Analytical carrier transport model for arbitrarily shallow p-n junctions

Miloš Popadić*, Gianpaolo Lorito, Lis K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper presents for the first time an analytical model of arbitrarily shallow p-n junctions. Depending on the junction depth, electrical characteristics of ultra-shallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. Therefore, this model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultra-shallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

Original languageEnglish
Title of host publication2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008
PublisherIEEE
Pages155-158
Number of pages4
ISBN (Print)978-1-4244-1882-4
DOIs
Publication statusPublished - 19 Sep 2008
Externally publishedYes
Event26th International Conference on Microelectronics, MIEL 2008 - Nis, Serbia
Duration: 11 May 200814 May 2008

Conference

Conference26th International Conference on Microelectronics, MIEL 2008
Abbreviated titleMIEL 2008
CountrySerbia
CityNis
Period11/05/0814/05/08

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