An experimental view on PureB silicon photodiode device physics

L. K. Nanver*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    2 Downloads (Pure)

    Abstract

    PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.

    Original languageEnglish
    Title of host publication2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings
    PublisherIEEE
    Number of pages6
    ISBN (Electronic)9789532330977
    ISBN (Print)978-1-5386-3777-7
    DOIs
    Publication statusPublished - 28 Jun 2018
    Event41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Opatija, Croatia
    Duration: 21 May 201825 May 2018
    Conference number: 41

    Conference

    Conference41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018
    Abbreviated titleMIPRO
    CountryCroatia
    CityOpatija
    Period21/05/1825/05/18

    Keywords

    • chemical vapor deposition
    • laser annealing
    • photodiodes
    • pure boron
    • silicon

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  • Cite this

    Nanver, L. K. (2018). An experimental view on PureB silicon photodiode device physics. In 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings IEEE. https://doi.org/10.23919/MIPRO.2018.8399820