An improved method for determining the inversion layer mobility of electrons in trench MOSFETs

M.G.L. van den Heuvel; Raymond Josephus Engelbart Hueting; E.A. Hijzen; M.A.A. in ‘t Zandt

doi:10.1109/ISPSD.2003.1225257

An improved method for determining the inversion layer mobility of electrons in trench MOSFETs

M.G.L. van den Heuvel, Raymond Josephus Engelbart Hueting, E.A. Hijzen, M.A.A. in ‘t Zandt

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Abstract

For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. In conclusion, the results show that (1) the split CV method is an accurate method for determining /spl mu//sub eff/(E/sub eff/) data in trench MOSFETs, (2) the {100} /spl mu//sub eff/ data approach published data of planar MOSFETs for high E/sub eff/ and (3) the mobility behavior can be explained with generally accepted scattering models for the entire range of E/sub eff/. The results are important for the optimization of trench power devices.

Original language	English
Pages	173-176
DOIs	https://doi.org/10.1109/ISPSD.2003.1225257
Publication status	Published - 2003
Event	15th International Symposium on Power Semiconductor Devices and ICs 2003 - Cambridge, United Kingdom Duration: 14 Jul 2003 → 17 Jul 2003 Conference number: 15

Conference

Conference	15th International Symposium on Power Semiconductor Devices and ICs 2003
Abbreviated title	ISPSD 2003
Country/Territory	United Kingdom
City	Cambridge
Period	14/07/03 → 17/07/03

Keywords

IR-55836

Access to Document

10.1109/ISPSD.2003.1225257

Cite this

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title = "An improved method for determining the inversion layer mobility of electrons in trench MOSFETs",

abstract = "For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. In conclusion, the results show that (1) the split CV method is an accurate method for determining /spl mu//sub eff/(E/sub eff/) data in trench MOSFETs, (2) the {100} /spl mu//sub eff/ data approach published data of planar MOSFETs for high E/sub eff/ and (3) the mobility behavior can be explained with generally accepted scattering models for the entire range of E/sub eff/. The results are important for the optimization of trench power devices.",

keywords = "IR-55836",

author = "{van den Heuvel}, M.G.L. and Hueting, {Raymond Josephus Engelbart} and E.A. Hijzen and {in {\textquoteleft}t Zandt}, M.A.A.",

year = "2003",

doi = "10.1109/ISPSD.2003.1225257",

language = "English",

pages = "173--176",

note = "15th International Symposium on Power Semiconductor Devices and ICs 2003, ISPSD 2003 ; Conference date: 14-07-2003 Through 17-07-2003",

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T1 - An improved method for determining the inversion layer mobility of electrons in trench MOSFETs

AU - van den Heuvel, M.G.L.

AU - Hueting, Raymond Josephus Engelbart

AU - Hijzen, E.A.

AU - in ‘t Zandt, M.A.A.

N1 - Conference code: 15

PY - 2003

Y1 - 2003

N2 - For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. In conclusion, the results show that (1) the split CV method is an accurate method for determining /spl mu//sub eff/(E/sub eff/) data in trench MOSFETs, (2) the {100} /spl mu//sub eff/ data approach published data of planar MOSFETs for high E/sub eff/ and (3) the mobility behavior can be explained with generally accepted scattering models for the entire range of E/sub eff/. The results are important for the optimization of trench power devices.

AB - For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. In conclusion, the results show that (1) the split CV method is an accurate method for determining /spl mu//sub eff/(E/sub eff/) data in trench MOSFETs, (2) the {100} /spl mu//sub eff/ data approach published data of planar MOSFETs for high E/sub eff/ and (3) the mobility behavior can be explained with generally accepted scattering models for the entire range of E/sub eff/. The results are important for the optimization of trench power devices.

KW - IR-55836

U2 - 10.1109/ISPSD.2003.1225257

DO - 10.1109/ISPSD.2003.1225257

M3 - Paper

SP - 173

EP - 176

T2 - 15th International Symposium on Power Semiconductor Devices and ICs 2003

Y2 - 14 July 2003 through 17 July 2003

ER -

An improved method for determining the inversion layer mobility of electrons in trench MOSFETs

Abstract

Conference

Keywords

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