An inductorless wideband Balun-LNA in 65nm CMOS with balanced output

S.C. Blaakmeer, Eric A.M. Klumperink, Bram Nauta, D.M.W. Leenaerts

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    60 Citations (Scopus)
    134 Downloads (Pure)

    Abstract

    Abstract — An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<-14dB, IIP3 = 0dBm and IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.
    Original languageEnglish
    Title of host publicationESSCIRC 2007 - 33rd European Solid-State Circuits Conference
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages364-367
    Number of pages4
    ISBN (Print)1-4244-1125-4
    DOIs
    Publication statusPublished - 12 Sep 2007
    Event33rd European Solid State Circuits Conference, ESSCIRC 2007 - München, Germany
    Duration: 11 Sep 200713 Sep 2007
    Conference number: 33

    Conference

    Conference33rd European Solid State Circuits Conference, ESSCIRC 2007
    Abbreviated titleESSCIRC
    CountryGermany
    CityMünchen
    Period11/09/0713/09/07

    Keywords

    • EWI-10881
    • METIS-245724
    • IR-58155

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