An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

M.A. Chefdeville; P. Colas; Y. Giomataris; H. van der Graaf; E.H.M. Heijne; Sipho van der Putten; C. Salm; J. Schmitz; S. Smits; J. Timmermans; J.L. Visschers

doi:10.1016/j.nima.2005.11.065

An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

M.A. Chefdeville, P. Colas, Y. Giomataris, H. van der Graaf, E.H.M. Heijne, Sipho van der Putten, C. Salm, J. Schmitz, S. Smits, J. Timmermans, J.L. Visschers

Research output: Contribution to journal › Article › Academic › peer-review

78 Citations (Scopus)

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Abstract

A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

Original language	English
Pages (from-to)	490-494
Number of pages	5
Journal	Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment
Volume	556
Issue number	2
DOIs	https://doi.org/10.1016/j.nima.2005.11.065
Publication status	Published - 3 Dec 2005

Keywords

SC-RID: Radiation Imaging detectors
Electron gas multiplication
Micromegas
Integrated grid
Wafer post-processing
Microelectrodes
Microsensors
Wafer-scale integration
SU-8
22/4 OA procedure

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10.1016/j.nima.2005.11.065

Chefdeville2006electronFinal published version, 377 KBLicence: Taverne

78 Citations
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An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology
Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., van der Putten, S., Salm, C., Schmitz, J., Smits, S. M., Timmermans, J. & Visschers, J. L., Nov 2005, Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands: STW, p. 139-142 4 p.
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Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., van der Putten, S., Salm, C., Schmitz, J., Smits, S., Timmermans, J., & Visschers, J. L. (2005). An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology. Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment, 556(2), 490-494. https://doi.org/10.1016/j.nima.2005.11.065

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abstract = "A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.",

keywords = "SC-RID: Radiation Imaging detectors, Electron gas multiplication, Micromegas, Integrated grid, Wafer post-processing, Microelectrodes, Microsensors, Wafer-scale integration, SU-8, 22/4 OA procedure",

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Chefdeville, MA, Colas, P, Giomataris, Y, van der Graaf, H, Heijne, EHM, van der Putten, S, Salm, C , Schmitz, J , Smits, S, Timmermans, J & Visschers, JL 2005, 'An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology', Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment, vol. 556, no. 2, pp. 490-494. https://doi.org/10.1016/j.nima.2005.11.065

An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology. / Chefdeville, M.A.; Colas, P.; Giomataris, Y. et al.
In: Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment, Vol. 556, No. 2, 03.12.2005, p. 490-494.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

AU - Chefdeville, M.A.

AU - Colas, P.

AU - Giomataris, Y.

AU - van der Graaf, H.

AU - Heijne, E.H.M.

AU - van der Putten, Sipho

AU - Salm, C.

AU - Schmitz, J.

AU - Smits, S.

AU - Timmermans, J.

AU - Visschers, J.L.

PY - 2005/12/3

Y1 - 2005/12/3

N2 - A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

AB - A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

KW - SC-RID: Radiation Imaging detectors

KW - Electron gas multiplication

KW - Micromegas

KW - Integrated grid

KW - Wafer post-processing

KW - Microelectrodes

KW - Microsensors

KW - Wafer-scale integration

KW - SU-8

KW - 22/4 OA procedure

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DO - 10.1016/j.nima.2005.11.065

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JO - Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment

JF - Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment

IS - 2

ER -

Chefdeville MA, Colas P, Giomataris Y, van der Graaf H, Heijne EHM, van der Putten S et al. An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology. Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment. 2005 Dec 3;556(2):490-494. doi: 10.1016/j.nima.2005.11.065

An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

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An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

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