Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs

Raymond Josephus Engelbart Hueting; Anco Heringa

doi:10.1109/TED.2006.876284

Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs

Raymond Josephus Engelbart Hueting, Anco Heringa

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Abstract

In this work, we analyzed the subthreshold current (ID) of pocket implanted MOSFETs using extensive device simulations and experimental data.We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.

Original language	Undefined
Pages (from-to)	1641-1646
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	2/7
DOIs	https://doi.org/10.1109/TED.2006.876284
Publication status	Published - 7 Jul 2006

Keywords

EWI-2788
SC-DPM: Device Physics and Modeling
IR-57675
METIS-238017

Access to Document

10.1109/TED.2006.876284

Cite this

@article{3fd4b51f56734c87bab626334ed76f9c,

title = "Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs",

abstract = "In this work, we analyzed the subthreshold current (ID) of pocket implanted MOSFETs using extensive device simulations and experimental data.We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.",

keywords = "EWI-2788, SC-DPM: Device Physics and Modeling, IR-57675, METIS-238017",

author = "Hueting, {Raymond Josephus Engelbart} and Anco Heringa",

note = "10.1109/TED.2006.876284 ",

year = "2006",

month = jul,

day = "7",

doi = "10.1109/TED.2006.876284",

language = "Undefined",

volume = "53",

pages = "1641--1646",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "2/7",

}

TY - JOUR

T1 - Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs

AU - Hueting, Raymond Josephus Engelbart

AU - Heringa, Anco

N1 - 10.1109/TED.2006.876284

PY - 2006/7/7

Y1 - 2006/7/7

N2 - In this work, we analyzed the subthreshold current (ID) of pocket implanted MOSFETs using extensive device simulations and experimental data.We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.

AB - In this work, we analyzed the subthreshold current (ID) of pocket implanted MOSFETs using extensive device simulations and experimental data.We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.

KW - EWI-2788

KW - SC-DPM: Device Physics and Modeling

KW - IR-57675

KW - METIS-238017

U2 - 10.1109/TED.2006.876284

DO - 10.1109/TED.2006.876284

M3 - Article

SN - 0018-9383

VL - 53

SP - 1641

EP - 1646

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2/7

ER -