An Initial study on The Reliability of Power Semiconductor Devices

B.K. Boksteen; Raymond Josephus Engelbart Hueting; Cora Salm; Jurriaan Schmitz

An Initial study on The Reliability of Power Semiconductor Devices

B.K. Boksteen, Raymond Josephus Engelbart Hueting, Cora Salm, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. [1]) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect [2], [3]) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS.

Original language	Undefined
Title of host publication	Proceedings of STW.ICT Conference 2010
Place of Publication	Utrecht
Publisher	STW
Pages	68-72
Number of pages	5
ISBN (Print)	978-90-73461-67-3
Publication status	Published - 18 Nov 2010
Event	2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands Duration: 18 Nov 2010 → 19 Nov 2010 https://www.elis.ugent.be/en/project/og/cfp/2558

Publication series

Name
Publisher	Technology Foundation STW

Conference

Conference	2010 STW.ICT Conference on Research in Information and Communication Technology
Abbreviated title	STW.ICT 2010
Country	Netherlands
City	Veldhoven
Period	18/11/10 → 19/11/10
Internet address	https://www.elis.ugent.be/en/project/og/cfp/2558

Keywords

METIS-276392
Breakdown voltage
IR-76311
EWI-19753
electric field
Reliability
RESURF
Power semiconductor devices

Access to Document

boksteen
open

http://eprints.eemcs.utwente.nl/secure2/19753/01/boksteen.pdf

Cite this

@inproceedings{a945720f0fef435daf996ab2e35de873,

title = "An Initial study on The Reliability of Power Semiconductor Devices",

abstract = "An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. [1]) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect [2], [3]) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS.",

keywords = "METIS-276392, Breakdown voltage, IR-76311, EWI-19753, electric field, Reliability, RESURF, Power semiconductor devices",

author = "B.K. Boksteen and Hueting, {Raymond Josephus Engelbart} and Cora Salm and Jurriaan Schmitz",

year = "2010",

month = nov,

day = "18",

language = "Undefined",

isbn = "978-90-73461-67-3",

publisher = "STW",

pages = "68--72",

booktitle = "Proceedings of STW.ICT Conference 2010",

note = "null ; Conference date: 18-11-2010 Through 19-11-2010",

url = "https://www.elis.ugent.be/en/project/og/cfp/2558",

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TY - GEN

T1 - An Initial study on The Reliability of Power Semiconductor Devices

AU - Boksteen, B.K.

AU - Hueting, Raymond Josephus Engelbart

AU - Salm, Cora

AU - Schmitz, Jurriaan

PY - 2010/11/18

Y1 - 2010/11/18

N2 - An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. [1]) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect [2], [3]) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS.

AB - An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. [1]) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect [2], [3]) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS.

KW - METIS-276392

KW - Breakdown voltage

KW - IR-76311

KW - EWI-19753

KW - electric field

KW - Reliability

KW - RESURF

KW - Power semiconductor devices

M3 - Conference contribution

SN - 978-90-73461-67-3

SP - 68

EP - 72

BT - Proceedings of STW.ICT Conference 2010

PB - STW

CY - Utrecht

Y2 - 18 November 2010 through 19 November 2010

ER -