Abstract
Abstract—This paper outlines a single photon sensitive detector array. The detector structure is made via CMOS compatible wafer-scale post-processing. The total system comprises a CMOS imaging chip with charge sensitive pixels, an electron multiplier and a photo-cathode. The electron multiplication is achieved by operating a thick layer of integrated porous anodic alumina as an MCP. Material and geometry considerations are given as well as some first experimental results on the required processing steps and on an intermediate experiment with discrete samples of porous anodic alumina.
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 389-393 |
| Number of pages | 5 |
| ISBN (Print) | 90-73461-44-8 |
| Publication status | Published - 27 Nov 2006 |
Publication series
| Name | |
|---|---|
| Publisher | Technology Foundation STW |
| Number | 10 |
Keywords
- SC-RID: Radiation Imaging detectors
- METIS-237712
- EWI-8418
- IR-63764
Cite this
Melai, J., Salm, C., Schmitz, J., Smits, S. M., & Visschers, J. L. (2006). An integrated single photon detector array using porous anodic alumina. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 389-393). Utrecht, The Netherlands: STW.