An electret-based pressure sensitive MOS transistor

J.A. Voorthuyzen; P. Bergveld

doi:10.1109/ISE.1988.38634

An electret-based pressure sensitive MOS transistor

J.A. Voorthuyzen, P. Bergveld

Research output: Contribution to conference › Paper › Academic

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Abstract

The operation of the MOSFET is based on the fact that the lateral conductivity of silicon at the silicon-dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between the metal gate and the oxide, and applying a voltage across the insulator on top of the silicon, the lateral conductivity can become pressure sensitive. The generation of the electric field in the insulator can also be provided by means of an electret. The theory, realization, and performance of an integrated electret-MOSFET-based pressure sensor are presented

Original language	English
Pages	587-591
DOIs	https://doi.org/10.1109/ISE.1988.38634
Publication status	Published - 1988
Event	6th International Symposium on Electrets, ISE 1988 - Oxford, United Kingdom Duration: 1 Sep 1988 → 3 Sep 1988 Conference number: 6

Conference

Conference	6th International Symposium on Electrets, ISE 1988
Abbreviated title	ISE
Country/Territory	United Kingdom
City	Oxford
Period	1/09/88 → 3/09/88

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10.1109/ISE.1988.38634

Voorthuyzen1988electret-basedFinal published version, 215 KB

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title = "An electret-based pressure sensitive MOS transistor",

abstract = "The operation of the MOSFET is based on the fact that the lateral conductivity of silicon at the silicon-dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between the metal gate and the oxide, and applying a voltage across the insulator on top of the silicon, the lateral conductivity can become pressure sensitive. The generation of the electric field in the insulator can also be provided by means of an electret. The theory, realization, and performance of an integrated electret-MOSFET-based pressure sensor are presented",

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year = "1988",

doi = "10.1109/ISE.1988.38634",

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AU - Voorthuyzen, J.A.

AU - Bergveld, P.

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PY - 1988

Y1 - 1988

N2 - The operation of the MOSFET is based on the fact that the lateral conductivity of silicon at the silicon-dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between the metal gate and the oxide, and applying a voltage across the insulator on top of the silicon, the lateral conductivity can become pressure sensitive. The generation of the electric field in the insulator can also be provided by means of an electret. The theory, realization, and performance of an integrated electret-MOSFET-based pressure sensor are presented

AB - The operation of the MOSFET is based on the fact that the lateral conductivity of silicon at the silicon-dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between the metal gate and the oxide, and applying a voltage across the insulator on top of the silicon, the lateral conductivity can become pressure sensitive. The generation of the electric field in the insulator can also be provided by means of an electret. The theory, realization, and performance of an integrated electret-MOSFET-based pressure sensor are presented

U2 - 10.1109/ISE.1988.38634

DO - 10.1109/ISE.1988.38634

M3 - Paper

SP - 587

EP - 591

T2 - 6th International Symposium on Electrets, ISE 1988

Y2 - 1 September 1988 through 3 September 1988

ER -

An electret-based pressure sensitive MOS transistor

Abstract

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