Abstract
A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting |
| Pages | 24-27 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 1 Jan 2002 |
| Externally published | Yes |
| Event | 2002 IEEE Bipolar/BicMOS and Technology Meeting - Minneapolis, United States Duration: 29 Sep 2002 → 1 Oct 2002 |
Conference
| Conference | 2002 IEEE Bipolar/BicMOS and Technology Meeting |
|---|---|
| Country | United States |
| City | Minneapolis |
| Period | 29/09/02 → 1/10/02 |
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Analytical formulation and electrical measurements of self-heating in silicon BJT's. / Nenadović, N.; D'Alessandro, V.; Nanver, L. K.; Rinaldi, N.; Schellevis, H.; Slotboom, J. W.
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. 2002. p. 24-27.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Analytical formulation and electrical measurements of self-heating in silicon BJT's
AU - Nenadović, N.
AU - D'Alessandro, V.
AU - Nanver, L. K.
AU - Rinaldi, N.
AU - Schellevis, H.
AU - Slotboom, J. W.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.
AB - A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.
UR - http://www.scopus.com/inward/record.url?scp=0036437790&partnerID=8YFLogxK
U2 - 10.1109/BIPOL.2002.1042879
DO - 10.1109/BIPOL.2002.1042879
M3 - Conference contribution
SN - 0-7803-7561-0
SP - 24
EP - 27
BT - Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
ER -