An integrated optic adiabatic TE/TM mode splitter on silicon

R.M. de Ridder; A.F.M. Sander; A. Driessen; J.H.J. Fluitman

doi:10.1109/50.251178

An integrated optic adiabatic TE/TM mode splitter on silicon

R.M. de Ridder, A.F.M. Sander, A. Driessen, J.H.J. Fluitman

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

A compact integrated optic fundamental TE/TM mode splitter, based on the mode-sorting characteristics of an asymmetrical adiabatic Y junction of optical waveguides exhibiting shape birefringence, operating at 1550 nm, has been designed using the discrete sine method (DSM) and the beam propagation method (BPM), realized, and tested. The structures were fabricated in a system of SiO2, SiOxNy, and Si3N4 layers, using a low-temperature plasma-enhanced chemical-vapor deposition (PECVD) process, compatible with standard silicon IC processing.

Original language	Undefined
Pages (from-to)	1806-1811
Number of pages	6
Journal	Journal of lightwave technology
Volume	11
Issue number	11
DOIs	https://doi.org/10.1109/50.251178
Publication status	Published - Nov 1993

Keywords

EWI-14155
IR-55682

Access to Document

10.1109/50.251178

Cite this

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title = "An integrated optic adiabatic TE/TM mode splitter on silicon",

abstract = "A compact integrated optic fundamental TE/TM mode splitter, based on the mode-sorting characteristics of an asymmetrical adiabatic Y junction of optical waveguides exhibiting shape birefringence, operating at 1550 nm, has been designed using the discrete sine method (DSM) and the beam propagation method (BPM), realized, and tested. The structures were fabricated in a system of SiO2, SiOxNy, and Si3N4 layers, using a low-temperature plasma-enhanced chemical-vapor deposition (PECVD) process, compatible with standard silicon IC processing.",

keywords = "EWI-14155, IR-55682",

author = "{de Ridder}, R.M. and A.F.M. Sander and A. Driessen and J.H.J. Fluitman",

year = "1993",

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AU - Fluitman, J.H.J.

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AB - A compact integrated optic fundamental TE/TM mode splitter, based on the mode-sorting characteristics of an asymmetrical adiabatic Y junction of optical waveguides exhibiting shape birefringence, operating at 1550 nm, has been designed using the discrete sine method (DSM) and the beam propagation method (BPM), realized, and tested. The structures were fabricated in a system of SiO2, SiOxNy, and Si3N4 layers, using a low-temperature plasma-enhanced chemical-vapor deposition (PECVD) process, compatible with standard silicon IC processing.

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KW - IR-55682

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