An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

M. Chefdeville, M.A. Chefdeville, P. Colas, Y. Giomataris, H. van der Graaf, E.H.M. Heijne, S. van der Putten, Cora Salm, Jurriaan Schmitz, Sander M. Smits, J. Timmermans, J.L. Visschers

Research output: Contribution to conferencePaperAcademic

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Abstract

A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
Original languageUndefined
Pages139-142
Number of pages4
Publication statusPublished - Nov 2005
Event8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands
Duration: 17 Nov 200518 Nov 2005
Conference number: 8

Workshop

Workshop8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
Abbreviated titleSAFE
CountryNetherlands
CityVeldhoven
Period17/11/0518/11/05

Keywords

  • microelectrodes
  • Microsensors
  • Terms—Electron gas multiplication
  • Wafer post-processing
  • integrated grid
  • IR-59596
  • MICROMEGAS
  • SU-8
  • EWI-15513
  • wafer-scale integration
  • SC-CICC: Characterization of IC Components

Cite this

Chefdeville, M., Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., ... Visschers, J. L. (2005). An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. 139-142. Paper presented at 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands.
Chefdeville, M. ; Chefdeville, M.A. ; Colas, P. ; Giomataris, Y. ; van der Graaf, H. ; Heijne, E.H.M. ; van der Putten, S. ; Salm, Cora ; Schmitz, Jurriaan ; Smits, Sander M. ; Timmermans, J. ; Visschers, J.L. / An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. Paper presented at 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands.4 p.
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title = "An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology",
abstract = "A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.",
keywords = "microelectrodes, Microsensors, Terms—Electron gas multiplication, Wafer post-processing, integrated grid, IR-59596, MICROMEGAS, SU-8, EWI-15513, wafer-scale integration, SC-CICC: Characterization of IC Components",
author = "M. Chefdeville and M.A. Chefdeville and P. Colas and Y. Giomataris and {van der Graaf}, H. and E.H.M. Heijne and {van der Putten}, S. and Cora Salm and Jurriaan Schmitz and Smits, {Sander M.} and J. Timmermans and J.L. Visschers",
year = "2005",
month = "11",
language = "Undefined",
pages = "139--142",
note = "null ; Conference date: 17-11-2005 Through 18-11-2005",

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Chefdeville, M, Chefdeville, MA, Colas, P, Giomataris, Y, van der Graaf, H, Heijne, EHM, van der Putten, S, Salm, C, Schmitz, J, Smits, SM, Timmermans, J & Visschers, JL 2005, 'An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology' Paper presented at 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands, 17/11/05 - 18/11/05, pp. 139-142.

An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. / Chefdeville, M.; Chefdeville, M.A.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Heijne, E.H.M.; van der Putten, S.; Salm, Cora; Schmitz, Jurriaan; Smits, Sander M.; Timmermans, J.; Visschers, J.L.

2005. 139-142 Paper presented at 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands.

Research output: Contribution to conferencePaperAcademic

TY - CONF

T1 - An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

AU - Chefdeville, M.

AU - Chefdeville, M.A.

AU - Colas, P.

AU - Giomataris, Y.

AU - van der Graaf, H.

AU - Heijne, E.H.M.

AU - van der Putten, S.

AU - Salm, Cora

AU - Schmitz, Jurriaan

AU - Smits, Sander M.

AU - Timmermans, J.

AU - Visschers, J.L.

PY - 2005/11

Y1 - 2005/11

N2 - A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

AB - A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

KW - microelectrodes

KW - Microsensors

KW - Terms—Electron gas multiplication

KW - Wafer post-processing

KW - integrated grid

KW - IR-59596

KW - MICROMEGAS

KW - SU-8

KW - EWI-15513

KW - wafer-scale integration

KW - SC-CICC: Characterization of IC Components

M3 - Paper

SP - 139

EP - 142

ER -

Chefdeville M, Chefdeville MA, Colas P, Giomataris Y, van der Graaf H, Heijne EHM et al. An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. 2005. Paper presented at 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands.