Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors

N. Golo-Tosic; F.G. Kuper; A.J. Mouthaan

doi:10.1109/TED.2002.1003722

Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors

N. Golo-Tosic
, F.G. Kuper
, A.J. Mouthaan

Research output: Contribution to journal › Article › Academic › peer-review

19 Citations (Scopus)

256 Downloads (Pure)

Abstract

Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1

Original language	English
Pages (from-to)	1012-1018
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	6
DOIs	https://doi.org/10.1109/TED.2002.1003722
Publication status	Published - 1 Jun 2002

Keywords

n/a OA procedure
Electric breakdown
Liquid crystal displays
Semi-conductor device reliability
Thin-film devices

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10.1109/TED.2002.1003722

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@article{4737f66e23f34908ad64a8cfd75f802a,

title = "Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors",

abstract = "Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1",

keywords = "n/a OA procedure, Electric breakdown, Liquid crystal displays, Semi-conductor device reliability, Thin-film devices",

author = "N. Golo-Tosic and F.G. Kuper and A.J. Mouthaan",

year = "2002",

month = jun,

day = "1",

doi = "10.1109/TED.2002.1003722",

language = "English",

volume = "49",

pages = "1012--1018",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "6",

}

TY - JOUR

T1 - Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors

AU - Golo-Tosic, N.

AU - Kuper, F.G.

AU - Mouthaan, A.J.

PY - 2002/6/1

Y1 - 2002/6/1

N2 - Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1

AB - Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1

KW - n/a OA procedure

KW - Electric breakdown

KW - Liquid crystal displays

KW - Semi-conductor device reliability

KW - Thin-film devices

U2 - 10.1109/TED.2002.1003722

DO - 10.1109/TED.2002.1003722

M3 - Article

SN - 0018-9383

VL - 49

SP - 1012

EP - 1018

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors

Abstract

Keywords

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