Abstract
this paper presents the operational
characteristics of several integrated Micromegas detectors.
These detectors called InGrids are made by means of
micro-electronic fabrication techniques. These techniques
allow a large variety of detector geometry to be made and
studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.
Original language | Undefined |
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Title of host publication | Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 |
Place of Publication | Utrecht, The Netherlands |
Publisher | STW |
Pages | 369-372 |
Number of pages | 4 |
ISBN (Print) | 90-73461-44-8 |
Publication status | Published - 23 Nov 2006 |
Event | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9 |
Publication series
Name | |
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Publisher | Technology Foundation STW |
Number | 10 |
Workshop
Workshop | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 |
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Country | Netherlands |
City | Veldhoven |
Period | 23/11/06 → 24/11/06 |
Keywords
- SC-RID: Radiation Imaging detectors
- METIS-237711
- EWI-8417
- IR-63763