An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

M.A. Chefdeville, P. Colas, Y. Giomataris, H. van der Graaf, E.H.M. Heijne, S. van der Putten, C. Salm, J. Schmitz, S. Smits, J. Timmermans, J. Timmermans, J.L. Visschers

    Research output: Contribution to journalArticleAcademicpeer-review

    71 Citations (Scopus)

    Abstract

    A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
    Original languageEnglish
    Article number10.1016/j.nima.2005.11.065
    Pages (from-to)490-494
    Number of pages5
    JournalNuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment
    Volume556
    Issue number2
    DOIs
    Publication statusPublished - 3 Dec 2005

    Keywords

    • SC-RID: Radiation Imaging detectors
    • Electron gas multiplication
    • Micromegas
    • Integrated grid
    • Wafer post-processing
    • Microelectrodes
    • Microsensors
    • Wafer-scale integration
    • SU-8

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