Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs

Jay Kolhatkar, Cora Salm, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide. The low-frequency noise decreases, if the transistors are switched "off" periodically (switched biased conditions). In this work, we have studied both p-MOS and n-MOS devices. The small devices (W/L=10:0.3) have a few trapping states, which is proven by the Lorentzian nature of the power spectrum. The RTS were measured under both; constant biased and switched biased conditions. A clear change in the RTS parameters;the mean capture time (?c) and the mean emission time (?e), under switched biased conditions, has been observed, as compared to the values in the constant bias case.
    Original languageEnglish
    Title of host publicationProceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages42-45
    Number of pages4
    ISBN (Print)90-73461-33-2
    Publication statusPublished - 27 Nov 2002
    Event5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands
    Duration: 27 Nov 200228 Nov 2002
    Conference number: 5

    Workshop

    Workshop5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0228/11/02

    Keywords

    • Noise reduction
    • Switched bias
    • Random telegraph signals
    • MOSFET LF noise
    • 1/f Noise

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  • Cite this

    Kolhatkar, J., Salm, C., & Wallinga, H. (2002). Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs. In Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002 (pp. 42-45). Utrecht, The Netherlands: STW.