An experimental view on PureB silicon photodiode device physics

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
1 Downloads (Pure)

Abstract

PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.

Original languageEnglish
Title of host publication2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings
PublisherIEEE
Number of pages6
ISBN (Electronic)9789532330977
ISBN (Print)978-1-5386-3777-7
DOIs
Publication statusPublished - 28 Jun 2018
Event41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Opatija, Croatia
Duration: 21 May 201825 May 2018
Conference number: 41

Conference

Conference41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018
Abbreviated titleMIPRO
CountryCroatia
CityOpatija
Period21/05/1825/05/18

Fingerprint

Photodiodes
Boron
Physics
Silicon
Diodes
Dark currents
Processing
Experiments
Doping (additives)
Annealing
Temperature
Lasers

Keywords

  • chemical vapor deposition
  • laser annealing
  • photodiodes
  • pure boron
  • silicon

Cite this

Nanver, L. K. (2018). An experimental view on PureB silicon photodiode device physics. In 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings IEEE. https://doi.org/10.23919/MIPRO.2018.8399820
Nanver, L. K. / An experimental view on PureB silicon photodiode device physics. 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 2018.
@inproceedings{f9791cf7f97147fdbaa1e35cfd744166,
title = "An experimental view on PureB silicon photodiode device physics",
abstract = "PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.",
keywords = "chemical vapor deposition, laser annealing, photodiodes, pure boron, silicon",
author = "Nanver, {L. K.}",
year = "2018",
month = "6",
day = "28",
doi = "10.23919/MIPRO.2018.8399820",
language = "English",
isbn = "978-1-5386-3777-7",
booktitle = "2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings",
publisher = "IEEE",
address = "United States",

}

Nanver, LK 2018, An experimental view on PureB silicon photodiode device physics. in 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018, Opatija, Croatia, 21/05/18. https://doi.org/10.23919/MIPRO.2018.8399820

An experimental view on PureB silicon photodiode device physics. / Nanver, L. K.

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE, 2018.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - An experimental view on PureB silicon photodiode device physics

AU - Nanver, L. K.

PY - 2018/6/28

Y1 - 2018/6/28

N2 - PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.

AB - PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. Robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron while obtaining low dark currents. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations some of which will be reviewed in this paper. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range from 700°C down to 400°C, at which temperature no doping of the bulk Si can be expected. A number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps, in particular thermal/laser annealing steps. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped bulk Si regions.

KW - chemical vapor deposition

KW - laser annealing

KW - photodiodes

KW - pure boron

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85050181366&partnerID=8YFLogxK

U2 - 10.23919/MIPRO.2018.8399820

DO - 10.23919/MIPRO.2018.8399820

M3 - Conference contribution

SN - 978-1-5386-3777-7

BT - 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings

PB - IEEE

ER -

Nanver LK. An experimental view on PureB silicon photodiode device physics. In 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings. IEEE. 2018 https://doi.org/10.23919/MIPRO.2018.8399820