Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

Miloš Popadiç, Gianpaolo Lorito, Lis K. Nanver

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

Abstract

For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

Original languageEnglish
Pages (from-to)116-125
Number of pages10
JournalIEEE transactions on electron devices
Volume56
Issue number1
DOIs
Publication statusPublished - 19 Dec 2008
Externally publishedYes

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Analytical models
Diodes
Doping (additives)

Keywords

  • Schottky barriers
  • Schottky diodes
  • Semiconductor device modeling
  • Semiconductor diodes
  • Semiconductor junctions

Cite this

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title = "Analytical model of I-V characteristics of arbitrarily shallow p-n junctions",
abstract = "For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.",
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Analytical model of I-V characteristics of arbitrarily shallow p-n junctions. / Popadiç, Miloš; Lorito, Gianpaolo; Nanver, Lis K.

In: IEEE transactions on electron devices, Vol. 56, No. 1, 19.12.2008, p. 116-125.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

AU - Popadiç, Miloš

AU - Lorito, Gianpaolo

AU - Nanver, Lis K.

PY - 2008/12/19

Y1 - 2008/12/19

N2 - For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

AB - For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

KW - Schottky barriers

KW - Schottky diodes

KW - Semiconductor device modeling

KW - Semiconductor diodes

KW - Semiconductor junctions

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