An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices

Tiago K. Jappe; Ramiro R. Polla; Thiago B. Soeiro; Andre Fuerback; Marcelo L. Heldwein; Roberto Andrich

doi:10.1109/COBEP.2013.6785287

An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices

Tiago K. Jappe, Ramiro R. Polla, Thiago B. Soeiro, Andre Fuerback, Marcelo L. Heldwein, Roberto Andrich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

The recent development of higher blocking voltage gallium nitride (GaN) power FETs has the potential to enhance the power density of future power electronic converters. In this work, GaN devices are used to assemble a 100 W single-phase two-channel interleaved boost-type power factor correction (PFC) converter. The constructed hardware is able to operate with a switching frequency up to 1 MHz per channel, and hence a 2 MHz effective ripple frequency at the input and output terminals of the interleaved system. Furthermore, in order to cope with the high frequency requirements an average current mode control strategy is implemented in an FPGA device. Finally, the experimental results shown attest the feasibility of the developed digital feedback control scheme and laboratory prototype.

Original language	English
Title of host publication	2013 Brazilian Power Electronics Conference
Publisher	IEEE
Pages	1324-1329
Number of pages	6
ISBN (Print)	978-1-4799-0272-9
DOIs	https://doi.org/10.1109/COBEP.2013.6785287
Publication status	Published - 31 Oct 2013
Externally published	Yes
Event	12th Brazilian Power Electronics Conference, COBEP 2013 - Gramado, RS, Brazil Duration: 27 Oct 2013 → 31 Oct 2013 Conference number: 12

Conference

Conference	12th Brazilian Power Electronics Conference, COBEP 2013
Abbreviated title	COBEP 2013
Country/Territory	Brazil
City	Gramado, RS
Period	27/10/13 → 31/10/13

Keywords

Digital control
FPGA
Gallium nitride FETs
Single-phase interleaved PFC rectifier
n/a OA procedure

Access to Document

10.1109/COBEP.2013.6785287

Cite this

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title = "An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices",

abstract = "The recent development of higher blocking voltage gallium nitride (GaN) power FETs has the potential to enhance the power density of future power electronic converters. In this work, GaN devices are used to assemble a 100 W single-phase two-channel interleaved boost-type power factor correction (PFC) converter. The constructed hardware is able to operate with a switching frequency up to 1 MHz per channel, and hence a 2 MHz effective ripple frequency at the input and output terminals of the interleaved system. Furthermore, in order to cope with the high frequency requirements an average current mode control strategy is implemented in an FPGA device. Finally, the experimental results shown attest the feasibility of the developed digital feedback control scheme and laboratory prototype.",

keywords = "Digital control, FPGA, Gallium nitride FETs, Single-phase interleaved PFC rectifier, n/a OA procedure",

author = "Jappe, {Tiago K.} and Polla, {Ramiro R.} and Soeiro, {Thiago B.} and Andre Fuerback and Heldwein, {Marcelo L.} and Roberto Andrich",

year = "2013",

month = oct,

day = "31",

doi = "10.1109/COBEP.2013.6785287",

language = "English",

isbn = "978-1-4799-0272-9",

pages = "1324--1329",

booktitle = "2013 Brazilian Power Electronics Conference",

publisher = "IEEE",

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note = "12th Brazilian Power Electronics Conference, COBEP 2013, COBEP 2013 ; Conference date: 27-10-2013 Through 31-10-2013",

}

Jappe, TK, Polla, RR, Soeiro, TB, Fuerback, A, Heldwein, ML & Andrich, R 2013, An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices. in 2013 Brazilian Power Electronics Conference., 6785287, IEEE, pp. 1324-1329, 12th Brazilian Power Electronics Conference, COBEP 2013, Gramado, RS, Brazil, 27/10/13. https://doi.org/10.1109/COBEP.2013.6785287

TY - GEN

T1 - An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices

AU - Jappe, Tiago K.

AU - Polla, Ramiro R.

AU - Soeiro, Thiago B.

AU - Fuerback, Andre

AU - Heldwein, Marcelo L.

AU - Andrich, Roberto

N1 - Conference code: 12

PY - 2013/10/31

Y1 - 2013/10/31

N2 - The recent development of higher blocking voltage gallium nitride (GaN) power FETs has the potential to enhance the power density of future power electronic converters. In this work, GaN devices are used to assemble a 100 W single-phase two-channel interleaved boost-type power factor correction (PFC) converter. The constructed hardware is able to operate with a switching frequency up to 1 MHz per channel, and hence a 2 MHz effective ripple frequency at the input and output terminals of the interleaved system. Furthermore, in order to cope with the high frequency requirements an average current mode control strategy is implemented in an FPGA device. Finally, the experimental results shown attest the feasibility of the developed digital feedback control scheme and laboratory prototype.

AB - The recent development of higher blocking voltage gallium nitride (GaN) power FETs has the potential to enhance the power density of future power electronic converters. In this work, GaN devices are used to assemble a 100 W single-phase two-channel interleaved boost-type power factor correction (PFC) converter. The constructed hardware is able to operate with a switching frequency up to 1 MHz per channel, and hence a 2 MHz effective ripple frequency at the input and output terminals of the interleaved system. Furthermore, in order to cope with the high frequency requirements an average current mode control strategy is implemented in an FPGA device. Finally, the experimental results shown attest the feasibility of the developed digital feedback control scheme and laboratory prototype.

KW - Digital control

KW - FPGA

KW - Gallium nitride FETs

KW - Single-phase interleaved PFC rectifier

KW - n/a OA procedure

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DO - 10.1109/COBEP.2013.6785287

M3 - Conference contribution

SN - 978-1-4799-0272-9

SP - 1324

EP - 1329

BT - 2013 Brazilian Power Electronics Conference

PB - IEEE

T2 - 12th Brazilian Power Electronics Conference, COBEP 2013

Y2 - 27 October 2013 through 31 October 2013

ER -

An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices

Abstract

Conference

Keywords

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