Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter

L. C M Van Den Oever*, L. K. Nanver, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

An analysis is presented of the emitter charge storage in SiGe HBTs with a lightly doped emitter (LDE) and the mechanisms that lead to the experimentally observed reduction of the fTare identified. The charge storage in the LDE is important for doping concentrations below 3×1017cm-3and scales with the thickness. It also depends on the Gummel number of the base and the doping concentration of the collector epilayer. For LDE concentrations below 1017cm-3and collector currents above 104A/cm2the gradient of the hole distribution can even become negative and cause excessive charge storage. However, under very high injection-beyond the fT,max-the LDE storage decreases which gives a second peak in the fTcharacteristics. In order to achieve the maximum fT, the LDE must be thin (= 50 nm) and highly doped (= 3×1017cm-3).

Original languageEnglish
Title of host publication30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
PublisherIEEE
Pages568-571
Number of pages4
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 1 Jan 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 11 Sept 200013 Sept 2000
Conference number: 30

Conference

Conference30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated titleESSDERC 2000
Country/TerritoryIreland
CityCork
Period11/09/0013/09/00

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