An integrated gaseous detector using microfabrication post-processing technology

V.M. Blanco Carballo, Cora Salm, Sander M. Smits, Jurriaan Schmitz, M.A. Chefdeville, H. van der Graaf, J. Timmermans, J. Timmermans, J.L. Visschers

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    this paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.
    Original languageUndefined
    Title of host publicationProceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages369-372
    Number of pages4
    ISBN (Print)90-73461-44-8
    Publication statusPublished - 23 Nov 2006
    Event9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands
    Duration: 23 Nov 200624 Nov 2006
    Conference number: 9

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number10

    Workshop

    Workshop9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
    CountryNetherlands
    CityVeldhoven
    Period23/11/0624/11/06

    Keywords

    • SC-RID: Radiation Imaging detectors
    • METIS-237711
    • EWI-8417
    • IR-63763

    Cite this

    Blanco Carballo, V. M., Salm, C., Smits, S. M., Schmitz, J., Chefdeville, M. A., van der Graaf, H., ... Visschers, J. L. (2006). An integrated gaseous detector using microfabrication post-processing technology. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 369-372). Utrecht, The Netherlands: STW.