An initial modelling and simulation study on the 1D Si-Based LED

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Abstract

In this paper we present an initial modelling and simulation study of a 1D Si light-emitting diode (LED). A new model is presented describing dc electrical characteristics and the internal quantum efficiency as a function of the applied bias. The model takes into account all recombination processes focusing on the active region only and is shown to be in good agreement with the simulation results. The maximum internal quantum efficiency (η) of a silicon LED was found to be about 5.3%. Future research directions include finding the temperature dependency of the LED and developing a full model which describes the quantum efficiency of the whole LED as a function of the voltage or current, including two-dimensional effects, parasitic recombination centers and hetero structures.
Original languageUndefined
Title of host publicationProceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Place of PublicationUtrecht, The Netherlands
PublisherSTW
Pages170-173
Number of pages4
ISBN (Print)978-90-73461-62-8
Publication statusPublished - 26 Nov 2009
Event12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands
Duration: 26 Nov 200927 Nov 2009
Conference number: 12

Publication series

Name
PublisherTechnology Foundation STW

Conference

Conference12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
Abbreviated titleSAFE
CountryNetherlands
CityVeldhoven
Period26/11/0927/11/09

Keywords

  • METIS-264272
  • SC-DPM: Device Physics and Modeling
  • EWI-17066
  • IR-69057

Cite this

Puliyankot Palackavalapil, V., Hueting, R. J. E., & Schmitz, J. (2009). An initial modelling and simulation study on the 1D Si-Based LED. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 170-173). Utrecht, The Netherlands: STW.
Puliyankot Palackavalapil, V. ; Hueting, Raymond Josephus Engelbart ; Schmitz, Jurriaan. / An initial modelling and simulation study on the 1D Si-Based LED. Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands : STW, 2009. pp. 170-173
@inproceedings{f44558819eb445e4a6955dc0222914db,
title = "An initial modelling and simulation study on the 1D Si-Based LED",
abstract = "In this paper we present an initial modelling and simulation study of a 1D Si light-emitting diode (LED). A new model is presented describing dc electrical characteristics and the internal quantum efficiency as a function of the applied bias. The model takes into account all recombination processes focusing on the active region only and is shown to be in good agreement with the simulation results. The maximum internal quantum efficiency (η) of a silicon LED was found to be about 5.3{\%}. Future research directions include finding the temperature dependency of the LED and developing a full model which describes the quantum efficiency of the whole LED as a function of the voltage or current, including two-dimensional effects, parasitic recombination centers and hetero structures.",
keywords = "METIS-264272, SC-DPM: Device Physics and Modeling, EWI-17066, IR-69057",
author = "{Puliyankot Palackavalapil}, V. and Hueting, {Raymond Josephus Engelbart} and Jurriaan Schmitz",
year = "2009",
month = "11",
day = "26",
language = "Undefined",
isbn = "978-90-73461-62-8",
publisher = "STW",
pages = "170--173",
booktitle = "Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",

}

Puliyankot Palackavalapil, V, Hueting, RJE & Schmitz, J 2009, An initial modelling and simulation study on the 1D Si-Based LED. in Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. STW, Utrecht, The Netherlands, pp. 170-173, 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009, Veldhoven, Netherlands, 26/11/09.

An initial modelling and simulation study on the 1D Si-Based LED. / Puliyankot Palackavalapil, V.; Hueting, Raymond Josephus Engelbart; Schmitz, Jurriaan.

Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands : STW, 2009. p. 170-173.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - An initial modelling and simulation study on the 1D Si-Based LED

AU - Puliyankot Palackavalapil, V.

AU - Hueting, Raymond Josephus Engelbart

AU - Schmitz, Jurriaan

PY - 2009/11/26

Y1 - 2009/11/26

N2 - In this paper we present an initial modelling and simulation study of a 1D Si light-emitting diode (LED). A new model is presented describing dc electrical characteristics and the internal quantum efficiency as a function of the applied bias. The model takes into account all recombination processes focusing on the active region only and is shown to be in good agreement with the simulation results. The maximum internal quantum efficiency (η) of a silicon LED was found to be about 5.3%. Future research directions include finding the temperature dependency of the LED and developing a full model which describes the quantum efficiency of the whole LED as a function of the voltage or current, including two-dimensional effects, parasitic recombination centers and hetero structures.

AB - In this paper we present an initial modelling and simulation study of a 1D Si light-emitting diode (LED). A new model is presented describing dc electrical characteristics and the internal quantum efficiency as a function of the applied bias. The model takes into account all recombination processes focusing on the active region only and is shown to be in good agreement with the simulation results. The maximum internal quantum efficiency (η) of a silicon LED was found to be about 5.3%. Future research directions include finding the temperature dependency of the LED and developing a full model which describes the quantum efficiency of the whole LED as a function of the voltage or current, including two-dimensional effects, parasitic recombination centers and hetero structures.

KW - METIS-264272

KW - SC-DPM: Device Physics and Modeling

KW - EWI-17066

KW - IR-69057

M3 - Conference contribution

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EP - 173

BT - Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors

PB - STW

CY - Utrecht, The Netherlands

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Puliyankot Palackavalapil V, Hueting RJE, Schmitz J. An initial modelling and simulation study on the 1D Si-Based LED. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands: STW. 2009. p. 170-173