this paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.
|Title of host publication||Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||4|
|Publication status||Published - 23 Nov 2006|
|Event||9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands|
Duration: 23 Nov 2006 → 24 Nov 2006
Conference number: 9
|Publisher||Technology Foundation STW|
|Workshop||9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006|
|Period||23/11/06 → 24/11/06|
- SC-RID: Radiation Imaging detectors
Blanco Carballo, V. M., Salm, C., Smits, S. M., Schmitz, J., Chefdeville, M. A., van der Graaf, H., ... Visschers, J. L. (2006). An integrated gaseous detector using microfabrication post-processing technology. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 369-372). Utrecht, The Netherlands: STW.