Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices

Saijun Mao, Jelena Popović, Jan Abraham Ferreira

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper investigates the analysis of the transformer modularization structure for the high frequency isolated high voltage (HV) generator with silicon carbide (SiC) devices. The modularization of the HV transformers provide advantages such as low insulation stress, low dielectric loss, distributed thermal stress and size reduction at high frequency without any sacrifice to the efficiency for the HV generator. The equivalent circuit diagram is derived to better describe the characteristics of the modular transformer architectures. Finally, a 300kHz, 8kW 160kV output voltage HV generator prototype with 1.2kV SiC MOSFETs for the inverter and 1.2kV SiC Schottky diodes for the voltage multiplier is built as a technology demonstrator to validate the proposed transformer modularization concept.
Original languageEnglish
Title of host publication2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)
Place of PublicationPiscataway, NJ
PublisherIEEE Power Electronics Society
Number of pages8
ISBN (Electronic)978-9-0758-1536-8
ISBN (Print)978-1-7281-9807-1
DOIs
Publication statusPublished - 7 Oct 2020
Event2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) - Lyon, France
Duration: 7 Sep 202011 Sep 2021

Conference

Conference2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)
CountryFrance
CityLyon
Period7/09/2011/09/21

Keywords

  • High frequency
  • High voltage generator
  • Silicon carbide
  • Transformer

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