The aim of the work is fabrication of a photon detector array made using IC compatible wafer-scale post-processing steps. Plans will be presented to outline these fabrication steps. The detector comprises an integrated Micro-Channel- late and an imaging chip like Medipix2.
On top of the IC wafer a thin counter-electrode and a thick A1 layer are deposited. The wafers are immersed in an acidic solution and a bias is applied between the metal stack and an anodization electrode. The A1 is converted into a self-organized porous A12O3 structure that acts as an MCP. On top of the alumina a metal electrode is formed. The bottom electrode of the MCP is connected to the pixel input pads. Methods will be presented to prevent the counter-electrode from electrically shorting all pixels. A photo-cathode can possibly be integrated as well. After photo-electric conversion the primary electron drifts into one of the pores of the MCP where it will be multiplied, at the bottom the accumulated charge is collected at the input pads of the charge sensitive pixel detector.Results will be presented on an intermediate step to test this arrangement involving a discrete porous anodic alumina layer to be placed above the imaging ASIC.
|Workshop||8th International Workshop on Radiation Imaging Detectors, iWoRiD 2006|
|Period||2/06/06 → 6/06/06|