Analysis of electrothermal effects in bipolar current mirrors

V. D'Alessandro; L. K. Nanver; P. J. Zampardi; N. Rinaldi

doi:10.1109/BIPOL.2007.4351852

Analysis of electrothermal effects in bipolar current mirrors

V. D'Alessandro^*, L. K. Nanver, P. J. Zampardi, N. Rinaldi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

Abstract

An extensive electrothermal analysis of current mirrors fabricated in silicon-on-glass and GaAs bipolar technologies is presented. Experimental results demonstrate that pronounced electrothermal effects may arise, which lead not only to a poor mirroring action, but also to a thermal instability occurrence for the output transistor. A simple relation is derived for predicting the instability onset Circuit and numerical simulations are employed to provide a deep insight into the underlying physics and suggest alternative solutions to counteract the electrothermal feedback.

Original language	English
Title of host publication	Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages	127-130
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2007.4351852
Publication status	Published - 1 Dec 2007
Externally published	Yes
Event	IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007 - Boston, MA, United States Duration: 30 Sept 2007 → 2 Oct 2007 https://bcicts.org/

Conference

Conference	IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007
Abbreviated title	BCTM 2007
Country/Territory	United States
City	Boston, MA
Period	30/09/07 → 2/10/07
Internet address	https://bcicts.org/

Keywords

Analog circuits
Bipolar Junction Transistor (BJT)
Current mirror
Electrothermal simulation
Heterojunction Bipolar Transistor (HBT)
Impact ionization
Thermal instability

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10.1109/BIPOL.2007.4351852

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@inproceedings{4475a82ea4624f6fb03eadcda5d7c87b,

title = "Analysis of electrothermal effects in bipolar current mirrors",

abstract = "An extensive electrothermal analysis of current mirrors fabricated in silicon-on-glass and GaAs bipolar technologies is presented. Experimental results demonstrate that pronounced electrothermal effects may arise, which lead not only to a poor mirroring action, but also to a thermal instability occurrence for the output transistor. A simple relation is derived for predicting the instability onset Circuit and numerical simulations are employed to provide a deep insight into the underlying physics and suggest alternative solutions to counteract the electrothermal feedback.",

keywords = "Analog circuits, Bipolar Junction Transistor (BJT), Current mirror, Electrothermal simulation, Heterojunction Bipolar Transistor (HBT), Impact ionization, Thermal instability",

author = "V. D'Alessandro and Nanver, {L. K.} and Zampardi, {P. J.} and N. Rinaldi",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/BIPOL.2007.4351852",

language = "English",

isbn = "9781424410194",

pages = "127--130",

booktitle = "Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

note = "IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007, BCTM 2007 ; Conference date: 30-09-2007 Through 02-10-2007",

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TY - GEN

T1 - Analysis of electrothermal effects in bipolar current mirrors

AU - D'Alessandro, V.

AU - Nanver, L. K.

AU - Zampardi, P. J.

AU - Rinaldi, N.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - An extensive electrothermal analysis of current mirrors fabricated in silicon-on-glass and GaAs bipolar technologies is presented. Experimental results demonstrate that pronounced electrothermal effects may arise, which lead not only to a poor mirroring action, but also to a thermal instability occurrence for the output transistor. A simple relation is derived for predicting the instability onset Circuit and numerical simulations are employed to provide a deep insight into the underlying physics and suggest alternative solutions to counteract the electrothermal feedback.

AB - An extensive electrothermal analysis of current mirrors fabricated in silicon-on-glass and GaAs bipolar technologies is presented. Experimental results demonstrate that pronounced electrothermal effects may arise, which lead not only to a poor mirroring action, but also to a thermal instability occurrence for the output transistor. A simple relation is derived for predicting the instability onset Circuit and numerical simulations are employed to provide a deep insight into the underlying physics and suggest alternative solutions to counteract the electrothermal feedback.

KW - Analog circuits

KW - Bipolar Junction Transistor (BJT)

KW - Current mirror

KW - Electrothermal simulation

KW - Heterojunction Bipolar Transistor (HBT)

KW - Impact ionization

KW - Thermal instability

UR - http://www.scopus.com/inward/record.url?scp=39049123210&partnerID=8YFLogxK

U2 - 10.1109/BIPOL.2007.4351852

DO - 10.1109/BIPOL.2007.4351852

M3 - Conference contribution

AN - SCOPUS:39049123210

SN - 9781424410194

SP - 127

EP - 130

BT - Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

T2 - IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007

Y2 - 30 September 2007 through 2 October 2007

ER -

Analysis of electrothermal effects in bipolar current mirrors

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