Analytical formulation and electrical measurements of self-heating in silicon BJT's

N. Nenadović; V. D'Alessandro; L.K. Nanver; N. Rinaldi; H. Schellevis; J.W. Slotboom

doi:10.1109/BIPOL.2002.1042879

Analytical formulation and electrical measurements of self-heating in silicon BJT's

N. Nenadović^*, V. D'Alessandro, L.K. Nanver, N. Rinaldi, H. Schellevis, J.W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

12 Citations (Scopus)

Abstract

A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.

Original language	English
Title of host publication	Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
Pages	24-27
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2002.1042879
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	2002 IEEE Bipolar/BicMOS and Technology Meeting - Minneapolis, United States Duration: 29 Sep 2002 → 1 Oct 2002

Conference

Conference	2002 IEEE Bipolar/BicMOS and Technology Meeting
Country	United States
City	Minneapolis
Period	29/09/02 → 1/10/02

Access to Document

10.1109/BIPOL.2002.1042879

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Analytical formulation and electrical measurements of self-heating in silicon BJT's'. Together they form a unique fingerprint.

Cite this

@inproceedings{f8f8b50ab5384d00a82d3a722abaead7,

title = "Analytical formulation and electrical measurements of self-heating in silicon BJT's",

abstract = "A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.",

author = "N. Nenadovi{\'c} and V. D'Alessandro and L.K. Nanver and N. Rinaldi and H. Schellevis and J.W. Slotboom",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/BIPOL.2002.1042879",

language = "English",

isbn = "0-7803-7561-0",

pages = "24--27",

booktitle = "Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting",

note = "2002 IEEE Bipolar/BicMOS and Technology Meeting ; Conference date: 29-09-2002 Through 01-10-2002",

}

Nenadović, N, D'Alessandro, V, Nanver, LK, Rinaldi, N, Schellevis, H & Slotboom, JW 2002, Analytical formulation and electrical measurements of self-heating in silicon BJT's. in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. pp. 24-27, 2002 IEEE Bipolar/BicMOS and Technology Meeting, Minneapolis, United States, 29/09/02. https://doi.org/10.1109/BIPOL.2002.1042879

Analytical formulation and electrical measurements of self-heating in silicon BJT's. / Nenadović, N.; D'Alessandro, V.; Nanver, L.K.; Rinaldi, N.; Schellevis, H.; Slotboom, J.W.

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. 2002. p. 24-27.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Analytical formulation and electrical measurements of self-heating in silicon BJT's

AU - Nenadović, N.

AU - D'Alessandro, V.

AU - Nanver, L.K.

AU - Rinaldi, N.

AU - Schellevis, H.

AU - Slotboom, J.W.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.

AB - A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.

UR - http://www.scopus.com/inward/record.url?scp=0036437790&partnerID=8YFLogxK

U2 - 10.1109/BIPOL.2002.1042879

DO - 10.1109/BIPOL.2002.1042879

M3 - Conference contribution

AN - SCOPUS:0036437790

SN - 0-7803-7561-0

SP - 24

EP - 27

BT - Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting

T2 - 2002 IEEE Bipolar/BicMOS and Technology Meeting

Y2 - 29 September 2002 through 1 October 2002

ER -