In this paper we present an initial modelling and simulation study of a 1D Si light-emitting diode (LED). A new model is presented describing dc electrical characteristics and the internal quantum efficiency as a function of the applied bias. The model takes into account all recombination processes focusing on the active region only and is shown to be in good agreement with the simulation results. The maximum internal quantum efficiency (η) of a silicon LED was found to be about 5.3%. Future research directions include finding the temperature dependency of the LED and developing a full model which describes the quantum efficiency of the whole LED as a function of the voltage or current, including two-dimensional effects, parasitic recombination centers and hetero structures.
|Title of host publication||Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||4|
|Publication status||Published - 26 Nov 2009|
|Event||12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands|
Duration: 26 Nov 2009 → 27 Nov 2009
Conference number: 12
|Publisher||Technology Foundation STW|
|Conference||12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009|
|Period||26/11/09 → 27/11/09|
- SC-DPM: Device Physics and Modeling
Puliyankot Palackavalapil, V., Hueting, R. J. E., & Schmitz, J. (2009). An initial modelling and simulation study on the 1D Si-Based LED. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 170-173). Utrecht, The Netherlands: STW.