A high-performance lateral polysilicon photodiode was designed in standard 0.18 um CMOS technology. The device has a frequency bandwidth far in the GHz range: the measured bandwidth of the poly photodiode was 6 GHz, which gure was limited by the measurement equipment. The high intrinsic (physical) bandwidth is due to a short excess carrier lifetime. The external (electrical) bandwidth is also high because of a very small parasitic capacitance (<0.1 pF). This is the best bandwidth performance among all reported diodes designed in a standard CMOS. The quantum efficiency of this poly photodiode is 0.2% due to the very small light sensitive diode volume. The diode active area is limited by a narrow depletion region and its depth by the technology.
|Number of pages||5|
|Publication status||Published - Nov 2003|
|Event||14th ProRISC Workshop on Circuits, Systems and Signal Processing 2003 - Veldhoven, Netherlands|
Duration: 25 Nov 2003 → 27 Nov 2003
Conference number: 14
|Workshop||14th ProRISC Workshop on Circuits, Systems and Signal Processing 2003|
|Period||25/11/03 → 27/11/03|