Angular and spectral bandwidth of Extreme UV multilayers near spacer material absorption edges

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Abstract

High resolution imaging systems for EUV range are based on multilayer optics. Current generation of EUV lithography uses broadband Sn LPP sources, which requires broadband mirrors to fully utilize the source power. On the other hand, there always remains a possibility to use FEL or synchrotron as EUV source. FEL can produce very bright narrowband EUV light of a tunable wavelength, and the spectral bandwidth of the mirror is no longer a restriction. In this paper we look at the consequences of switching to different wavelengths if FEL source is used. For instance, it is known that the reflectance of Mo/Si multilayers increases when approaching Si L-edge, and the spectral bandwidth drops. But the behavior of an angular bandwidth (and its relation with the spectral bandwidth) is usually left out. It is also sometimes assumed that these bandwidths are correlated. For a large aperture EUV optical system with diffraction-limited resolution angular acceptance of a mirror is also a very important parameter. We show that the angular bandwidth of several multilayer systems (Mo/Si, Mo/Be, Ru/Si, Ru/B, La/B) actually increases close to spacer absorption edges, opposite to what occurs with the spectral bandwidth. We study this effect and show that it is caused by an interplay of changing optical constants of respective materials used in these multilayer combinations. We also provide an experimental check of the angular bandwidth of Mo/Si multilayers at 13.5 and 12.6 nm, which confirms our calculations.
Original languageEnglish
Pages (from-to)602-608
Number of pages7
JournalJournal of nanoscience and nanotechnology
Volume19
Issue number1
DOIs
Publication statusPublished - 1 Jan 2019

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material absorption
Electric Power Supplies
Optical Devices
Synchrotrons
spacers
Multilayers
bandwidth
Bandwidth
Light
Free electron lasers
mirrors
Mirrors
broadband
Extreme ultraviolet lithography
Wavelength
Optical constants
angular resolution
wavelengths
Optical systems
acceptability

Keywords

  • Multilayer, EUV Photolithography,
  • Free Electron Laser

Cite this

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title = "Angular and spectral bandwidth of Extreme UV multilayers near spacer material absorption edges",
abstract = "High resolution imaging systems for EUV range are based on multilayer optics. Current generation of EUV lithography uses broadband Sn LPP sources, which requires broadband mirrors to fully utilize the source power. On the other hand, there always remains a possibility to use FEL or synchrotron as EUV source. FEL can produce very bright narrowband EUV light of a tunable wavelength, and the spectral bandwidth of the mirror is no longer a restriction. In this paper we look at the consequences of switching to different wavelengths if FEL source is used. For instance, it is known that the reflectance of Mo/Si multilayers increases when approaching Si L-edge, and the spectral bandwidth drops. But the behavior of an angular bandwidth (and its relation with the spectral bandwidth) is usually left out. It is also sometimes assumed that these bandwidths are correlated. For a large aperture EUV optical system with diffraction-limited resolution angular acceptance of a mirror is also a very important parameter. We show that the angular bandwidth of several multilayer systems (Mo/Si, Mo/Be, Ru/Si, Ru/B, La/B) actually increases close to spacer absorption edges, opposite to what occurs with the spectral bandwidth. We study this effect and show that it is caused by an interplay of changing optical constants of respective materials used in these multilayer combinations. We also provide an experimental check of the angular bandwidth of Mo/Si multilayers at 13.5 and 12.6 nm, which confirms our calculations.",
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AU - Zameshin, Andrey

AU - Yakshin, Andrey

AU - Chandrasekaran, Anirudhan

AU - Bijkerk, Fred

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