Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

Miloš Popadiç*, Gianpaolo Lorito, Lis K. Nanver

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)

Abstract

For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

Original languageEnglish
Pages (from-to)116-125
Number of pages10
JournalIEEE transactions on electron devices
Volume56
Issue number1
DOIs
Publication statusPublished - 19 Dec 2008
Externally publishedYes

Keywords

  • Schottky barriers
  • Schottky diodes
  • Semiconductor device modeling
  • Semiconductor diodes
  • Semiconductor junctions

Fingerprint Dive into the research topics of 'Analytical model of I-V characteristics of arbitrarily shallow p-n junctions'. Together they form a unique fingerprint.

Cite this