Analytical formulation and electrical measurements of self-heating in silicon BJT's

N. Nenadović; V. D'Alessandro; L. K. Nanver; N. Rinaldi; H. Schellevis; J. W. Slotboom

doi:10.1109/BIPOL.2002.1042879

Analytical formulation and electrical measurements of self-heating in silicon BJT's

N. Nenadović^*, V. D'Alessandro, L. K. Nanver, N. Rinaldi, H. Schellevis, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

12 Citations (Scopus)

Abstract

A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.

Original language	English
Title of host publication	Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
Pages	24-27
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2002.1042879
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	2002 IEEE Bipolar/BicMOS and Technology Meeting - Minneapolis, United States Duration: 29 Sep 2002 → 1 Oct 2002

Conference

Conference	2002 IEEE Bipolar/BicMOS and Technology Meeting
Country	United States
City	Minneapolis
Period	29/09/02 → 1/10/02

Access to Document

10.1109/BIPOL.2002.1042879

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Nenadović, N., D'Alessandro, V., Nanver, L. K., Rinaldi, N., Schellevis, H., & Slotboom, J. W. (2002). Analytical formulation and electrical measurements of self-heating in silicon BJT's. In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (pp. 24-27) https://doi.org/10.1109/BIPOL.2002.1042879

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title = "Analytical formulation and electrical measurements of self-heating in silicon BJT's",

abstract = "A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.",

author = "N. Nenadović and V. D'Alessandro and Nanver, {L. K.} and N. Rinaldi and H. Schellevis and Slotboom, {J. W.}",

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Nenadović, N, D'Alessandro, V, Nanver, LK, Rinaldi, N, Schellevis, H & Slotboom, JW 2002, Analytical formulation and electrical measurements of self-heating in silicon BJT's. in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. pp. 24-27, 2002 IEEE Bipolar/BicMOS and Technology Meeting, Minneapolis, United States, 29/09/02. https://doi.org/10.1109/BIPOL.2002.1042879

Analytical formulation and electrical measurements of self-heating in silicon BJT's. / Nenadović, N.; D'Alessandro, V.; Nanver, L. K.; Rinaldi, N.; Schellevis, H.; Slotboom, J. W.

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. 2002. p. 24-27.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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