Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs

Jay Kolhatkar; Cora Salm; Hans Wallinga

Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs

Jay Kolhatkar, Cora Salm, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide. The low-frequency noise decreases, if the transistors are switched "off" periodically (switched biased conditions). In this work, we have studied both p-MOS and n-MOS devices. The small devices (W/L=10:0.3) have a few trapping states, which is proven by the Lorentzian nature of the power spectrum. The RTS were measured under both; constant biased and switched biased conditions. A clear change in the RTS parameters;the mean capture time (?c) and the mean emission time (?e), under switched biased conditions, has been observed, as compared to the values in the constant bias case.

Original language	English
Title of host publication	Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	42-45
Number of pages	4
ISBN (Print)	90-73461-33-2
Publication status	Published - 27 Nov 2002
Event	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands Duration: 27 Nov 2002 → 28 Nov 2002 Conference number: 5

Workshop

Workshop	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Abbreviated title	SAFE
Country	Netherlands
City	Veldhoven
Period	27/11/02 → 28/11/02

Keywords

Noise reduction
Switched bias
Random telegraph signals
MOSFET LF noise
1/f Noise

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Cite this

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title = "Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs",

abstract = "With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide. The low-frequency noise decreases, if the transistors are switched {"}off{"} periodically (switched biased conditions). In this work, we have studied both p-MOS and n-MOS devices. The small devices (W/L=10:0.3) have a few trapping states, which is proven by the Lorentzian nature of the power spectrum. The RTS were measured under both; constant biased and switched biased conditions. A clear change in the RTS parameters;the mean capture time (?c) and the mean emission time (?e), under switched biased conditions, has been observed, as compared to the values in the constant bias case.",

keywords = "Noise reduction, Switched bias, Random telegraph signals, MOSFET LF noise, 1/f Noise",

author = "Jay Kolhatkar and Cora Salm and Hans Wallinga",

year = "2002",

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language = "English",

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booktitle = "Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002",

publisher = "STW",

note = "5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, SAFE ; Conference date: 27-11-2002 Through 28-11-2002",

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Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs. / Kolhatkar, Jay; Salm, Cora; Wallinga, Hans.

Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands : STW, 2002. p. 42-45.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs

AU - Kolhatkar, Jay

AU - Salm, Cora

AU - Wallinga, Hans

N1 - Conference code: 5

PY - 2002/11/27

Y1 - 2002/11/27

N2 - With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide. The low-frequency noise decreases, if the transistors are switched "off" periodically (switched biased conditions). In this work, we have studied both p-MOS and n-MOS devices. The small devices (W/L=10:0.3) have a few trapping states, which is proven by the Lorentzian nature of the power spectrum. The RTS were measured under both; constant biased and switched biased conditions. A clear change in the RTS parameters;the mean capture time (?c) and the mean emission time (?e), under switched biased conditions, has been observed, as compared to the values in the constant bias case.

AB - With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide. The low-frequency noise decreases, if the transistors are switched "off" periodically (switched biased conditions). In this work, we have studied both p-MOS and n-MOS devices. The small devices (W/L=10:0.3) have a few trapping states, which is proven by the Lorentzian nature of the power spectrum. The RTS were measured under both; constant biased and switched biased conditions. A clear change in the RTS parameters;the mean capture time (?c) and the mean emission time (?e), under switched biased conditions, has been observed, as compared to the values in the constant bias case.

KW - Noise reduction

KW - Switched bias

KW - Random telegraph signals

KW - MOSFET LF noise

KW - 1/f Noise

M3 - Conference contribution

SN - 90-73461-33-2

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EP - 45

BT - Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002

PB - STW

CY - Utrecht, The Netherlands

T2 - 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

Y2 - 27 November 2002 through 28 November 2002

ER -