An experimental view on PureB silicon photodiode device physics

L. K. Nanver*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    2 Downloads (Pure)

    Abstract

    PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.

    Original languageEnglish
    Title of host publication2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings
    PublisherIEEE
    Number of pages6
    ISBN (Electronic)9789532330977
    ISBN (Print)978-1-5386-3777-7
    DOIs
    Publication statusPublished - 28 Jun 2018
    Event41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Opatija, Croatia
    Duration: 21 May 201825 May 2018
    Conference number: 41

    Conference

    Conference41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018
    Abbreviated titleMIPRO
    CountryCroatia
    CityOpatija
    Period21/05/1825/05/18

    Fingerprint

    Photodiodes
    Boron
    Physics
    Silicon
    Diodes
    Dark currents
    Processing
    Experiments
    Doping (additives)
    Annealing
    Temperature
    Lasers

    Keywords

    • chemical vapor deposition
    • laser annealing
    • photodiodes
    • pure boron
    • silicon

    Cite this

    Nanver, L. K. (2018). An experimental view on PureB silicon photodiode device physics. In 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings IEEE. https://doi.org/10.23919/MIPRO.2018.8399820
    Nanver, L. K. / An experimental view on PureB silicon photodiode device physics. 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 2018.
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    title = "An experimental view on PureB silicon photodiode device physics",
    abstract = "PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.",
    keywords = "chemical vapor deposition, laser annealing, photodiodes, pure boron, silicon",
    author = "Nanver, {L. K.}",
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    Nanver, LK 2018, An experimental view on PureB silicon photodiode device physics. in 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018, Opatija, Croatia, 21/05/18. https://doi.org/10.23919/MIPRO.2018.8399820

    An experimental view on PureB silicon photodiode device physics. / Nanver, L. K.

    2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 2018.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    N2 - PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.

    AB - PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.

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    Nanver LK. An experimental view on PureB silicon photodiode device physics. In 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE. 2018 https://doi.org/10.23919/MIPRO.2018.8399820