An intensive study of LPCVD silicon morphology and texture for non volatile memory

J.H. Klootwijk; H. van Kranenburg; C. Cobianu; V. Petrescu; P.H. Woerlee; Hans Wallinga

An intensive study of LPCVD silicon morphology and texture for non volatile memory

J.H. Klootwijk
, H. van Kranenburg
, C. Cobianu
, V. Petrescu
, P.H. Woerlee
, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

10 Citations (Scopus)

54 Downloads (Pure)

Abstract

Results of an intensive study by means of XRD, SEM, AFM and TEM of the microstructure (i.e. the texture and morphology) of LPCVD silicon layers as a function of different process parameters are described. The influence of different deposition parameters, like partial and total pressure, doping, deposition and anneal temperature is shown. In particular the roughness of the silicon surface is investigated. The relation of surface roughness to the electrical properties of dielectrics, grown on these silicon layers, is briefly discussed.

Original language	English
Title of host publication	Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	383-386
Publication status	Published - 25 Sept 1995
Event	25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands Duration: 25 Sept 1995 → 27 Sept 1995 Conference number: 25

Publication series

Name
Publisher	IEEE

Conference

Conference	25th European Solid State Device Research Conference, ESSDERC 1995
Abbreviated title	ESSDERC
Country/Territory	Netherlands
City	The Hague
Period	25/09/95 → 27/09/95

Keywords

IR-96424
METIS-113987

Access to Document

05435909

http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5435909

Cite this

@inproceedings{d2f5c8347a2045ddb867c82190bb4725,

title = "An intensive study of LPCVD silicon morphology and texture for non volatile memory",

abstract = "Results of an intensive study by means of XRD, SEM, AFM and TEM of the microstructure (i.e. the texture and morphology) of LPCVD silicon layers as a function of different process parameters are described. The influence of different deposition parameters, like partial and total pressure, doping, deposition and anneal temperature is shown. In particular the roughness of the silicon surface is investigated. The relation of surface roughness to the electrical properties of dielectrics, grown on these silicon layers, is briefly discussed.",

keywords = "IR-96424, METIS-113987",

author = "J.H. Klootwijk and \{van Kranenburg\}, H. and C. Cobianu and V. Petrescu and P.H. Woerlee and Hans Wallinga",

year = "1995",

month = sep,

day = "25",

language = "English",

publisher = "IEEE",

pages = "383--386",

booktitle = "Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95",

address = "United States",

note = "25th European Solid State Device Research Conference, ESSDERC 1995, ESSDERC ; Conference date: 25-09-1995 Through 27-09-1995",

}

Klootwijk, JH, van Kranenburg, H, Cobianu, C, Petrescu, V, Woerlee, PH & Wallinga, H 1995, An intensive study of LPCVD silicon morphology and texture for non volatile memory. in Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95. IEEE, Piscataway, NJ, USA, pp. 383-386, 25th European Solid State Device Research Conference, ESSDERC 1995, The Hague, Netherlands, 25/09/95. <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5435909>

An intensive study of LPCVD silicon morphology and texture for non volatile memory. / Klootwijk, J.H.; van Kranenburg, H.; Cobianu, C. et al.
Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95. Piscataway, NJ, USA: IEEE, 1995. p. 383-386.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - An intensive study of LPCVD silicon morphology and texture for non volatile memory

AU - Klootwijk, J.H.

AU - van Kranenburg, H.

AU - Cobianu, C.

AU - Petrescu, V.

AU - Woerlee, P.H.

AU - Wallinga, Hans

N1 - Conference code: 25

PY - 1995/9/25

Y1 - 1995/9/25

N2 - Results of an intensive study by means of XRD, SEM, AFM and TEM of the microstructure (i.e. the texture and morphology) of LPCVD silicon layers as a function of different process parameters are described. The influence of different deposition parameters, like partial and total pressure, doping, deposition and anneal temperature is shown. In particular the roughness of the silicon surface is investigated. The relation of surface roughness to the electrical properties of dielectrics, grown on these silicon layers, is briefly discussed.

AB - Results of an intensive study by means of XRD, SEM, AFM and TEM of the microstructure (i.e. the texture and morphology) of LPCVD silicon layers as a function of different process parameters are described. The influence of different deposition parameters, like partial and total pressure, doping, deposition and anneal temperature is shown. In particular the roughness of the silicon surface is investigated. The relation of surface roughness to the electrical properties of dielectrics, grown on these silicon layers, is briefly discussed.

KW - IR-96424

KW - METIS-113987

M3 - Conference contribution

SP - 383

EP - 386

BT - Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 25th European Solid State Device Research Conference, ESSDERC 1995

Y2 - 25 September 1995 through 27 September 1995

ER -

An intensive study of LPCVD silicon morphology and texture for non volatile memory

Abstract

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Keywords

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