An empirical model for early resistance changes due to electromigration

J. Niehof; J. Niehof; H.C. de Graaff; H.C. de Graaff; A.J. Mouthaan; J.F. Verweij; J.F. Verweij

doi:10.1016/0038-1101(94)00285-N

An empirical model for early resistance changes due to electromigration

J. Niehof, J. Niehof, H.C. de Graaff, H.C. de Graaff, A.J. Mouthaan, J.F. Verweij, J.F. Verweij

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Abstract

A new heuristic description for electromigration-induced early resistance changes is given. The basis is formed by two coupled partial differential equations, one for vacancies, and one for imperfections. These equations are solved numerically for a grain boundary bamboo structure. It is shown that this model is capable of simulating the typical effects as observed in early resistance change measurements. These early resistance changes are due to the redistributions of the vacancies and the generation of imperfections. Simulations are performed that closely match the measured resistance change curves.

Original language	Undefined
Pages (from-to)	1817-1827
Journal	Solid-state electronics
Volume	38
Issue number	10
DOIs	https://doi.org/10.1016/0038-1101(94)00285-N
Publication status	Published - 1995

Keywords

METIS-112047
IR-15173

Access to Document

10.1016/0038-1101(94)00285-N

Niehof95empirical
open

Cite this

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title = "An empirical model for early resistance changes due to electromigration",

abstract = "A new heuristic description for electromigration-induced early resistance changes is given. The basis is formed by two coupled partial differential equations, one for vacancies, and one for imperfections. These equations are solved numerically for a grain boundary bamboo structure. It is shown that this model is capable of simulating the typical effects as observed in early resistance change measurements. These early resistance changes are due to the redistributions of the vacancies and the generation of imperfections. Simulations are performed that closely match the measured resistance change curves.",

keywords = "METIS-112047, IR-15173",

author = "J. Niehof and J. Niehof and {de Graaff}, H.C. and {de Graaff}, H.C. and A.J. Mouthaan and J.F. Verweij and J.F. Verweij",

year = "1995",

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T1 - An empirical model for early resistance changes due to electromigration

AU - Niehof, J.

AU - de Graaff, H.C.

AU - Mouthaan, A.J.

AU - Verweij, J.F.

PY - 1995

Y1 - 1995

N2 - A new heuristic description for electromigration-induced early resistance changes is given. The basis is formed by two coupled partial differential equations, one for vacancies, and one for imperfections. These equations are solved numerically for a grain boundary bamboo structure. It is shown that this model is capable of simulating the typical effects as observed in early resistance change measurements. These early resistance changes are due to the redistributions of the vacancies and the generation of imperfections. Simulations are performed that closely match the measured resistance change curves.

AB - A new heuristic description for electromigration-induced early resistance changes is given. The basis is formed by two coupled partial differential equations, one for vacancies, and one for imperfections. These equations are solved numerically for a grain boundary bamboo structure. It is shown that this model is capable of simulating the typical effects as observed in early resistance change measurements. These early resistance changes are due to the redistributions of the vacancies and the generation of imperfections. Simulations are performed that closely match the measured resistance change curves.

KW - METIS-112047

KW - IR-15173

U2 - 10.1016/0038-1101(94)00285-N

DO - 10.1016/0038-1101(94)00285-N

M3 - Article

VL - 38

SP - 1817

EP - 1827

JO - Solid-state electronics

JF - Solid-state electronics

SN - 0038-1101

IS - 10

ER -