An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

M.A. Chefdeville, P. Colas, Y. Giomataris, H. van der Graaf, E.H.M. Heijne, Sipho van der Putten, C. Salm, J. Schmitz, S. Smits, J. Timmermans, J.L. Visschers

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    Abstract

    A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
    Original languageEnglish
    Pages (from-to)490-494
    Number of pages5
    JournalNuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment
    Volume556
    Issue number2
    DOIs
    Publication statusPublished - 3 Dec 2005

    Keywords

    • SC-RID: Radiation Imaging detectors
    • Electron gas multiplication
    • Micromegas
    • Integrated grid
    • Wafer post-processing
    • Microelectrodes
    • Microsensors
    • Wafer-scale integration
    • SU-8
    • 22/4 OA procedure

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    • An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

      Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., van der Putten, S., Salm, C., Schmitz, J., Smits, S. M., Timmermans, J. & Visschers, J. L., Nov 2005, Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands: STW, p. 139-142 4 p.

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