Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices

Saijun Mao; Jelena  Popović; Jan Abraham Ferreira

doi:10.23919/EPE20ECCEEurope43536.2020.9215794

Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices

Saijun Mao, Jelena Popović, Jan Abraham Ferreira

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

78 Downloads (Pure)

Abstract

This paper investigates the analysis of the transformer modularization structure for the high frequency isolated high voltage (HV) generator with silicon carbide (SiC) devices. The modularization of the HV transformers provide advantages such as low insulation stress, low dielectric loss, distributed thermal stress and size reduction at high frequency without any sacrifice to the efficiency for the HV generator. The equivalent circuit diagram is derived to better describe the characteristics of the modular transformer architectures. Finally, a 300kHz, 8kW 160kV output voltage HV generator prototype with 1.2kV SiC MOSFETs for the inverter and 1.2kV SiC Schottky diodes for the voltage multiplier is built as a technology demonstrator to validate the proposed transformer modularization concept.

Original language	English
Title of host publication	2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Number of pages	8
ISBN (Electronic)	978-9-0758-1536-8
ISBN (Print)	978-1-7281-9807-1
DOIs	https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215794
Publication status	Published - 7 Oct 2020
Event	22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe - Lyon (Virtual), France Duration: 7 Sept 2020 → 11 Sept 2020 Conference number: 22

Conference

Conference	22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
Abbreviated title	EPE 2020 ECCE Europe
Country/Territory	France
City	Lyon (Virtual)
Period	7/09/20 → 11/09/20

Keywords

High frequency
High voltage generator
Silicon carbide
Transformer
22/2 OA procedure

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10.23919/EPE20ECCEEurope43536.2020.9215794

Mao2020analysisFinal published version, 368 KBLicence: Taverne

Cite this

@inproceedings{0081f9727cb94ec59c95b8fb59ccd395,

title = "Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices",

abstract = "This paper investigates the analysis of the transformer modularization structure for the high frequency isolated high voltage (HV) generator with silicon carbide (SiC) devices. The modularization of the HV transformers provide advantages such as low insulation stress, low dielectric loss, distributed thermal stress and size reduction at high frequency without any sacrifice to the efficiency for the HV generator. The equivalent circuit diagram is derived to better describe the characteristics of the modular transformer architectures. Finally, a 300kHz, 8kW 160kV output voltage HV generator prototype with 1.2kV SiC MOSFETs for the inverter and 1.2kV SiC Schottky diodes for the voltage multiplier is built as a technology demonstrator to validate the proposed transformer modularization concept.",

keywords = "High frequency, High voltage generator, Silicon carbide, Transformer, 22/2 OA procedure",

author = "Saijun Mao and Jelena Popovi{\'c} and Ferreira, {Jan Abraham}",

year = "2020",

month = oct,

day = "7",

doi = "10.23919/EPE20ECCEEurope43536.2020.9215794",

language = "English",

isbn = "978-1-7281-9807-1",

booktitle = "2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)",

publisher = "IEEE",

address = "United States",

note = "22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe, EPE 2020 ECCE Europe ; Conference date: 07-09-2020 Through 11-09-2020",

}

Mao, S, Popović, J & Ferreira, JA 2020, Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices. in 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)., 9215794, IEEE, Piscataway, NJ, 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe, Lyon (Virtual), France, 7/09/20. https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215794

Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices. / Mao, Saijun; Popović, Jelena ; Ferreira, Jan Abraham.
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe). Piscataway, NJ: IEEE, 2020. 9215794.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices

AU - Mao, Saijun

AU - Popović, Jelena

AU - Ferreira, Jan Abraham

N1 - Conference code: 22

PY - 2020/10/7

Y1 - 2020/10/7

N2 - This paper investigates the analysis of the transformer modularization structure for the high frequency isolated high voltage (HV) generator with silicon carbide (SiC) devices. The modularization of the HV transformers provide advantages such as low insulation stress, low dielectric loss, distributed thermal stress and size reduction at high frequency without any sacrifice to the efficiency for the HV generator. The equivalent circuit diagram is derived to better describe the characteristics of the modular transformer architectures. Finally, a 300kHz, 8kW 160kV output voltage HV generator prototype with 1.2kV SiC MOSFETs for the inverter and 1.2kV SiC Schottky diodes for the voltage multiplier is built as a technology demonstrator to validate the proposed transformer modularization concept.

AB - This paper investigates the analysis of the transformer modularization structure for the high frequency isolated high voltage (HV) generator with silicon carbide (SiC) devices. The modularization of the HV transformers provide advantages such as low insulation stress, low dielectric loss, distributed thermal stress and size reduction at high frequency without any sacrifice to the efficiency for the HV generator. The equivalent circuit diagram is derived to better describe the characteristics of the modular transformer architectures. Finally, a 300kHz, 8kW 160kV output voltage HV generator prototype with 1.2kV SiC MOSFETs for the inverter and 1.2kV SiC Schottky diodes for the voltage multiplier is built as a technology demonstrator to validate the proposed transformer modularization concept.

KW - High frequency

KW - High voltage generator

KW - Silicon carbide

KW - Transformer

KW - 22/2 OA procedure

U2 - 10.23919/EPE20ECCEEurope43536.2020.9215794

DO - 10.23919/EPE20ECCEEurope43536.2020.9215794

M3 - Conference contribution

SN - 978-1-7281-9807-1

BT - 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

PB - IEEE

CY - Piscataway, NJ

T2 - 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe

Y2 - 7 September 2020 through 11 September 2020

ER -

Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices

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