Abstract
This paper outlines a single photon sensitive detector array. The detector structure is made via CMOS compatible wafer-scale post-processing. The total system comprises a CMOS imaging chip with charge sensitive pixels, an electron multiplier and a photo-cathode. The electron multiplication is achieved by operating a thick layer of integrated porous anodic alumina as an MCP. Material and geometry considerations are given as well as some first experimental results on the required processing steps and on an intermediate experiment with discrete samples of porous anodic alumina.
| Original language | English |
|---|---|
| Title of host publication | Proceedings 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006 |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 389-393 |
| Number of pages | 5 |
| ISBN (Print) | 90-73461-44-8 |
| Publication status | Published - 27 Nov 2006 |
| Event | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9 |
Workshop
| Workshop | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 |
|---|---|
| Country | Netherlands |
| City | Veldhoven |
| Period | 23/11/06 → 24/11/06 |
Keywords
- SC-RID: Radiation Imaging detectors
- CMOS compatibility
- Electron multipliers
- Micro-channel plate
- Photon detection
- Porous anodic alumina
- Waferscale post-processing
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Cite this
Melai, J., Salm, C., Schmitz, J., Smits, S., & Visschers, J. (2006). An integrated single photon detector array using porous anodic alumina. In Proceedings 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 389-393). Utrecht, The Netherlands: STW.