An ellipsometric and RBS study of TiSi2 formation

J.M.M. de Nijs; A. van Silfhout

doi:10.1016/0921-5107(90)90076-N

An ellipsometric and RBS study of TiSi₂ formation

J.M.M. de Nijs, A. van Silfhout

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Abstract

Thin (about 10 nm) titanium layers have been grown on clean Si(111) surfaces inside a UHV system and subsequently heated. The Ti-Si solid state reaction initiated is followed by three-wavelength ellipsometry. Successively we observed two metastable phases at about 350 and 450 °C (states I and II) prior to a final transition at about 700 °C (state III).The as-deposited layers, the intermediate states I and II, and the final state III have been characterized by means of spectroscopic ellipsometry (E = 2.0−4.5 eV). Analysis of state I reveals an inhomogeneous, probably silicon-enriched monosilicide. State II is again homogeneous and it has an almost stoichiometric composition of TiSi2. Most probably it is the C49 disilicide phase. Optical analysis of the final state III reveals a thick layer of C54 TiSi2 islands containing 20%–25% c-Si precipitates.Reference samples identical to states I, II and III were made and investigated by Rutherford backscattering spectroscopy. Both thickness and composition results obtained from these measurements fully support the results of the ellipsometrical study.

Original language	English
Pages (from-to)	319-323
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	5
Issue number	2
DOIs	https://doi.org/10.1016/0921-5107(90)90076-N
Publication status	Published - 1990

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title = "An ellipsometric and RBS study of TiSi2 formation",

abstract = "Thin (about 10 nm) titanium layers have been grown on clean Si(111) surfaces inside a UHV system and subsequently heated. The Ti-Si solid state reaction initiated is followed by three-wavelength ellipsometry. Successively we observed two metastable phases at about 350 and 450 °C (states I and II) prior to a final transition at about 700 °C (state III).The as-deposited layers, the intermediate states I and II, and the final state III have been characterized by means of spectroscopic ellipsometry (E = 2.0−4.5 eV). Analysis of state I reveals an inhomogeneous, probably silicon-enriched monosilicide. State II is again homogeneous and it has an almost stoichiometric composition of TiSi2. Most probably it is the C49 disilicide phase. Optical analysis of the final state III reveals a thick layer of C54 TiSi2 islands containing 20%–25% c-Si precipitates.Reference samples identical to states I, II and III were made and investigated by Rutherford backscattering spectroscopy. Both thickness and composition results obtained from these measurements fully support the results of the ellipsometrical study.",

author = "{de Nijs}, J.M.M. and {van Silfhout}, A.",

year = "1990",

doi = "10.1016/0921-5107(90)90076-N",

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T1 - An ellipsometric and RBS study of TiSi2 formation

AU - de Nijs, J.M.M.

AU - van Silfhout, A.

PY - 1990

Y1 - 1990

N2 - Thin (about 10 nm) titanium layers have been grown on clean Si(111) surfaces inside a UHV system and subsequently heated. The Ti-Si solid state reaction initiated is followed by three-wavelength ellipsometry. Successively we observed two metastable phases at about 350 and 450 °C (states I and II) prior to a final transition at about 700 °C (state III).The as-deposited layers, the intermediate states I and II, and the final state III have been characterized by means of spectroscopic ellipsometry (E = 2.0−4.5 eV). Analysis of state I reveals an inhomogeneous, probably silicon-enriched monosilicide. State II is again homogeneous and it has an almost stoichiometric composition of TiSi2. Most probably it is the C49 disilicide phase. Optical analysis of the final state III reveals a thick layer of C54 TiSi2 islands containing 20%–25% c-Si precipitates.Reference samples identical to states I, II and III were made and investigated by Rutherford backscattering spectroscopy. Both thickness and composition results obtained from these measurements fully support the results of the ellipsometrical study.

AB - Thin (about 10 nm) titanium layers have been grown on clean Si(111) surfaces inside a UHV system and subsequently heated. The Ti-Si solid state reaction initiated is followed by three-wavelength ellipsometry. Successively we observed two metastable phases at about 350 and 450 °C (states I and II) prior to a final transition at about 700 °C (state III).The as-deposited layers, the intermediate states I and II, and the final state III have been characterized by means of spectroscopic ellipsometry (E = 2.0−4.5 eV). Analysis of state I reveals an inhomogeneous, probably silicon-enriched monosilicide. State II is again homogeneous and it has an almost stoichiometric composition of TiSi2. Most probably it is the C49 disilicide phase. Optical analysis of the final state III reveals a thick layer of C54 TiSi2 islands containing 20%–25% c-Si precipitates.Reference samples identical to states I, II and III were made and investigated by Rutherford backscattering spectroscopy. Both thickness and composition results obtained from these measurements fully support the results of the ellipsometrical study.

U2 - 10.1016/0921-5107(90)90076-N

DO - 10.1016/0921-5107(90)90076-N

M3 - Article

SN - 0921-5107

VL - 5

SP - 319

EP - 323

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 2

ER -

An ellipsometric and RBS study of TiSi2 formation

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An ellipsometric and RBS study of TiSi₂ formation