An initial modelling and simulation study on the 1D Si-Based LED

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    In this paper we present an initial modelling and simulation study of a 1D Si light-emitting diode (LED). A new model is presented describing dc electrical characteristics and the internal quantum efficiency as a function of the applied bias. The model takes into account all recombination processes focusing on the active region only and is shown to be in good agreement with the simulation results. The maximum internal quantum efficiency (η) of a silicon LED was found to be about 5.3%. Future research directions include finding the temperature dependency of the LED and developing a full model which describes the quantum efficiency of the whole LED as a function of the voltage or current, including two-dimensional effects, parasitic recombination centers and hetero structures.
    Original languageUndefined
    Title of host publicationProceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages170-173
    Number of pages4
    ISBN (Print)978-90-73461-62-8
    Publication statusPublished - 26 Nov 2009
    Event12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands
    Duration: 26 Nov 200927 Nov 2009
    Conference number: 12

    Publication series

    Name
    PublisherTechnology Foundation STW

    Conference

    Conference12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period26/11/0927/11/09

    Keywords

    • METIS-264272
    • SC-DPM: Device Physics and Modeling
    • EWI-17066
    • IR-69057

    Cite this

    Puliyankot Palackavalapil, V., Hueting, R. J. E., & Schmitz, J. (2009). An initial modelling and simulation study on the 1D Si-Based LED. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 170-173). Utrecht, The Netherlands: STW.