An investigation of the interaction of N2O with the Si(111)-7 × 7 surface using AES and optical reflectometry; A comparison with O2

Enrico G. Keim, Arend van Silfhout

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    Abstract

    At 300 K, N2O decomposes into N2, leaving behind atomic oxygen at the Si(111)¿7 × 7 surface. Decomposition at two different sites is proposed, having the overall initial reaction probability: s(0) = (6.7 ± 0.7) × 106. SiOx(x not, vert, similar 1) bonds are predominantly formed, saturation occurring at monolayer coverage. This oxygen monolayer appears to completely prevent further oxygen uptake by additional N2O or O2 exposures, in contrast with the adsorption behaviour of O2 on Si(111)-7 × 7, which exhibits slow sorption beyond one monolayer.
    Original languageUndefined
    Pages (from-to)1096-1102
    JournalSurface science
    Volume152-15
    Issue number2
    DOIs
    Publication statusPublished - 1985

    Keywords

    • IR-55481

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