Analytical carrier transport model for arbitrarily shallow p-n junctions

Miloš Popadić; Gianpaolo Lorito; Lis K. Nanver

doi:10.1109/ICMEL.2008.4559246

Analytical carrier transport model for arbitrarily shallow p-n junctions

Miloš Popadić^*, Gianpaolo Lorito, Lis K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

This paper presents for the first time an analytical model of arbitrarily shallow p-n junctions. Depending on the junction depth, electrical characteristics of ultra-shallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. Therefore, this model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultra-shallow n⁺-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

Original language	English
Title of host publication	2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008
Publisher	IEEE
Pages	155-158
Number of pages	4
ISBN (Print)	978-1-4244-1882-4
DOIs	https://doi.org/10.1109/ICMEL.2008.4559246
Publication status	Published - 19 Sept 2008
Externally published	Yes
Event	26th International Conference on Microelectronics, MIEL 2008 - Nis, Serbia Duration: 11 May 2008 → 14 May 2008

Conference

Conference	26th International Conference on Microelectronics, MIEL 2008
Abbreviated title	MIEL 2008
Country/Territory	Serbia
City	Nis
Period	11/05/08 → 14/05/08

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10.1109/ICMEL.2008.4559246

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@inproceedings{038f90534dff4619ab22c678390ee297,

title = "Analytical carrier transport model for arbitrarily shallow p-n junctions",

abstract = "This paper presents for the first time an analytical model of arbitrarily shallow p-n junctions. Depending on the junction depth, electrical characteristics of ultra-shallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. Therefore, this model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultra-shallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.",

author = "Milo{\v s} Popadi{\'c} and Gianpaolo Lorito and Nanver, {Lis K.}",

year = "2008",

month = sep,

day = "19",

doi = "10.1109/ICMEL.2008.4559246",

language = "English",

isbn = "978-1-4244-1882-4",

pages = "155--158",

booktitle = "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008",

publisher = "IEEE",

address = "United States",

note = "26th International Conference on Microelectronics, MIEL 2008, MIEL 2008 ; Conference date: 11-05-2008 Through 14-05-2008",

}

TY - GEN

T1 - Analytical carrier transport model for arbitrarily shallow p-n junctions

AU - Popadić, Miloš

AU - Lorito, Gianpaolo

AU - Nanver, Lis K.

PY - 2008/9/19

Y1 - 2008/9/19

N2 - This paper presents for the first time an analytical model of arbitrarily shallow p-n junctions. Depending on the junction depth, electrical characteristics of ultra-shallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. Therefore, this model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultra-shallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

AB - This paper presents for the first time an analytical model of arbitrarily shallow p-n junctions. Depending on the junction depth, electrical characteristics of ultra-shallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. Therefore, this model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultra-shallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

U2 - 10.1109/ICMEL.2008.4559246

DO - 10.1109/ICMEL.2008.4559246

M3 - Conference contribution

AN - SCOPUS:51749120567

SN - 978-1-4244-1882-4

SP - 155

EP - 158

BT - 2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008

PB - IEEE

T2 - 26th International Conference on Microelectronics, MIEL 2008

Y2 - 11 May 2008 through 14 May 2008

ER -

Analytical carrier transport model for arbitrarily shallow p-n junctions

Abstract

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