An electret-based pressure sensitive MOS transistor

J.A. Voorthuyzen, P. Bergveld

    Research output: Contribution to conferencePaper

    1 Citation (Scopus)
    66 Downloads (Pure)

    Abstract

    The operation of the MOSFET is based on the fact that the lateral conductivity of silicon at the silicon-dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between the metal gate and the oxide, and applying a voltage across the insulator on top of the silicon, the lateral conductivity can become pressure sensitive. The generation of the electric field in the insulator can also be provided by means of an electret. The theory, realization, and performance of an integrated electret-MOSFET-based pressure sensor are presented
    Original languageEnglish
    Pages587-591
    DOIs
    Publication statusPublished - 1988
    Event6th International Symposium on Electrets, ISE 1988 - Oxford, United Kingdom
    Duration: 1 Sep 19883 Sep 1988
    Conference number: 6

    Conference

    Conference6th International Symposium on Electrets, ISE 1988
    Abbreviated titleISE
    CountryUnited Kingdom
    CityOxford
    Period1/09/883/09/88

    Fingerprint Dive into the research topics of 'An electret-based pressure sensitive MOS transistor'. Together they form a unique fingerprint.

  • Cite this

    Voorthuyzen, J. A., & Bergveld, P. (1988). An electret-based pressure sensitive MOS transistor. 587-591. Paper presented at 6th International Symposium on Electrets, ISE 1988, Oxford, United Kingdom. https://doi.org/10.1109/ISE.1988.38634