An inductorless wideband Balun-LNA in 65nm CMOS with balanced output

S.C. Blaakmeer; Eric A.M. Klumperink; Bram Nauta; D.M.W. Leenaerts

doi:10.1109/ESSCIRC.2007.4430319

An inductorless wideband Balun-LNA in 65nm CMOS with balanced output

S.C. Blaakmeer, Eric A.M. Klumperink, Bram Nauta, D.M.W. Leenaerts

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

62 Citations (Scopus)

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Abstract

Abstract — An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<-14dB, IIP3 = 0dBm and IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.

Original language	English
Title of host publication	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	364-367
Number of pages	4
ISBN (Print)	1-4244-1125-4
DOIs	https://doi.org/10.1109/ESSCIRC.2007.4430319
Publication status	Published - 12 Sept 2007
Event	33rd European Solid State Circuits Conference, ESSCIRC 2007 - München, Germany Duration: 11 Sept 2007 → 13 Sept 2007 Conference number: 33

Conference

Conference	33rd European Solid State Circuits Conference, ESSCIRC 2007
Abbreviated title	ESSCIRC
Country/Territory	Germany
City	München
Period	11/09/07 → 13/09/07

Keywords

EWI-10881
METIS-245724
IR-58155

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10.1109/ESSCIRC.2007.4430319

an_inductorlessFinal published version, 1.82 MB

Cite this

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title = "An inductorless wideband Balun-LNA in 65nm CMOS with balanced output",

abstract = "Abstract — An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<-14dB, IIP3 = 0dBm and IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.",

keywords = "EWI-10881, METIS-245724, IR-58155",

author = "S.C. Blaakmeer and Klumperink, {Eric A.M.} and Bram Nauta and D.M.W. Leenaerts",

year = "2007",

month = sep,

day = "12",

doi = "10.1109/ESSCIRC.2007.4430319",

language = "English",

isbn = "1-4244-1125-4",

pages = "364--367",

booktitle = "ESSCIRC 2007 - 33rd European Solid-State Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "33rd European Solid State Circuits Conference, ESSCIRC 2007, ESSCIRC ; Conference date: 11-09-2007 Through 13-09-2007",

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TY - GEN

T1 - An inductorless wideband Balun-LNA in 65nm CMOS with balanced output

AU - Blaakmeer, S.C.

AU - Klumperink, Eric A.M.

AU - Nauta, Bram

AU - Leenaerts, D.M.W.

N1 - Conference code: 33

PY - 2007/9/12

Y1 - 2007/9/12

N2 - Abstract — An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<-14dB, IIP3 = 0dBm and IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.

AB - Abstract — An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<-14dB, IIP3 = 0dBm and IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.

KW - EWI-10881

KW - METIS-245724

KW - IR-58155

U2 - 10.1109/ESSCIRC.2007.4430319

DO - 10.1109/ESSCIRC.2007.4430319

M3 - Conference contribution

SN - 1-4244-1125-4

SP - 364

EP - 367

BT - ESSCIRC 2007 - 33rd European Solid-State Circuits Conference

PB - IEEE

CY - Piscataway, NJ

T2 - 33rd European Solid State Circuits Conference, ESSCIRC 2007

Y2 - 11 September 2007 through 13 September 2007

ER -

An inductorless wideband Balun-LNA in 65nm CMOS with balanced output

Abstract

Conference

Keywords

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