An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

M.A. Chefdeville, P. Colas, Y. Giomataris, H. van der Graaf, E.H.M. Heijne, S. van der Putten, Cora Salm, Jurriaan Schmitz, Sander M. Smits, J. Timmermans, J. Timmermans, J.L. Visschers

    Research output: Contribution to journalArticleAcademicpeer-review

    68 Citations (Scopus)

    Abstract

    A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
    Original languageUndefined
    Article number10.1016/j.nima.2005.11.065
    Pages (from-to)490-494
    Number of pages5
    JournalNuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment
    Volume556
    Issue number2
    DOIs
    Publication statusPublished - 3 Dec 2005

    Keywords

    • SC-RID: Radiation Imaging detectors
    • IR-62908
    • METIS-248085
    • EWI-3745

    Cite this

    Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., van der Putten, S., ... Visschers, J. L. (2005). An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology. Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment, 556(2), 490-494. [10.1016/j.nima.2005.11.065]. https://doi.org/10.1016/j.nima.2005.11.065
    Chefdeville, M.A. ; Colas, P. ; Giomataris, Y. ; van der Graaf, H. ; Heijne, E.H.M. ; van der Putten, S. ; Salm, Cora ; Schmitz, Jurriaan ; Smits, Sander M. ; Timmermans, J. ; Timmermans, J. ; Visschers, J.L. / An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology. In: Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment. 2005 ; Vol. 556, No. 2. pp. 490-494.
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    abstract = "A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.",
    keywords = "SC-RID: Radiation Imaging detectors, IR-62908, METIS-248085, EWI-3745",
    author = "M.A. Chefdeville and P. Colas and Y. Giomataris and {van der Graaf}, H. and E.H.M. Heijne and {van der Putten}, S. and Cora Salm and Jurriaan Schmitz and Smits, {Sander M.} and J. Timmermans and J. Timmermans and J.L. Visschers",
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    year = "2005",
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    Chefdeville, MA, Colas, P, Giomataris, Y, van der Graaf, H, Heijne, EHM, van der Putten, S, Salm, C, Schmitz, J, Smits, SM, Timmermans, J, Timmermans, J & Visschers, JL 2005, 'An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology', Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment, vol. 556, no. 2, 10.1016/j.nima.2005.11.065, pp. 490-494. https://doi.org/10.1016/j.nima.2005.11.065

    An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology. / Chefdeville, M.A.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Heijne, E.H.M.; van der Putten, S.; Salm, Cora; Schmitz, Jurriaan; Smits, Sander M.; Timmermans, J.; Timmermans, J.; Visschers, J.L.

    In: Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment, Vol. 556, No. 2, 10.1016/j.nima.2005.11.065, 03.12.2005, p. 490-494.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - An electron-multiplying ''Micromegas'' grid made in silicon wafer post-processing technology

    AU - Chefdeville, M.A.

    AU - Colas, P.

    AU - Giomataris, Y.

    AU - van der Graaf, H.

    AU - Heijne, E.H.M.

    AU - van der Putten, S.

    AU - Salm, Cora

    AU - Schmitz, Jurriaan

    AU - Smits, Sander M.

    AU - Timmermans, J.

    AU - Timmermans, J.

    AU - Visschers, J.L.

    N1 - 10.1016/j.nima.2005.11.065

    PY - 2005/12/3

    Y1 - 2005/12/3

    N2 - A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

    AB - A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

    KW - SC-RID: Radiation Imaging detectors

    KW - IR-62908

    KW - METIS-248085

    KW - EWI-3745

    U2 - 10.1016/j.nima.2005.11.065

    DO - 10.1016/j.nima.2005.11.065

    M3 - Article

    VL - 556

    SP - 490

    EP - 494

    JO - Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment

    JF - Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment

    SN - 0168-9002

    IS - 2

    M1 - 10.1016/j.nima.2005.11.065

    ER -