With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide. The low-frequency noise decreases, if the transistors are switched "off" periodically (switched biased conditions). In this work, we have studied both p-MOS and n-MOS devices. The small devices (W/L=10:0.3) have a few trapping states, which is proven by the Lorentzian nature of the power spectrum. The RTS were measured under both; constant biased and switched biased conditions. A clear change in the RTS parameters;the mean capture time (?c) and the mean emission time (?e), under switched biased conditions, has been observed, as compared to the values in the constant bias case.
|Title of host publication||Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||4|
|Publication status||Published - 27 Nov 2002|
|Event||5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands|
Duration: 27 Nov 2002 → 28 Nov 2002
Conference number: 5
|Workshop||5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002|
|Period||27/11/02 → 28/11/02|
- Noise reduction
- Switched bias
- Random telegraph signals
- MOSFET LF noise
- 1/f Noise
Kolhatkar, J., Salm, C., & Wallinga, H. (2002). Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs. In Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002 (pp. 42-45). Utrecht, The Netherlands: STW.