An intensive study of LPCVD silicon morphology and texture for non volatile memory

J.H. Klootwijk, H. van Kranenburg, C. Cobianu, V. Petrescu, P.H. Woerlee, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    10 Citations (Scopus)
    21 Downloads (Pure)

    Abstract

    Results of an intensive study by means of XRD, SEM, AFM and TEM of the microstructure (i.e. the texture and morphology) of LPCVD silicon layers as a function of different process parameters are described. The influence of different deposition parameters, like partial and total pressure, doping, deposition and anneal temperature is shown. In particular the roughness of the silicon surface is investigated. The relation of surface roughness to the electrical properties of dielectrics, grown on these silicon layers, is briefly discussed.
    Original languageEnglish
    Title of host publicationProceedings of the 25th European Solid State Device Research Conference, ESSDERC'95
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    Pages383-386
    Publication statusPublished - 25 Sep 1995
    Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
    Duration: 25 Sep 199527 Sep 1995
    Conference number: 25

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference25th European Solid State Device Research Conference, ESSDERC 1995
    Abbreviated titleESSDERC
    CountryNetherlands
    CityThe Hague
    Period25/09/9527/09/95

    Keywords

    • IR-96424
    • METIS-113987

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  • Cite this

    Klootwijk, J. H., van Kranenburg, H., Cobianu, C., Petrescu, V., Woerlee, P. H., & Wallinga, H. (1995). An intensive study of LPCVD silicon morphology and texture for non volatile memory. In Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95 (pp. 383-386). Piscataway, NJ, USA: IEEE.