An investigation of the interaction of N2O with the Si(111)-7 × 7 surface using AES and optical reflectometry; A comparison with O2

Enrico G. Keim; Arend van Silfhout

doi:10.1016/0039-6028(85)90525-4

An investigation of the interaction of N2O with the Si(111)-7 × 7 surface using AES and optical reflectometry; A comparison with O2

Enrico G. Keim, Arend van Silfhout

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Abstract

At 300 K, N2O decomposes into N2, leaving behind atomic oxygen at the Si(111)¿7 × 7 surface. Decomposition at two different sites is proposed, having the overall initial reaction probability: s(0) = (6.7 ± 0.7) × 106. SiOx(x not, vert, similar 1) bonds are predominantly formed, saturation occurring at monolayer coverage. This oxygen monolayer appears to completely prevent further oxygen uptake by additional N2O or O2 exposures, in contrast with the adsorption behaviour of O2 on Si(111)-7 × 7, which exhibits slow sorption beyond one monolayer.

Original language	Undefined
Pages (from-to)	1096-1102
Journal	Surface science
Volume	152-15
Issue number	2
DOIs	https://doi.org/10.1016/0039-6028(85)90525-4
Publication status	Published - 1985

Keywords

IR-55481

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10.1016/0039-6028(85)90525-4

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Cite this

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title = "An investigation of the interaction of N2O with the Si(111)-7 × 7 surface using AES and optical reflectometry; A comparison with O2",

abstract = "At 300 K, N2O decomposes into N2, leaving behind atomic oxygen at the Si(111)¿7 × 7 surface. Decomposition at two different sites is proposed, having the overall initial reaction probability: s(0) = (6.7 ± 0.7) × 106. SiOx(x not, vert, similar 1) bonds are predominantly formed, saturation occurring at monolayer coverage. This oxygen monolayer appears to completely prevent further oxygen uptake by additional N2O or O2 exposures, in contrast with the adsorption behaviour of O2 on Si(111)-7 × 7, which exhibits slow sorption beyond one monolayer.",

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author = "Keim, {Enrico G.} and {van Silfhout}, Arend",

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T1 - An investigation of the interaction of N2O with the Si(111)-7 × 7 surface using AES and optical reflectometry; A comparison with O2

AU - Keim, Enrico G.

AU - van Silfhout, Arend

PY - 1985

Y1 - 1985

N2 - At 300 K, N2O decomposes into N2, leaving behind atomic oxygen at the Si(111)¿7 × 7 surface. Decomposition at two different sites is proposed, having the overall initial reaction probability: s(0) = (6.7 ± 0.7) × 106. SiOx(x not, vert, similar 1) bonds are predominantly formed, saturation occurring at monolayer coverage. This oxygen monolayer appears to completely prevent further oxygen uptake by additional N2O or O2 exposures, in contrast with the adsorption behaviour of O2 on Si(111)-7 × 7, which exhibits slow sorption beyond one monolayer.

AB - At 300 K, N2O decomposes into N2, leaving behind atomic oxygen at the Si(111)¿7 × 7 surface. Decomposition at two different sites is proposed, having the overall initial reaction probability: s(0) = (6.7 ± 0.7) × 106. SiOx(x not, vert, similar 1) bonds are predominantly formed, saturation occurring at monolayer coverage. This oxygen monolayer appears to completely prevent further oxygen uptake by additional N2O or O2 exposures, in contrast with the adsorption behaviour of O2 on Si(111)-7 × 7, which exhibits slow sorption beyond one monolayer.

KW - IR-55481

U2 - 10.1016/0039-6028(85)90525-4

DO - 10.1016/0039-6028(85)90525-4

M3 - Article

VL - 152-15

SP - 1096

EP - 1102

JO - Surface science

JF - Surface science

SN - 0039-6028

IS - 2

ER -