Analytical formulation and electrical measurements of self-heating in silicon BJT's

N. Nenadović*, V. D'Alessandro, L. K. Nanver, N. Rinaldi, H. Schellevis, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

Abstract

A complete analytical formulation of thermal runaway in silicon bipolar transistors was developed. An accurate expression for the temperature increase above ambient at the onset of thermal runaway was derived and verified. It was demonstrated that such an expression can be also useful to accurately evaluate the thermal resistance. The analytical formulation was validated by electrical measurements and simulations of silicon-on-glass BJT's with high thermal resistance.

Original languageEnglish
Title of host publicationProceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
Pages24-27
Number of pages4
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event2002 IEEE Bipolar/BicMOS and Technology Meeting - Minneapolis, United States
Duration: 29 Sep 20021 Oct 2002

Conference

Conference2002 IEEE Bipolar/BicMOS and Technology Meeting
CountryUnited States
CityMinneapolis
Period29/09/021/10/02

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  • Cite this

    Nenadović, N., D'Alessandro, V., Nanver, L. K., Rinaldi, N., Schellevis, H., & Slotboom, J. W. (2002). Analytical formulation and electrical measurements of self-heating in silicon BJT's. In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (pp. 24-27) https://doi.org/10.1109/BIPOL.2002.1042879