Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter

L. C M Van Den Oever; L. K. Nanver; J. W. Slotboom

doi:10.1109/ESSDERC.2000.194841

Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter

L. C M Van Den Oever^*, L. K. Nanver, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

An analysis is presented of the emitter charge storage in SiGe HBTs with a lightly doped emitter (LDE) and the mechanisms that lead to the experimentally observed reduction of the f_Tare identified. The charge storage in the LDE is important for doping concentrations below 3×10¹⁷cm^-3and scales with the thickness. It also depends on the Gummel number of the base and the doping concentration of the collector epilayer. For LDE concentrations below 10¹⁷cm^-3and collector currents above 10⁴A/cm²the gradient of the hole distribution can even become negative and cause excessive charge storage. However, under very high injection-beyond the f_T,max-the LDE storage decreases which gives a second peak in the f_Tcharacteristics. In order to achieve the maximum f_T, the LDE must be thin (= 50 nm) and highly doped (= 3×10¹⁷cm^-3).

Original language	English
Title of host publication	30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Publisher	IEEE
Pages	568-571
Number of pages	4
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194841
Publication status	Published - 1 Jan 2000
Externally published	Yes
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000 Conference number: 30

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated title	ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00

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10.1109/ESSDERC.2000.194841

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Van Den Oever, L. C. M., Nanver, L. K., & Slotboom, J. W. (2000). Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), 30th European Solid-State Device Research Conference (pp. 568-571). Article 1503771 IEEE. https://doi.org/10.1109/ESSDERC.2000.194841

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title = "Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter",

abstract = "An analysis is presented of the emitter charge storage in SiGe HBTs with a lightly doped emitter (LDE) and the mechanisms that lead to the experimentally observed reduction of the fTare identified. The charge storage in the LDE is important for doping concentrations below 3×1017cm-3and scales with the thickness. It also depends on the Gummel number of the base and the doping concentration of the collector epilayer. For LDE concentrations below 1017cm-3and collector currents above 104A/cm2the gradient of the hole distribution can even become negative and cause excessive charge storage. However, under very high injection-beyond the fT,max-the LDE storage decreases which gives a second peak in the fTcharacteristics. In order to achieve the maximum fT, the LDE must be thin (= 50 nm) and highly doped (= 3×1017cm-3).",

author = "{Van Den Oever}, {L. C M} and Nanver, {L. K.} and Slotboom, {J. W.}",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2000.194841",

language = "English",

isbn = "9782863322482",

pages = "568--571",

editor = "H. Grunbacher and Crean, {Gabriel M.} and Lane, {W. A.} and McCabe, {Frank A.}",

booktitle = "30th European Solid-State Device Research Conference",

publisher = "IEEE",

address = "United States",

note = "30th European Solid-State Device Research Conference, ESSDERC 2000, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

}

Van Den Oever, LCM, Nanver, LK & Slotboom, JW 2000, Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), 30th European Solid-State Device Research Conference., 1503771, IEEE, pp. 568-571, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194841

Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter. / Van Den Oever, L. C M; Nanver, L. K.; Slotboom, J. W.
30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE, 2000. p. 568-571 1503771.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter

AU - Van Den Oever, L. C M

AU - Nanver, L. K.

AU - Slotboom, J. W.

N1 - Conference code: 30

PY - 2000/1/1

Y1 - 2000/1/1

N2 - An analysis is presented of the emitter charge storage in SiGe HBTs with a lightly doped emitter (LDE) and the mechanisms that lead to the experimentally observed reduction of the fTare identified. The charge storage in the LDE is important for doping concentrations below 3×1017cm-3and scales with the thickness. It also depends on the Gummel number of the base and the doping concentration of the collector epilayer. For LDE concentrations below 1017cm-3and collector currents above 104A/cm2the gradient of the hole distribution can even become negative and cause excessive charge storage. However, under very high injection-beyond the fT,max-the LDE storage decreases which gives a second peak in the fTcharacteristics. In order to achieve the maximum fT, the LDE must be thin (= 50 nm) and highly doped (= 3×1017cm-3).

AB - An analysis is presented of the emitter charge storage in SiGe HBTs with a lightly doped emitter (LDE) and the mechanisms that lead to the experimentally observed reduction of the fTare identified. The charge storage in the LDE is important for doping concentrations below 3×1017cm-3and scales with the thickness. It also depends on the Gummel number of the base and the doping concentration of the collector epilayer. For LDE concentrations below 1017cm-3and collector currents above 104A/cm2the gradient of the hole distribution can even become negative and cause excessive charge storage. However, under very high injection-beyond the fT,max-the LDE storage decreases which gives a second peak in the fTcharacteristics. In order to achieve the maximum fT, the LDE must be thin (= 50 nm) and highly doped (= 3×1017cm-3).

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DO - 10.1109/ESSDERC.2000.194841

M3 - Conference contribution

AN - SCOPUS:0006608220

SN - 9782863322482

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EP - 571

BT - 30th European Solid-State Device Research Conference

A2 - Grunbacher, H.

A2 - Crean, Gabriel M.

A2 - Lane, W. A.

A2 - McCabe, Frank A.

PB - IEEE

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

Y2 - 11 September 2000 through 13 September 2000

ER -

Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter

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