An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices

Tiago K. Jappe, Ramiro R. Polla, Thiago B. Soeiro, Andre Fuerback, Marcelo L. Heldwein, Roberto Andrich

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)


The recent development of higher blocking voltage gallium nitride (GaN) power FETs has the potential to enhance the power density of future power electronic converters. In this work, GaN devices are used to assemble a 100 W single-phase two-channel interleaved boost-type power factor correction (PFC) converter. The constructed hardware is able to operate with a switching frequency up to 1 MHz per channel, and hence a 2 MHz effective ripple frequency at the input and output terminals of the interleaved system. Furthermore, in order to cope with the high frequency requirements an average current mode control strategy is implemented in an FPGA device. Finally, the experimental results shown attest the feasibility of the developed digital feedback control scheme and laboratory prototype.

Original languageEnglish
Title of host publication2013 Brazilian Power Electronics Conference
Number of pages6
ISBN (Print)978-1-4799-0272-9
Publication statusPublished - 31 Oct 2013
Externally publishedYes
Event12th Brazilian Power Electronics Conference, COBEP 2013 - Gramado, RS, Brazil
Duration: 27 Oct 201331 Oct 2013
Conference number: 12


Conference12th Brazilian Power Electronics Conference, COBEP 2013
Abbreviated titleCOBEP 2013
CityGramado, RS


  • Digital control
  • FPGA
  • Gallium nitride FETs
  • Single-phase interleaved PFC rectifier
  • n/a OA procedure


Dive into the research topics of 'An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices'. Together they form a unique fingerprint.

Cite this