An improved method for determining the inversion layer mobility of electrons in trench MOSFETs

M.G.L. van den Heuvel, Raymond Josephus Engelbart Hueting, E.A. Hijzen, M.A.A. in ‘t Zandt

    Research output: Contribution to conferencePaper

    6 Citations (Scopus)
    69 Downloads (Pure)

    Abstract

    For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. In conclusion, the results show that (1) the split CV method is an accurate method for determining /spl mu//sub eff/(E/sub eff/) data in trench MOSFETs, (2) the {100} /spl mu//sub eff/ data approach published data of planar MOSFETs for high E/sub eff/ and (3) the mobility behavior can be explained with generally accepted scattering models for the entire range of E/sub eff/. The results are important for the optimization of trench power devices.
    Original languageEnglish
    Pages173-176
    DOIs
    Publication statusPublished - 2003
    Event15th International Symposium on Power Semiconductor Devices and ICs 2003 - Cambridge, United Kingdom
    Duration: 14 Jul 200317 Jul 2003
    Conference number: 15

    Conference

    Conference15th International Symposium on Power Semiconductor Devices and ICs 2003
    Abbreviated titleISPSD 2003
    CountryUnited Kingdom
    CityCambridge
    Period14/07/0317/07/03

    Keywords

    • IR-55836

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