Analysis of electrothermal effects in bipolar current mirrors

V. D'Alessandro*, L. K. Nanver, P. J. Zampardi, N. Rinaldi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

An extensive electrothermal analysis of current mirrors fabricated in silicon-on-glass and GaAs bipolar technologies is presented. Experimental results demonstrate that pronounced electrothermal effects may arise, which lead not only to a poor mirroring action, but also to a thermal instability occurrence for the output transistor. A simple relation is derived for predicting the instability onset Circuit and numerical simulations are employed to provide a deep insight into the underlying physics and suggest alternative solutions to counteract the electrothermal feedback.

Original languageEnglish
Title of host publicationProceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages127-130
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2007
Externally publishedYes
EventIEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007 - Boston, MA, United States
Duration: 30 Sep 20072 Oct 2007
https://bcicts.org/

Conference

ConferenceIEEE Bipolar/BiCMOS Circuits and Technology Meeting 2007
Abbreviated titleBCTM 2007
CountryUnited States
CityBoston, MA
Period30/09/072/10/07
Internet address

Keywords

  • Analog circuits
  • Bipolar Junction Transistor (BJT)
  • Current mirror
  • Electrothermal simulation
  • Heterojunction Bipolar Transistor (HBT)
  • Impact ionization
  • Thermal instability

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