An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

M.A. Chefdeville; P. Colas; Y. Giomataris; H. van der Graaf; E.H.M. Heijne; S. van der Putten; Cora Salm; Jurriaan Schmitz; Sander M. Smits; J. Timmermans; J.L. Visschers

An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

M.A. Chefdeville, P. Colas, Y. Giomataris, H. van der Graaf, E.H.M. Heijne, S. van der Putten, Cora Salm, Jurriaan Schmitz, Sander M. Smits, J. Timmermans, J.L. Visschers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

Original language	English
Title of host publication	Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005
Place of Publication	Veldhoven, The Netherlands
Publisher	STW
Pages	139-142
Number of pages	4
ISBN (Print)	90-73461-50-2
Publication status	Published - Nov 2005
Event	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands Duration: 17 Nov 2005 → 18 Nov 2005 Conference number: 8

Workshop

Workshop	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
Abbreviated title	SAFE
Country	Netherlands
City	Veldhoven
Period	17/11/05 → 18/11/05

Keywords

Microelectrode
Microsensors
Terms—Electron gas multiplication
Wafer post-processing
Integrated grid
MICROMEGAS
SU-8
Wafer-scale integration
SC-CICC: Characterization of IC Components

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Chefdeville, M. A., Colas, P., Giomataris, Y., van der Graaf, H., Heijne, E. H. M., van der Putten, S., Salm, C., Schmitz, J., Smits, S. M., Timmermans, J., & Visschers, J. L. (2005). An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. In Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (pp. 139-142). STW.

Chefdeville, M.A. ; Colas, P. ; Giomataris, Y. ; van der Graaf, H. ; Heijne, E.H.M. ; van der Putten, S. ; Salm, Cora ; Schmitz, Jurriaan ; Smits, Sander M. ; Timmermans, J. ; Visschers, J.L. / An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands : STW, 2005. pp. 139-142

@inproceedings{8688543006304d44b3620bf3dcb34691,

title = "An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology",

abstract = "A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.",

keywords = "Microelectrode, Microsensors, Terms—Electron gas multiplication, Wafer post-processing, Integrated grid, MICROMEGAS, SU-8, Wafer-scale integration, SC-CICC: Characterization of IC Components",

author = "M.A. Chefdeville and P. Colas and Y. Giomataris and {van der Graaf}, H. and E.H.M. Heijne and {van der Putten}, S. and Cora Salm and Jurriaan Schmitz and Smits, {Sander M.} and J. Timmermans and J.L. Visschers",

year = "2005",

month = nov,

language = "English",

isbn = "90-73461-50-2",

pages = "139--142",

booktitle = "Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005",

publisher = "STW",

note = "8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, SAFE ; Conference date: 17-11-2005 Through 18-11-2005",

}

Chefdeville, MA, Colas, P, Giomataris, Y, van der Graaf, H, Heijne, EHM, van der Putten, S, Salm, C , Schmitz, J , Smits, SM, Timmermans, J & Visschers, JL 2005, An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. in Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. STW, Veldhoven, The Netherlands, pp. 139-142, 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands, 17/11/05.

An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. / Chefdeville, M.A.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Heijne, E.H.M.; van der Putten, S.; Salm, Cora ; Schmitz, Jurriaan ; Smits, Sander M.; Timmermans, J.; Visschers, J.L.

Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands : STW, 2005. p. 139-142.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology

AU - Chefdeville, M.A.

AU - Colas, P.

AU - Giomataris, Y.

AU - van der Graaf, H.

AU - Heijne, E.H.M.

AU - van der Putten, S.

AU - Salm, Cora

AU - Schmitz, Jurriaan

AU - Smits, Sander M.

AU - Timmermans, J.

AU - Visschers, J.L.

N1 - Conference code: 8

PY - 2005/11

Y1 - 2005/11

N2 - A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

AB - A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.

KW - Microelectrode

KW - Microsensors

KW - Terms—Electron gas multiplication

KW - Wafer post-processing

KW - Integrated grid

KW - MICROMEGAS

KW - SU-8

KW - Wafer-scale integration

KW - SC-CICC: Characterization of IC Components

M3 - Conference contribution

SN - 90-73461-50-2

SP - 139

EP - 142

BT - Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005

PB - STW

CY - Veldhoven, The Netherlands

T2 - 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005

Y2 - 17 November 2005 through 18 November 2005

ER -