An Initial study on The Reliability of Power Semiconductor Devices

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    Abstract

    An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. [1]) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect [2], [3]) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS.
    Original languageUndefined
    Title of host publicationProceedings of STW.ICT Conference 2010
    Place of PublicationUtrecht
    PublisherSTW
    Pages68-72
    Number of pages5
    ISBN (Print)978-90-73461-67-3
    Publication statusPublished - 18 Nov 2010
    Event2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands
    Duration: 18 Nov 201019 Nov 2010
    https://www.elis.ugent.be/en/project/og/cfp/2558

    Publication series

    Name
    PublisherTechnology Foundation STW

    Conference

    Conference2010 STW.ICT Conference on Research in Information and Communication Technology
    Abbreviated titleSTW.ICT 2010
    CountryNetherlands
    CityVeldhoven
    Period18/11/1019/11/10
    Internet address

    Keywords

    • METIS-276392
    • Breakdown voltage
    • IR-76311
    • EWI-19753
    • electric field
    • Reliability
    • RESURF
    • Power semiconductor devices

    Cite this

    Boksteen, B. K., Hueting, R. J. E., Salm, C., & Schmitz, J. (2010). An Initial study on The Reliability of Power Semiconductor Devices. In Proceedings of STW.ICT Conference 2010 (pp. 68-72). Utrecht: STW.