Abstract
A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
Original language | English |
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Title of host publication | Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 |
Place of Publication | Veldhoven, The Netherlands |
Publisher | STW |
Pages | 139-142 |
Number of pages | 4 |
ISBN (Print) | 90-73461-50-2 |
Publication status | Published - Nov 2005 |
Event | 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands Duration: 17 Nov 2005 → 18 Nov 2005 Conference number: 8 |
Workshop
Workshop | 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 |
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Abbreviated title | SAFE |
Country/Territory | Netherlands |
City | Veldhoven |
Period | 17/11/05 → 18/11/05 |
Keywords
- Microelectrode
- Microsensors
- Terms—Electron gas multiplication
- Wafer post-processing
- Integrated grid
- MICROMEGAS
- SU-8
- Wafer-scale integration
- SC-CICC: Characterization of IC Components