An integrated single photon detector array using porous anodic alumina

Joost Melai, Cora Salm, Jurriaan Schmitz, Sander Smits, Jan Visschers

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    Abstract

    This paper outlines a single photon sensitive detector array. The detector structure is made via CMOS compatible wafer-scale post-processing. The total system comprises a CMOS imaging chip with charge sensitive pixels, an electron multiplier and a photo-cathode. The electron multiplication is achieved by operating a thick layer of integrated porous anodic alumina as an MCP. Material and geometry considerations are given as well as some first experimental results on the required processing steps and on an intermediate experiment with discrete samples of porous anodic alumina.
    Original languageEnglish
    Title of host publicationProceedings 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages389-393
    Number of pages5
    ISBN (Print)90-73461-44-8
    Publication statusPublished - 27 Nov 2006
    Event9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands
    Duration: 23 Nov 200624 Nov 2006
    Conference number: 9

    Workshop

    Workshop9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
    Country/TerritoryNetherlands
    CityVeldhoven
    Period23/11/0624/11/06

    Keywords

    • SC-RID: Radiation Imaging detectors
    • CMOS compatibility
    • Electron multipliers
    • Micro-channel plate
    • Photon detection
    • Porous anodic alumina
    • Waferscale post-processing

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