Analysis of the high-speed polysilicon photodetector in fully standard CMOS technology

S. Radovanovic, Anne J. Annema, Bram Nauta

    Research output: Contribution to conferencePaper

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    Abstract

    A high-performance lateral polysilicon photodiode was designed in standard 0.18 um CMOS technology. The device has a frequency bandwidth far in the GHz range: the measured bandwidth of the poly photodiode was 6 GHz, which gure was limited by the measurement equipment. The high intrinsic (physical) bandwidth is due to a short excess carrier lifetime. The external (electrical) bandwidth is also high because of a very small parasitic capacitance (<0.1 pF). This is the best bandwidth performance among all reported diodes designed in a standard CMOS. The quantum efficiency of this poly photodiode is 0.2% due to the very small light sensitive diode volume. The diode active area is limited by a narrow depletion region and its depth by the technology.
    Original languageUndefined
    Pages260-264
    Number of pages5
    Publication statusPublished - Nov 2003
    Event14th ProRISC Workshop on Circuits, Systems and Signal Processing 2003 - Veldhoven, Netherlands
    Duration: 25 Nov 200327 Nov 2003
    Conference number: 14

    Workshop

    Workshop14th ProRISC Workshop on Circuits, Systems and Signal Processing 2003
    Abbreviated titleProRISC
    CountryNetherlands
    CityVeldhoven
    Period25/11/0327/11/03

    Keywords

    • IR-67449
    • EWI-14449

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