An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. ) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect , ) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS.
|Title of host publication||Proceedings of STW.ICT Conference 2010|
|Place of Publication||Utrecht|
|Number of pages||5|
|Publication status||Published - 18 Nov 2010|
|Event||2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands|
Duration: 18 Nov 2010 → 19 Nov 2010
|Publisher||Technology Foundation STW|
|Conference||2010 STW.ICT Conference on Research in Information and Communication Technology|
|Abbreviated title||STW.ICT 2010|
|Period||18/11/10 → 19/11/10|
- Breakdown voltage
- electric field
- Power semiconductor devices
Boksteen, B. K., Hueting, R. J. E., Salm, C., & Schmitz, J. (2010). An Initial study on The Reliability of Power Semiconductor Devices. In Proceedings of STW.ICT Conference 2010 (pp. 68-72). Utrecht: STW.