Abstract
With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide. The low-frequency noise
decreases, if the transistors are switched "off" periodically (switched biased conditions). In this work, we have studied both p-MOS and n-MOS devices. The small devices (W/L=10:0.3) have a few trapping states, which is proven by the Lorentzian nature of the power spectrum. The RTS were measured under both; constant biased and switched biased conditions. A clear change in the RTS parameters;the mean capture time (?c) and the mean emission time (?e), under switched biased conditions, has been observed, as compared to the values in the constant bias case.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002 |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 42-45 |
| Number of pages | 4 |
| ISBN (Print) | 90-73461-33-2 |
| Publication status | Published - 27 Nov 2002 |
| Event | 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands Duration: 27 Nov 2002 → 28 Nov 2002 Conference number: 5 |
Workshop
| Workshop | 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 |
|---|---|
| Abbreviated title | SAFE |
| Country | Netherlands |
| City | Veldhoven |
| Period | 27/11/02 → 28/11/02 |
Keywords
- Noise reduction
- Switched bias
- Random telegraph signals
- MOSFET LF noise
- 1/f Noise