A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.
|Title of host publication||Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting|
|Number of pages||4|
|Publication status||Published - 1 Jan 2002|
|Event||2002 IEEE Bipolar/BicMOS and Technology Meeting - Minneapolis, United States|
Duration: 29 Sep 2002 → 1 Oct 2002
|Conference||2002 IEEE Bipolar/BicMOS and Technology Meeting|
|Period||29/09/02 → 1/10/02|