An integrated micromegas UV-photon detector

Joost Melai; Alexey Lyashenko; Amos Breskin; Harry van der Graaf; Jan Timmermans; Jan Visschers; Cora Salm; Jurriaan Schmitz

doi:10.1016/j.nima.2010.06.165

An integrated micromegas UV-photon detector

Joost Melai, Alexey Lyashenko, Amos Breskin, Harry van der Graaf, Jan Timmermans, Jan Visschers, Cora Salm, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

Abstract

Preliminary results of a photon detector combining a Micromegas-like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in a CMOS compatible InGrid technology, which allows to postprocess it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of 6000 were reached in a single-grid element operated in Ar/CH4, with a 2% ion backflow fraction returning to the photocathode.

Original language	English
Pages (from-to)	194-197
Number of pages	4
Journal	Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment
Volume	633
DOIs	https://doi.org/10.1016/j.nima.2010.06.165
Publication status	Published - 8 Jul 2010

Keywords

SC-RID: Radiation Imaging detectors
CsI photocathode
Gaseous radiation detector
CMOS post-processing
UV photon detection
MICROMEGAS

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10.1016/j.nima.2010.06.165

Cite this

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title = "An integrated micromegas UV-photon detector",

abstract = "Preliminary results of a photon detector combining a Micromegas-like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in a CMOS compatible InGrid technology, which allows to postprocess it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of 6000 were reached in a single-grid element operated in Ar/CH4, with a 2% ion backflow fraction returning to the photocathode.",

keywords = "SC-RID: Radiation Imaging detectors, CsI photocathode, Gaseous radiation detector, CMOS post-processing, UV photon detection, MICROMEGAS",

author = "Joost Melai and Alexey Lyashenko and Amos Breskin and {van der Graaf}, Harry and Jan Timmermans and Jan Visschers and Cora Salm and Jurriaan Schmitz",

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language = "English",

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TY - JOUR

T1 - An integrated micromegas UV-photon detector

AU - Melai, Joost

AU - Lyashenko, Alexey

AU - Breskin, Amos

AU - van der Graaf, Harry

AU - Timmermans, Jan

AU - Visschers, Jan

AU - Salm, Cora

AU - Schmitz, Jurriaan

N1 - 10.1016/j.nima.2010.06.165

PY - 2010/7/8

Y1 - 2010/7/8

N2 - Preliminary results of a photon detector combining a Micromegas-like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in a CMOS compatible InGrid technology, which allows to postprocess it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of 6000 were reached in a single-grid element operated in Ar/CH4, with a 2% ion backflow fraction returning to the photocathode.

AB - Preliminary results of a photon detector combining a Micromegas-like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in a CMOS compatible InGrid technology, which allows to postprocess it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of 6000 were reached in a single-grid element operated in Ar/CH4, with a 2% ion backflow fraction returning to the photocathode.

KW - SC-RID: Radiation Imaging detectors

KW - CsI photocathode

KW - Gaseous radiation detector

KW - CMOS post-processing

KW - UV photon detection

KW - MICROMEGAS

U2 - 10.1016/j.nima.2010.06.165

DO - 10.1016/j.nima.2010.06.165

M3 - Article

SN - 0168-9002

VL - 633

SP - 194

EP - 197

JO - Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment

JF - Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment

ER -

An integrated micromegas UV-photon detector

Abstract

Keywords

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