Analysis of the high-speed polysilicon photodetector in fully standard CMOS technology

S. Radovanovic; Anne J. Annema; Bram Nauta

Analysis of the high-speed polysilicon photodetector in fully standard CMOS technology

S. Radovanovic, Anne J. Annema, Bram Nauta

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Abstract

A high-performance lateral polysilicon photodiode was designed in standard 0.18 um CMOS technology. The device has a frequency bandwidth far in the GHz range: the measured bandwidth of the poly photodiode was 6 GHz, which gure was limited by the measurement equipment. The high intrinsic (physical) bandwidth is due to a short excess carrier lifetime. The external (electrical) bandwidth is also high because of a very small parasitic capacitance (<0.1 pF). This is the best bandwidth performance among all reported diodes designed in a standard CMOS. The quantum efficiency of this poly photodiode is 0.2% due to the very small light sensitive diode volume. The diode active area is limited by a narrow depletion region and its depth by the technology.

Original language	Undefined
Pages	260-264
Number of pages	5
Publication status	Published - Nov 2003
Event	14th ProRISC Workshop on Circuits, Systems and Signal Processing 2003 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 27 Nov 2003 Conference number: 14

Workshop

Workshop	14th ProRISC Workshop on Circuits, Systems and Signal Processing 2003
Abbreviated title	ProRISC
Country/Territory	Netherlands
City	Veldhoven
Period	25/11/03 → 27/11/03

Keywords

IR-67449
EWI-14449

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Cite this

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title = "Analysis of the high-speed polysilicon photodetector in fully standard CMOS technology",

abstract = "A high-performance lateral polysilicon photodiode was designed in standard 0.18 um CMOS technology. The device has a frequency bandwidth far in the GHz range: the measured bandwidth of the poly photodiode was 6 GHz, which gure was limited by the measurement equipment. The high intrinsic (physical) bandwidth is due to a short excess carrier lifetime. The external (electrical) bandwidth is also high because of a very small parasitic capacitance (<0.1 pF). This is the best bandwidth performance among all reported diodes designed in a standard CMOS. The quantum efficiency of this poly photodiode is 0.2% due to the very small light sensitive diode volume. The diode active area is limited by a narrow depletion region and its depth by the technology.",

keywords = "IR-67449, EWI-14449",

author = "S. Radovanovic and Annema, {Anne J.} and Bram Nauta",

year = "2003",

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pages = "260--264",

note = "14th ProRISC Workshop on Circuits, Systems and Signal Processing 2003 ; Conference date: 25-11-2003 Through 27-11-2003",

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TY - CONF

T1 - Analysis of the high-speed polysilicon photodetector in fully standard CMOS technology

AU - Radovanovic, S.

AU - Annema, Anne J.

AU - Nauta, Bram

N1 - Conference code: 14

PY - 2003/11

Y1 - 2003/11

N2 - A high-performance lateral polysilicon photodiode was designed in standard 0.18 um CMOS technology. The device has a frequency bandwidth far in the GHz range: the measured bandwidth of the poly photodiode was 6 GHz, which gure was limited by the measurement equipment. The high intrinsic (physical) bandwidth is due to a short excess carrier lifetime. The external (electrical) bandwidth is also high because of a very small parasitic capacitance (<0.1 pF). This is the best bandwidth performance among all reported diodes designed in a standard CMOS. The quantum efficiency of this poly photodiode is 0.2% due to the very small light sensitive diode volume. The diode active area is limited by a narrow depletion region and its depth by the technology.

AB - A high-performance lateral polysilicon photodiode was designed in standard 0.18 um CMOS technology. The device has a frequency bandwidth far in the GHz range: the measured bandwidth of the poly photodiode was 6 GHz, which gure was limited by the measurement equipment. The high intrinsic (physical) bandwidth is due to a short excess carrier lifetime. The external (electrical) bandwidth is also high because of a very small parasitic capacitance (<0.1 pF). This is the best bandwidth performance among all reported diodes designed in a standard CMOS. The quantum efficiency of this poly photodiode is 0.2% due to the very small light sensitive diode volume. The diode active area is limited by a narrow depletion region and its depth by the technology.

KW - IR-67449

KW - EWI-14449

M3 - Paper

SP - 260

EP - 264

T2 - 14th ProRISC Workshop on Circuits, Systems and Signal Processing 2003

Y2 - 25 November 2003 through 27 November 2003

ER -