Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

Miloš Popadiç; Gianpaolo Lorito; Lis K. Nanver

doi:10.1109/TED.2008.2009028

Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

Miloš Popadiç^*, Gianpaolo Lorito, Lis K. Nanver

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

15 Citations (Scopus)

Abstract

For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n⁺-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

Original language	English
Pages (from-to)	116-125
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	1
DOIs	https://doi.org/10.1109/TED.2008.2009028
Publication status	Published - 19 Dec 2008
Externally published	Yes

Keywords

Schottky barriers
Schottky diodes
Semiconductor device modeling
Semiconductor diodes
Semiconductor junctions

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10.1109/TED.2008.2009028

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title = "Analytical model of I-V characteristics of arbitrarily shallow p-n junctions",

abstract = "For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.",

keywords = "Schottky barriers, Schottky diodes, Semiconductor device modeling, Semiconductor diodes, Semiconductor junctions",

author = "Milo{\v s} Popadi{\c c} and Gianpaolo Lorito and Nanver, {Lis K.}",

year = "2008",

month = dec,

day = "19",

doi = "10.1109/TED.2008.2009028",

language = "English",

volume = "56",

pages = "116--125",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "1",

}

TY - JOUR

T1 - Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

AU - Popadiç, Miloš

AU - Lorito, Gianpaolo

AU - Nanver, Lis K.

PY - 2008/12/19

Y1 - 2008/12/19

N2 - For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

AB - For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow doping region can be totally depleted, electrical characteristics phenomenologically substantially different from typical diode characteristics are predicted. These predictions and the accuracy of the presented model are evaluated by comparison with the MEDICI simulations. Furthermore, ultrashallow n+-p diodes were fabricated, and the anomalous behavior in the crossover regime was experimentally observed.

KW - Schottky barriers

KW - Schottky diodes

KW - Semiconductor device modeling

KW - Semiconductor diodes

KW - Semiconductor junctions

U2 - 10.1109/TED.2008.2009028

DO - 10.1109/TED.2008.2009028

M3 - Article

AN - SCOPUS:70349162039

VL - 56

SP - 116

EP - 125

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

ER -

Analytical model of I-V characteristics of arbitrarily shallow p-n junctions

Abstract

Keywords

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