by changing the area of inversion under the gate. An MOS capacitor realized on silicon with an impurity gradient along the surface provides the control on the area of inversion because the gate threshold voltage is determined by the doping concentration at the surface. The inhomogeneous doping along the surface is implemented making use of the lateral diffusion from a doped oxide surface. Fabrication details of the capacitor compatible with n-channel silicon gate technology are presented. The C-V relationship for the terminal capacitors is simulated by a piecewise model and agreement with measured results is shown. The Area-Variable MOS Varicap (AVMOSV) is used in implementing an electrically programmable CCD filter with variable TAP weighting. Computer simulation shows considerable promise of area-variable capacitors in TAP weight control and transversal filter realization. Preliminary performance characteristics of a programmable CCD filter are presented.
Original languageUndefined
Pages (from-to)827-833
JournalIEEE transactions on electron devices
Volume29
Issue number5
DOIs
Publication statusPublished - 1982

Keywords

  • IR-56120

Cite this

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title = "An area-variable MOS varicap and its application in programmable TAP weighting of CCD transversal filters",
abstract = "A new three-terminal MOS varicap is proposed where the terminal capacitors are made voltage variable not by the modulation of depletion width but by changing the area of inversion under the gate. An MOS capacitor realized on silicon with an impurity gradient along the surface provides the control on the area of inversion because the gate threshold voltage is determined by the doping concentration at the surface. The inhomogeneous doping along the surface is implemented making use of the lateral diffusion from a doped oxide surface. Fabrication details of the capacitor compatible with n-channel silicon gate technology are presented. The C-V relationship for the terminal capacitors is simulated by a piecewise model and agreement with measured results is shown. The Area-Variable MOS Varicap (AVMOSV) is used in implementing an electrically programmable CCD filter with variable TAP weighting. Computer simulation shows considerable promise of area-variable capacitors in TAP weight control and transversal filter realization. Preliminary performance characteristics of a programmable CCD filter are presented.",
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author = "A.B. Bhattacharyya and Hans Wallinga",
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An area-variable MOS varicap and its application in programmable TAP weighting of CCD transversal filters. / Bhattacharyya, A.B.; Wallinga, Hans.

In: IEEE transactions on electron devices, Vol. 29, No. 5, 1982, p. 827-833.

Research output: Contribution to journalArticleAcademic

TY - JOUR

T1 - An area-variable MOS varicap and its application in programmable TAP weighting of CCD transversal filters

AU - Bhattacharyya, A.B.

AU - Wallinga, Hans

PY - 1982

Y1 - 1982

N2 - A new three-terminal MOS varicap is proposed where the terminal capacitors are made voltage variable not by the modulation of depletion width but by changing the area of inversion under the gate. An MOS capacitor realized on silicon with an impurity gradient along the surface provides the control on the area of inversion because the gate threshold voltage is determined by the doping concentration at the surface. The inhomogeneous doping along the surface is implemented making use of the lateral diffusion from a doped oxide surface. Fabrication details of the capacitor compatible with n-channel silicon gate technology are presented. The C-V relationship for the terminal capacitors is simulated by a piecewise model and agreement with measured results is shown. The Area-Variable MOS Varicap (AVMOSV) is used in implementing an electrically programmable CCD filter with variable TAP weighting. Computer simulation shows considerable promise of area-variable capacitors in TAP weight control and transversal filter realization. Preliminary performance characteristics of a programmable CCD filter are presented.

AB - A new three-terminal MOS varicap is proposed where the terminal capacitors are made voltage variable not by the modulation of depletion width but by changing the area of inversion under the gate. An MOS capacitor realized on silicon with an impurity gradient along the surface provides the control on the area of inversion because the gate threshold voltage is determined by the doping concentration at the surface. The inhomogeneous doping along the surface is implemented making use of the lateral diffusion from a doped oxide surface. Fabrication details of the capacitor compatible with n-channel silicon gate technology are presented. The C-V relationship for the terminal capacitors is simulated by a piecewise model and agreement with measured results is shown. The Area-Variable MOS Varicap (AVMOSV) is used in implementing an electrically programmable CCD filter with variable TAP weighting. Computer simulation shows considerable promise of area-variable capacitors in TAP weight control and transversal filter realization. Preliminary performance characteristics of a programmable CCD filter are presented.

KW - IR-56120

U2 - 10.1109/T-ED.1982.20785

DO - 10.1109/T-ED.1982.20785

M3 - Article

VL - 29

SP - 827

EP - 833

JO - IEEE transactions on electron devices

JF - IEEE transactions on electron devices

SN - 0018-9383

IS - 5

ER -