An integrated gaseous detector using microfabrication post-processing technology

V.M. Blanco Carballo; Cora Salm; Sander M. Smits; Jurriaan Schmitz; M.A. Chefdeville; H. van der Graaf; J. Timmermans; J.L. Visschers

An integrated gaseous detector using microfabrication post-processing technology

V.M. Blanco Carballo, Cora Salm, Sander M. Smits, Jurriaan Schmitz, M.A. Chefdeville, H. van der Graaf, J. Timmermans, J.L. Visschers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

this paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.

Original language	English
Title of host publication	Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	369-372
Number of pages	4
ISBN (Print)	90-73461-44-8
Publication status	Published - 23 Nov 2006
Event	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9

Workshop

Workshop	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
Country/Territory	Netherlands
City	Veldhoven
Period	23/11/06 → 24/11/06

Keywords

SC-RID: Radiation Imaging detectors

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Blanco Carballo, V.M. ; Salm, Cora ; Smits, Sander M. ; Schmitz, Jurriaan ; Chefdeville, M.A. ; van der Graaf, H. ; Timmermans, J. ; Visschers, J.L. / An integrated gaseous detector using microfabrication post-processing technology. Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands : STW, 2006. pp. 369-372

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title = "An integrated gaseous detector using microfabrication post-processing technology",

abstract = "this paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.",

keywords = "SC-RID: Radiation Imaging detectors",

author = "{Blanco Carballo}, V.M. and Cora Salm and Smits, {Sander M.} and Jurriaan Schmitz and M.A. Chefdeville and {van der Graaf}, H. and J. Timmermans and J.L. Visschers",

year = "2006",

month = nov,

day = "23",

language = "English",

isbn = "90-73461-44-8",

pages = "369--372",

booktitle = "Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006",

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note = "9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 ; Conference date: 23-11-2006 Through 24-11-2006",

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Blanco Carballo, VM, Salm, C , Smits, SM , Schmitz, J, Chefdeville, MA, van der Graaf, H, Timmermans, J & Visschers, JL 2006, An integrated gaseous detector using microfabrication post-processing technology. in Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006. STW, Utrecht, The Netherlands, pp. 369-372, 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006, Veldhoven, Netherlands, 23/11/06.

An integrated gaseous detector using microfabrication post-processing technology. / Blanco Carballo, V.M.; Salm, Cora ; Smits, Sander M.; Schmitz, Jurriaan; Chefdeville, M.A.; van der Graaf, H.; Timmermans, J.; Visschers, J.L.

Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands : STW, 2006. p. 369-372.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - An integrated gaseous detector using microfabrication post-processing technology

AU - Blanco Carballo, V.M.

AU - Salm, Cora

AU - Smits, Sander M.

AU - Schmitz, Jurriaan

AU - Chefdeville, M.A.

AU - van der Graaf, H.

AU - Timmermans, J.

AU - Visschers, J.L.

N1 - Conference code: 9

PY - 2006/11/23

Y1 - 2006/11/23

N2 - this paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.

AB - this paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.

KW - SC-RID: Radiation Imaging detectors

M3 - Conference contribution

SN - 90-73461-44-8

SP - 369

EP - 372

BT - Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006

PB - STW

CY - Utrecht, The Netherlands

T2 - 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006

Y2 - 23 November 2006 through 24 November 2006

ER -

An integrated gaseous detector using microfabrication post-processing technology

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Keywords

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