Abstract
This paper investigates the analysis of the transformer modularization structure for the high frequency isolated high voltage (HV) generator with silicon carbide (SiC) devices. The modularization of the HV transformers provide advantages such as low insulation stress, low dielectric loss, distributed thermal stress and size reduction at high frequency without any sacrifice to the efficiency for the HV generator. The equivalent circuit diagram is derived to better describe the characteristics of the modular transformer architectures. Finally, a 300kHz, 8kW 160kV output voltage HV generator prototype with 1.2kV SiC MOSFETs for the inverter and 1.2kV SiC Schottky diodes for the voltage multiplier is built as a technology demonstrator to validate the proposed transformer modularization concept.
Original language | English |
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Title of host publication | 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Number of pages | 8 |
ISBN (Electronic) | 978-9-0758-1536-8 |
ISBN (Print) | 978-1-7281-9807-1 |
DOIs | |
Publication status | Published - 7 Oct 2020 |
Event | 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe - Lyon (Virtual), France Duration: 7 Sept 2020 → 11 Sept 2020 Conference number: 22 |
Conference
Conference | 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe |
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Abbreviated title | EPE 2020 ECCE Europe |
Country/Territory | France |
City | Lyon (Virtual) |
Period | 7/09/20 → 11/09/20 |
Keywords
- High frequency
- High voltage generator
- Silicon carbide
- Transformer
- 22/2 OA procedure