Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors

N. Golo-Tosic, F.G. Kuper, A.J. Mouthaan

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    Abstract

    Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1
    Original languageUndefined
    Pages (from-to)1012-1018
    Number of pages7
    JournalIEEE transactions on electron devices
    Volume49
    Issue number6
    DOIs
    Publication statusPublished - 1 Jun 2002

    Keywords

    • Electric breakdown
    • EWI-15574
    • liquid crystal displays
    • IR-45172
    • semi-conductor device reliability
    • METIS-211594
    • thin-film devices

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